STD13NM60ND STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STD13NM60ND is an N-channel FDmesh II Power MOSFET rated at 11A drain current and 600V breakdown voltage with 0.38Ω on-resistance. Features 162mJ avalanche energy rating and built-in diode in a DPAK package. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD13NM60ND Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.4623(MOQ 5)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V minimum drain-source breakdown voltage with FDmesh II technology for high-efficiency offline and AC/DC power conversion
- High 162mJ avalanche energy rating ensuring rugged operation under transient overvoltage conditions in switch-mode power supplies
- 11A maximum drain current with 0.38Ω on-resistance in a DPAK (TO-252) package with drain-connected case for simplified heatsinking
Applications
The STD13NM60ND is designed for high-voltage power switching in offline switch-mode power supplies, power factor correction stages, and flyback converters operating up to 600V. Its FDmesh II technology delivers low switching losses and high efficiency for AC/DC adapters, LED drivers, and industrial power electronics. The built-in body diode and compact DPAK package enable compact, thermally efficient designs for both consumer and industrial power applications.
Specifications
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 162mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 11A |
| Drain-source On Resistance-Max | 0.38Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 44A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| ## STD13NM60ND Alternates Showing results | Image |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STD13NM60ND:
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
suggested
suggested
Frequently Asked Questions
What are the voltage and current ratings of the STD13NM60ND?
The STD13NM60ND is rated for a minimum 600V drain-source breakdown voltage and a maximum drain current of 11A, suitable for high-voltage power conversion in offline power supplies and industrial applications.
What is the on-resistance and avalanche energy rating of the STD13NM60ND?
The STD13NM60ND has a maximum drain-source on-resistance of 0.38Ω and an avalanche energy rating of 162mJ, providing both efficient conduction and robust protection against transient voltage spikes.
What package does the STD13NM60ND use?
The STD13NM60ND is packaged in a DPAK (TO-252) 3-pin surface-mount package with the case connected to the drain, enabling efficient thermal dissipation and straightforward PCB integration.
What is the FDmesh II technology used in the STD13NM60ND?
FDmesh II is STMicroelectronics' advanced trench gate technology that reduces on-resistance and switching losses compared to earlier generations, improving efficiency in high-frequency power supply designs above 600V.
Related Guides
1206 100 uF MLCC Design Guide for Compact Bulk Decoupling
Design guidance for applying CL31A107MQHNNNE and related 1206 MLCCs in compact bulk decoupling networks.
Jul 3, 2026
0402 10 nF MLCC Design Guide for High-Speed Decoupling
Practical design guidance for using CL05B103KB5NNNC and related 0402 MLCCs in high-speed decoupling networks.
Jul 3, 2026
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
How to choose CL31A107MQHNNNE and related 1206 MLCCs for low-voltage bulk capacitance and regulator stability.
Jul 2, 2026
CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
Jul 2, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $2.4200 | $12.10 |
| 25+ | $2.3000 | $57.50 |
| 50+ | $2.1800 | $109.00 |
| 2500+ | $1.4623 | $3655.75 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”