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SMALL OUTLINE, R-PDSO-G8

SO-8

Low gate charge; 6 A, 30 V; RDS(ON) = 35 mΩ @ VGS = 4.5 V ; RDS(ON) = 28 mΩ @ VGS = 10 V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability

Obsolete - Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F

FDP032N08B_F102 is a MOSFET transistor by ON Semiconductor for OEM repair, prototyping, and production sourcing. Key specs: 3 pins, 211 A, 80 V. From $0.00, in stock with worldwide shipping.

Fast Switching Speed; 100% UIL Tested ; Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A ; Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A ; High Performance Trench Technology for Extremely Low rDS(on); RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package

100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology

Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; MSL1 robust package design ; RoHS Compliant ; Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A ; Next generation enhanced body diode technology, engineered for soft recovery; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A

Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 8.5 A ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 10 A ; RoHS Compliant ; Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm

Reduced RDS(on) ( 110mΩ ( Typ.)@ VGS = 10V, ID = 22A); Improved switching speed with low EMI; 175oC rated junction temperature; Low gate charge Qg results in simple drive requirement ( Typ. 90nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 40pF)

Use the download button to access the FDG316P schematic symbol, PCB footprint, and 3D model.

High performance trench technology for extremely lowRDS(ON) .; Low gate charge (2.1nC typical).; Compact industry standard SC70-6 surface mountpackage.; 2 A, 30 A V; RDS(on) = 0.12 Ω @ VGS = 10 V; RDS(on) = 0.16 Ω @ VGS = 4.5 V

SC-70, 6 PIN

Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A; VF < 500mV @ 1A; VF < 580mV @ 2A; Schottky and MOSFET incorporated into single power surface mount S0-8 package; Electrically independent Schottky and MOSFET pinout for design flexibility; RoHS Compliant; Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A

N-Channel 100 V 15.7A (Tc) 50W (Tc) Surface Mount TO-252AA 1465 pF @ 25 V -55°C ~ 175°C

ON Semiconductor FDD8444_F085 is a MOSFET for electronic assemblies. Key specs include 3 pins and production PCB layout. Request pricing, stock checks, and worldwide shipping support from FindMyChip.

SuperSOT™ -6 package: small footprint (72% smaller thanstandard SO-8; low profile (1mm thick). ; RoHS Compliant ; Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A ; Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A

−3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free

SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick). ; Manufactured using Green packaging materials. ; Max rDS(ON) = 43mΩ at VGS = -4.5V, ID = -4.5A ; Halide free ; Low gate charge (8nC typical). ; Max rDS(ON) = 68mΩ at VGS = -2.5V, ID = -3.8A ; RoHS Compliant ; High performance trench technology for extremely low rDS(on)

Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model) ; VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω VDROP=0.2V @ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω ; High performance PowerTrench™ technology for extremely for superior thermal and electrical capabilities