STB85NF55T4 STMicroelectronics MOSFET (N-Channel) (Surface Mount D2PAK (TO-263)) In Stock

STB85NF55T4 is a high-current N-channel power MOSFET by STMicroelectronics rated at 55 V and 80 A with an ultra-low 8 mΩ on-resistance. Key specs: 980 mJ avalanche energy rating, drain-connected case in TO-263AB package. From competitive pricing, in stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB85NF55T4Surface Mount D2PAK (TO-263)
Quick Facts
Manufacturer
STMicroelectronics
Package
Surface Mount D2PAK (TO-263)
Pin Count
4
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.8910(MOQ 10)
Temp Range
?°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low 8 mΩ maximum drain-source on-resistance (RDS(on)) minimizing conduction losses in high-current paths
  • 80 A continuous drain current capability with 55 V breakdown voltage for high-power switching applications
  • Robust 980 mJ avalanche energy rating (EAS) providing exceptional protection against inductive voltage transients
  • TO-263AB (D2PAK) surface-mount package offering compact PCB footprint with excellent thermal performance

Applications

The STB85NF55T4 is designed for high-current DC-DC converters, synchronous rectification, motor drive circuits, and battery management systems operating at voltages up to 55 V. Its ultra-low RDS(on) of 8 mΩ makes it highly effective in automotive power stages, point-of-load converters, and UPS systems where conduction losses must be minimized. The high avalanche energy rating ensures reliable operation in inductive load switching and systems subject to voltage transients.

Specifications

Factory Lead Time13Weeks
YTEOL5.6
Avalanche Energy Rating (Eas)980mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55V
Drain Current-Max (ID)80A
Drain-source On Resistance-Max0.008Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)300W
Pulsed Drain Current-Max (IDM)320A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageSurface Mount D2PAK (TO-263)

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB85NF55T4 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for STB85NF55T4:

STB85NF55LT4STMicroelectronics

Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

View Part →

Frequently Asked Questions

What is the maximum drain current and voltage of the STB85NF55T4?

The STB85NF55T4 supports a maximum continuous drain current (ID) of 80 A and a drain-source breakdown voltage of 55 V minimum. These specifications make it well-suited for high-current, low-voltage power conversion applications such as synchronous buck converters and motor controllers.

What is the RDS(on) of the STB85NF55T4 and how does it benefit power efficiency?

The STB85NF55T4 has an ultra-low maximum RDS(on) of 8 mΩ (0.008 Ω). This extremely low on-resistance significantly reduces conduction power losses (P = I²R), enabling high-efficiency power conversion at elevated currents, which is critical in motor drives, battery chargers, and DC-DC converters.

What package is the STB85NF55T4 available in and what are its thermal benefits?

The STB85NF55T4 is housed in a TO-263AB (D2PAK) surface-mount package with the drain connected to the case. This package provides an excellent thermal path to the PCB, allowing effective heat dissipation through copper pours or heatsinking without through-hole mounting, making it ideal for automated SMT assembly.

What is the avalanche energy rating of the STB85NF55T4 and why is it important?

The STB85NF55T4 has an avalanche energy rating (EAS) of 980 mJ, one of the highest in its class. This robust avalanche capability protects the device during unclamped inductive switching events, such as when driving motors or solenoids, ensuring long-term reliability even under demanding transient conditions.

What are typical applications for the STB85NF55T4?

The STB85NF55T4 is commonly used in automotive power modules, industrial motor drives, synchronous rectification stages, battery management systems (BMS), and high-current DC-DC converters. Its combination of low RDS(on), high current capability, and robust avalanche rating makes it particularly suited to harsh and high-power environments.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.8910
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$2.2270$22.27
100+$1.5447$154.47
125+$1.3500$168.75
400+$1.0125$405.00
1000+$0.8910$891.00
pcs
Unit price: $2.2270 · Total: $22.27

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy