STD13N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD13N60M2 is an N-Channel power MOSFET from STMicroelectronics rated at 600 V breakdown voltage and 11 A maximum drain current. It features a 380 mΩ on-resistance and 125 mJ avalanche energy rating in a compact DPAK-3 (TO-252) package. Available with worldwide shipping and competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD13N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4636(MOQ 50)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- High 600 V breakdown voltage enabling reliable operation in offline power conversion and high-voltage switching applications
- Built-in freewheeling diode in single configuration simplifying circuit design and reducing external component count
- Compact DPAK-3 (TO-252) surface-mount package enabling high-density PCB layouts with efficient thermal dissipation
- 125 mJ avalanche energy rating providing robustness against inductive switching transients in power supply circuits
Applications
The STD13N60M2 is designed for high-voltage power conversion applications including flyback converters, PFC boost stages, and offline switching power supplies operating up to 600 V. Its DPAK surface-mount package makes it suitable for compact adapter and charger designs requiring efficient thermal management. The device is also used in motor drive circuits, LED driver power stages, and industrial power supply topologies demanding high blocking voltage performance.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 4 |
| Avalanche Energy Rating (Eas) | 125mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 11A |
| Drain-source On Resistance-Max | 0.38Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 44A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STD13N60M2:
Power Field-Effect Transistor, 11A I(D), 600V, 0.365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Frequently Asked Questions
What is the breakdown voltage of the STD13N60M2?
The STD13N60M2 has a minimum drain-source breakdown voltage (VDS) of 600 V, making it well-suited for high-voltage power conversion applications such as flyback converters, PFC stages, and offline switching power supplies.
What is the maximum drain current of the STD13N60M2?
The STD13N60M2 supports a maximum drain current (ID) of 11 A, providing sufficient current handling capacity for medium-power switching converter topologies including flyback and forward converters in the 50–200 W power range.
What package does the STD13N60M2 come in?
The STD13N60M2 is available in a DPAK-3 (TO-252, JEDEC-95 code) surface-mount package with the drain connected to the case, enabling efficient heat dissipation through the PCB copper pour without requiring through-hole mounting.
What is the on-resistance of the STD13N60M2?
The STD13N60M2 has a maximum drain-source on-resistance (RDS(on)) of 380 mΩ (0.38 Ω), which is typical for high-voltage 600 V class MOSFETs and balances switching speed with conduction loss in offline power applications.
Does the STD13N60M2 include a body diode?
Yes, the STD13N60M2 is configured as a single device with a built-in freewheeling diode, eliminating the need for an external diode in inductive load switching applications and simplifying PCB layout in converter designs.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 50+ | $1.2859 | $64.30 |
| 100+ | $0.7861 | $78.61 |
| 500+ | $0.5877 | $293.85 |
| 1000+ | $0.5400 | $540.00 |
| 2500+ | $0.5160 | $1290.00 |
| 5000+ | $0.4636 | $2318.00 |
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