STMicroelectronics

The STD15N65M5 is an N-channel MOSFET from STMicroelectronics rated at 650V breakdown voltage and 11A continuous drain current in a DPAK (TO-252) package. It features a low on-resistance of 0.34 Ohm and 160mJ avalanche energy rating for rugged power switching. Available from stock worldwide with competitive pricing and fast shipping.

STMicroelectronics STD14NM50N is an N-channel MOSFET rated at 12A drain current and 500V breakdown voltage with 0.32Ω on-resistance. Built-in diode and drain-connected TO-252 package simplify high-voltage switching designs. Available from stock with worldwide shipping.

STMicroelectronics STD16NF06LT4 is a logic-level N-channel MOSFET with 60V breakdown voltage and 24A drain current in a DPAK-3 package. Features 85mΩ on-resistance, 200mJ avalanche energy rating, and built-in body diode. Available from stock with worldwide shipping.

STMicroelectronics STD11NM60ND is an N-channel 600V FDmesh II Power MOSFET with 10A drain current, 370 mOhm typical on-resistance, and integrated body diode in a DPAK package. Available from stock with worldwide shipping.

STMicroelectronics SM6T39CAY, Bi-Directional TVS Diode, 600W, 2-Pin DO-214AA

STD150N3LLH6 is a low-voltage N-Channel MOSFET from STMicroelectronics in RoHS-compliant DPAK-3 package. Key specs include 30V breakdown voltage, 80A drain current, and ultra-low 0.0045Ω on-resistance with 525mJ avalanche energy. Available from stock with worldwide shipping.

STD10NF10T4 is an N-Channel Power MOSFET in DPAK-3 (TO-252) package with 100V breakdown voltage and 13A drain current capability. Features ultra-low 0.13Ω on-resistance with built-in freewheeling diode and 70mJ avalanche energy rating. From $0.70 in stock with worldwide shipping.

STMicroelectronics STD13NM60ND is an N-channel FDmesh II Power MOSFET rated at 11A drain current and 600V breakdown voltage with 0.38Ω on-resistance. Features 162mJ avalanche energy rating and built-in diode in a DPAK package. Available from stock with worldwide shipping.

The STD13N60M2 is an N-Channel power MOSFET from STMicroelectronics rated at 600 V breakdown voltage and 11 A maximum drain current. It features a 380 mΩ on-resistance and 125 mJ avalanche energy rating in a compact DPAK-3 (TO-252) package. Available with worldwide shipping and competitive pricing.

The STMicroelectronics STB8N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 7A drain current and ultra-low 560 mΩ typical on-resistance. It features a built-in diode and 120 mJ avalanche energy rating in a TO-263AB (D2PAK) package. Available from stock with worldwide shipping.

STB85NF55T4 is a high-current N-channel power MOSFET by STMicroelectronics rated at 55 V and 80 A with an ultra-low 8 mΩ on-resistance. Key specs: 980 mJ avalanche energy rating, drain-connected case in TO-263AB package. From competitive pricing, in stock with worldwide shipping.

STMicroelectronics STB45N65M5 is an N-channel 650V MDmesh M5 Power MOSFET rated at 35A with ultra-low 78 mOhm maximum on-resistance and 810 mJ avalanche energy. It is available in D2PAK, TO-220FP, and TO-220 packages for high-power switching applications with worldwide shipping.

STC3100IST is a single-channel battery monitor and gas gauge IC from STMicroelectronics in an 8-pin MSOP package. It integrates voltage, temperature, and coulomb-counter measurement for accurate state-of-charge tracking. Available from authorized distributors with competitive pricing and worldwide shipping.

The STMicroelectronics STD10N60M2 is a single N-channel MDmesh M2 power MOSFET rated at 600V and 7.5A with a typical 0.55Ω on-resistance and 110mJ avalanche energy rating, available in D2PAK, DPAK, and TO-220 packages. It integrates a built-in body diode and features an ultra-low 0.84pF feedback capacitance for high-efficiency switching in power conversion designs. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.

STC3100IQT is a single-channel battery gas gauge IC by STMicroelectronics designed for Li-ion and Li-polymer battery monitoring in portable devices. Key specs: integrated current, voltage, and temperature sensing with I2C interface in a compact 3x3 mm DFN-8 package at 0.5 mm pitch. RoHS compliant, in stock with competitive pricing and worldwide shipping.

STB23NM60ND is a 600V N-channel Power MOSFET with 19.5A drain current and 180 mOhm maximum on-resistance by STMicroelectronics. Key specs: 700 mJ avalanche energy, single configuration with built-in diode, TO-263AB package. From $1.50, in stock with worldwide shipping.

STMicroelectronics STB6N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 4.5A with a typical on-resistance of 1.06 ohms and 86mJ avalanche energy rating. MDmesh M2 superjunction technology delivers reduced gate charge and switching losses for efficient high-voltage power conversion. Available in D2PAK package, in stock with worldwide shipping.

2STF2360, Bipolar Transistor, PNP -3 A -60 V HFE:80 130 MHz Power Transistor, 3-Pin SOT-89

The STB34NM60N is an N-Channel 600V MDmesh II Power MOSFET from STMicroelectronics with a 31.5A continuous drain current and 92mΩ typical RDS(on), featuring a built-in diode and 345mJ avalanche energy rating. It is available in D²PAK (TO-263AB) and TO-220 packages for high-efficiency power switching. Available in stock worldwide with competitive pricing for industrial and power conversion applications.

The STMicroelectronics STB18N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 13A with 255 mΩ typical on-resistance. It features 135 mJ avalanche energy rating and integrated body diode. Available in D²PAK package, in stock worldwide with competitive pricing.

STMicroelectronics ST72F264G2M6 is an 8-bit ST7 microcontroller with up to 16 MHz clock, 8 KB Flash memory, integrated ADC, and boundary scan support. Operates down to 2.7 V supply in a 28-pin SOIC package for industrial and consumer applications. Available in stock with worldwide shipping.

The STMicroelectronics STB16N65M5 is a 650V N-channel power MOSFET with ultra-low 0.279Ω on-resistance and 12A drain current in a D2PAK-3 package. It integrates a built-in body diode and 200mJ avalanche energy rating. Available from stock with worldwide shipping.

STB57N65M5 is an N-Channel power MOSFET rated at 650V and 42A with an ultra-low 0.063Ω on-resistance in a D2PAK (TO-263) surface-mount package. Features 960mJ avalanche energy rating and built-in diode for robust inductive switching performance. Available from STMicroelectronics with worldwide shipping.

STMicroelectronics STM32F405VGT6W is a high-performance 32-bit ARM Cortex-M4 microcontroller running at up to 168MHz with 1MB Flash, 192KB SRAM, and rich peripherals including USB OTG, CAN, and 12-bit ADC/DAC. Offers FPU for DSP and floating-point operations. Available in LQFP-100 package from stock with worldwide shipping.

The STB45NF06T4 is a high-current N-channel STripFET Power MOSFET from STMicroelectronics with 60V breakdown voltage, 38A continuous drain current, and an exceptionally low 0.028-ohm maximum on-resistance in a 3-pin D2PAK package. It integrates a built-in body diode for simplified synchronous rectification and half-bridge topologies. Available from STMicroelectronics authorized distributors with in-stock inventory and worldwide shipping for power electronics designs.

The STB38N65M5 is a high-voltage N-channel Power MOSFET from STMicroelectronics rated at 650V and 30A with a maximum RDS(on) of 95mΩ. Built with MDmesh M5 technology, it delivers excellent switching performance and a 660mJ avalanche energy rating for robust reliability. Available in a TO-220AB package with worldwide shipping from authorized global distributors.

STB36NM60ND is a 600V N-channel power MOSFET by STMicroelectronics with a maximum drain current of 29A and power dissipation of 190W in a D2PAK surface-mount package. Key specs: 600V VDSS, 29A ID max, 190W Pd max. In stock from authorized distributors with worldwide shipping.

STB34N65M5 is a high-voltage N-Channel MOSFET from STMicroelectronics in TO-263 package. Key specs include 650V breakdown voltage, 28A drain current, and ultra-low 0.11Ω on-resistance with 510mJ avalanche energy. Available from stock with worldwide shipping.

STB18NM80 is an N-channel 800 V power MOSFET by STMicroelectronics with 17 A drain current and 295 mΩ maximum on-resistance in a TO-263AB D2PAK surface-mount package. Key specs: 600 mJ avalanche energy rating and built-in body diode for robust high-voltage switching. RoHS compliant, in stock with competitive pricing and worldwide shipping.

STMicroelectronics STB26NM60N is an N-Channel power MOSFET with 600V breakdown voltage and 20A maximum drain current with 0.165Ω on-resistance. Features a built-in diode and 610mJ avalanche energy rating for robust switching performance. Available in TO-263 (D2PAK) package with worldwide shipping.

The STB16NF06LT4 is a STripFET Power MOSFET from STMicroelectronics featuring an N-channel design with 60V breakdown voltage, 16A continuous drain current, and ultra-low 0.07-ohm typical on-resistance. Housed in the D2PAK (TO-263AB) surface-mount package, it delivers high efficiency in motor drive and power conversion circuits. Available through authorized distributors with in-stock inventory and worldwide shipping.

STMicroelectronics STB31N65M5 is an N-channel MDmesh M5 Power MOSFET rated at 650V and 22A with a maximum power dissipation of 150W. It features advanced MDmesh M5 superjunction technology for excellent switching performance and high efficiency in power conversion. Available in D2PAK surface-mount package, in stock with worldwide shipping.

STMicroelectronics STB25N80K5 is a high-voltage N-channel power MOSFET rated at 800V and 19.5A with 260mΩ Rds(on) and 200mJ avalanche energy capability. Built with ST's K5 superjunction technology for high-efficiency switching in offline power supplies and PFC circuits. Available in D2PAK (TO-263) package from stock with worldwide shipping.

The STMicroelectronics STB18N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 15A continuous drain current and ultra-low 220 mΩ maximum on-resistance. It features a built-in diode and 210 mJ avalanche energy rating in a D2PAK (TO-263AB) surface-mount package. Available from stock with worldwide shipping.

The STB10N60M2 is a high-voltage N-channel Power MOSFET from STMicroelectronics with 600V breakdown voltage, 7.5A continuous drain current, and 0.6-ohm maximum on-resistance in a D2PAK-3 surface-mount package. It features an ultra-low 0.84pF maximum feedback capacitance for excellent switching performance in offline power conversion circuits. Available from authorized distributors with in-stock inventory and worldwide shipping for power supply designs.

The STB28NM50N is an STMicroelectronics N-Channel 500V Power MOSFET with 21A drain current, 0.158Ω maximum RDS(on), and integrated body diode in a TO-263AB surface-mount package. It features 430mJ avalanche energy rating for rugged operation in unclamped inductive switching circuits. Available from authorized distributors with worldwide shipping.

N‑channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a D²PAK, I²PAK, TO-220 and TO-247 packages

The STB13N80K5 is an N-channel power MOSFET from STMicroelectronics rated at 800V breakdown voltage and 12A drain current with a maximum on-resistance of 0.45 ohm and 148 mJ avalanche energy rating. It integrates a built-in body diode for robust switching in high-voltage power conversion circuits. Available in TO-263 (D2PAK) surface-mount package with worldwide shipping.

High junction temperature Transil

The STMicroelectronics ST7FLITE19F1B6 is an 8-bit ST72-family microcontroller operating at up to 16MHz with integrated ADC, Flash program memory, and a 20-pin DIP package for easy prototyping and through-hole assembly. It offers RoHS-compliant lead-free construction suitable for industrial and consumer applications. Available in stock worldwide with competitive pricing and fast shipping.

N-Channel MOSFET, 13 A, 550 V, 3-Pin D2PAK STMicroelectronics STB18N55M5

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK - STripFET™ Power MOSFET

600 W, 188 V TVS in DO-15

STMicroelectronics VN750-E is a high-side N-channel power switch driving up to 6 A continuous from a 5.5 V to 36 V supply with built-in overcurrent, overvoltage, and thermal protections. Features 60 mΩ on-resistance and -40°C to 150°C operating range in a 5-pin PENTAWATT through-hole package. Available from stock with worldwide shipping.

TVS Transil diode,ESD suppressor SOT666 STMicroelectronics ESDALCL6-4P6A, Uni-Directional TVS Diode Array, 90W, 6-Pin SOT-666

STMicroelectronics, 16bit ST10 Microcontroller, 25MHz ROMLess, 144-Pin PQFP

VN5050AJ-E, MOSFET Power Driver 18A, Non-Inverting, 4.5 → 36 V, 12-Pin PowerSSO

D2PAK-3