Transistor IGBT

Transistor IGBT components are essential building blocks in modern electronic systems. FindMyChip sources Transistor IGBT ICs from authorized China distributors with competitive pricing and reliable stock.

229 components

How to Choose Transistor IGBT Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All Transistor IGBT Components

Showing 150 of 229

AFGHL40T120RWDonsemi

AEC Q101 qualified; Tight Parameter distribution; Low Vcesat; Low Eoff & Eon

IRGP4066DPBFInternational Rectifier

Use the download button to access the IRGP4066DPBF schematic symbol, PCB footprint, and 3D model.

IRGP4062DPBFInternational Rectifier

Use the download button to access the IRGP4062DPBF schematic symbol, PCB footprint, and 3D model.

IRGB4062DPBFInternational Rectifier

Use the download button to access the IRGB4062DPBF schematic symbol, PCB footprint, and 3D model.

IRG4PC50UD-EPBFInternational Rectifier

Use the download button to access the IRG4PC50UD-EPBF schematic symbol, PCB footprint, and 3D model.

NGTB30N120LWGON Semiconductor

Obsolete - IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

IRG7PH42UPBFInfineon

Use the download button to access the IRG7PH42UPBF schematic symbol, PCB footprint, and 3D model.

FGI3040G2_F085ON Semiconductor

EcoSPARK2 400V 25A Ignition IGBT I2PAK Fairchild FGI3040G2_F085, Automotive Ignition IGBT, 41 A 400 V, 3-Pin I2PAK

FGP3440G2_F085ON Semiconductor

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IRGB20B60PD1PBFInfineon

Use the download button to access the IRGB20B60PD1PBF schematic symbol, PCB footprint, and 3D model.

IKW50N60TInfineon

Use the download button to access the IKW50N60T schematic symbol, PCB footprint, and 3D model.

RJH60F0DPQ-A0#T0Renesas Electronics

RJH60F0DPQ-A0#T0 from Renesas Electronics is a Transistor Igbt for industrial controls, embedded electronics, maintenance sourcing, and production assemblies. Key specifications include -247A, 3 pins, TO-247A package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The TO-247A format supports standard assembly and sourcing workflows.

IKW30N65ES5Infineon

Use the download button to access the IKW30N65ES5 schematic symbol, PCB footprint, and 3D model.

IKW75N65ES5Infineon

Use the download button to access the IKW75N65ES5 schematic symbol, PCB footprint, and 3D model.

IRGS14C40LPBFInternational Rectifier

LEAD FREE, PLASTIC PACKAGE-3

IXBH12N300IXYS SEMICONDUCTOR

IXYS IXBH12N300 is a single IGBT with a built-in anti-parallel diode rated at 3000 V collector-emitter and 30 A collector current, housed in a TO-247AD vertical through-hole package. Available from stock with worldwide shipping.

NGTB15N60S1EGON Semiconductor

IGBT, /w Diode 600V 15A NPT

LM317BD2TGON Semiconductor

Internal Thermal Overload Protection; Eliminates Stocking many Fixed Voltages Standard Application; Internal Short Circuit Current Limiting Constant with Temperature; Output Transistor Safe-Area Compensation; Floating Operation for High Voltage Applications; Output Adjustable between 1.2 V and 37 V; Output Current in Excess of 1.5 A; Automotive Device for Wide Temperature Range - NCV317 ; Pb-Free Packages are Available

RGW80TS65DGC11ROHM Semiconductor

ROHM RGW80TS65DGC11 is a 650 V, 78 A single IGBT with built-in freewheeling diode in a TO-247N 3-pin package. Designed for high-efficiency power conversion with low switching losses. Available from stock with worldwide shipping.

ISL9V5036P3-F085ON Semiconductor

ISL9V5036P3-F085 is a single N-channel IGBT from ON Semiconductor featuring a 360 V collector-emitter voltage and 46 A maximum collector current. Packaged in a TO-3P vertical outline with integrated diode and resistor, it delivers fast switching for power conversion. Available with worldwide shipping from authorized distributors.

IHW40N135R5XKSA1Infineon

IHW40N135R5XKSA1 is a Infineon capacitor for power filtering, decoupling, timing, and energy-storage sections of electronic assemblies. Key details include 3 pins, Transistor Outline, Vertical, and -40°C to 175°C. Available through FindMyChip sourcing with worldwide shipping support.

STGWA80H65FBAGSTMicroelectronics

STMicroelectronics STGWA80H65FBAG is an AEC-Q101 automotive-grade 650 V 80 A trench gate field-stop IGBT in TO-247 long-leads package, designed for high-speed half-bridge motor drives and on-board chargers in electric vehicles.

GWA40MS120DF4AGSTMicroelectronics

• AEC-Q101 qualified • 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C • VCE(sat) = 1.95 V (typ.) @ IC = 40 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance

STG40H65FBD7STMicroelectronics

The STMicroelectronics STG40H65FBD7 is a 650V 40A N-channel trench-gate field-stop IGBT with co-packaged ultrafast soft-recovery diode in a TO-247 vertical package. Available from stock worldwide with competitive pricing.

STGWA80H65DFBAGSTMicroelectronics

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads package

STGW10M65DF2STMicroelectronics

Use the download button to access the STGW10M65DF2 schematic symbol, PCB footprint, and 3D model.

STGIF5CH60S-XSTMicroelectronics

STMicroelectronics STGIF5CH60S-X is a SLLIMM 2nd series 3-phase IPM inverter module with 8 A output, 600 V blocking voltage, and short-circuit rugged IGBTs for AC motor control. From $4.50 in stock worldwide shipping.

STGIF7CH60S-XSTMicroelectronics

STMicroelectronics STGIF7CH60S-X is a SLLIMM 2nd series IPM with 3-phase IGBT inverter, 10 A continuous output, 600 V rating, and short-circuit rugged design for motor drives. From $8.50 in stock worldwide shipping.

STGIF5CH60TS-XZSTMicroelectronics

SLLIMM 2nd series IPM, 3-phase inverter, 8 A, 600 V short-circuit rugged IGBTs

STGIB8CH60TS-XZSTMicroelectronics

SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs

STGIF10CH60TS-LZSTMicroelectronics

SLLIMM 2nd series IPM, 3-phase inverter, 15 A, 600 V short-circuit rugged IGBTs

STGIF7CH60TS-XZSTMicroelectronics

SLLIMM 2nd-series intelligent power module for 3-phase AC motor inverter drives, rated 10 A and 600 V with short-circuit-rugged IGBTs. Integrates gate drive, bootstrap, and protection circuits in a compact surface-mount package. Available from STMicroelectronics with worldwide shipping.

STGIF7CH60TS-LZSTMicroelectronics

SLLIMM 2nd series IPM, 3-phase inverter, 10 A, 600 V short-circuit rugged IGBTs

STGIB8CH60TS-LZSTMicroelectronics

SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs

STGIPQ4C60T-HLSTMicroelectronics

SLLIMM nano 2nd series IPM, 3-phase inverter, 6 A, 600 V short‑circuit rugged IGBT

STGIF10CH60S-LSTMicroelectronics

SLLIMM - 2nd series IPM, 3-phase inverter, 15 A, 600 V, short‑circuit rugged IGBT

STGIB8CH60S-LZSTMicroelectronics

SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs

STGPL6NC60DISTMicroelectronics

6 A, 600 V hyper fast IGBT with Ultrafast diode

STGB40V60FSTMicroelectronics

Use the download button to access the STGB40V60F schematic symbol and PCB footprint.

STGB30V60DFSTMicroelectronics

STMicroelectronics STGB30V60DF is a 600 V 30 A V-series trench gate field-stop IGBT with a built-in fast anti-parallel diode for very high-speed switching in power inverter and motor drive circuits. Packaged in TO-263AB (D2PAK) with 60 A peak collector current rating and 20 V gate-emitter limit. Available from stock with worldwide shipping.

STGWA40HP65FBSTMicroelectronics

STMicroelectronics STGWA40HP65FB is a 650 V, 40 A trench gate field-stop IGBT in the high-speed HB series with a built-in freewheeling diode. Housed in a TO-247 long-lead package, it delivers 80 A peak collector current and a 20 V gate-emitter voltage rating. Available from stock worldwide with competitive pricing and global shipping.

STGF20H65DFB2STMicroelectronics

Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220FP package

STGFW30V60DFSTMicroelectronics

STMicroelectronics STGFW30V60DF is a trench gate field-stop IGBT rated at 600 V and 30 A with an integrated freewheeling diode. Features a single-element isolated TO-3PF package with 60 A max collector current and 20 V gate-emitter voltage. Available in stock with worldwide shipping.

STGWT30HP65FBSTMicroelectronics

STMicroelectronics STGWT30HP65FB is a 650 V, 30 A trench gate field-stop IGBT in the high-speed HB series with an integrated freewheeling diode. It supports up to 60 A peak collector current in a TO-3P package with a 20 V gate-emitter voltage rating. Available from stock worldwide with fast delivery.

STGWA20H65DFBSTMicroelectronics

STMicroelectronics STGWA20H65DFB is a trench gate field-stop HB series IGBT rated at 650 V collector-emitter voltage and 20 A continuous collector current with integrated anti-parallel diode. Designed for high-speed switching in TO-247 package for power conversion efficiency. Available from authorized distributors with worldwide shipping.

STGWA30H65DFBSTMicroelectronics

Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package

STGH30H65DFB-2AGSTMicroelectronics

STMicroelectronics STGH30H65DFB-2AG is an automotive-grade trench gate field-stop IGBT rated at 650 V and 30 A (60 A pulsed) with 16 ns fall time in an H²PAK-2 package. Integrates a fast built-in diode for high-speed half-bridge switching in EV and industrial motor drives. Available globally with fast delivery.

STGB20H65DFB2STMicroelectronics

STMicroelectronics STGB20H65DFB2 is a 650 V, 20 A trench gate field-stop IGBT in a D²PAK (TO-263AB) package with built-in freewheeling diode, optimized for high-speed switching in the HB2 series. Available in stock with worldwide shipping for power conversion designs.

STGD25N36LZAGSTMicroelectronics

Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ

STGI25N36LZAGSTMicroelectronics

The STGI25N36LZAG is an automotive-grade 360 V internally clamped IGBT with 25 A collector current, built-in TVS diode and gate resistor, 300 mJ ruggedness rating, and a compact ESCIS vertical package for motor drive applications.

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