STB8N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STMicroelectronics STB8N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 7A drain current and ultra-low 560 mΩ typical on-resistance. It features a built-in diode and 120 mJ avalanche energy rating in a TO-263AB (D2PAK) package. Available from stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB8N65M5Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
4
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.9563(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650V drain-source breakdown voltage with ultra-low 560 mΩ typical on-resistance using MDmesh M5 superjunction technology
  • Built-in body diode with 120 mJ avalanche energy rating for robust operation in inductive switching circuits
  • Available in multiple packages including D2PAK, DPAK, and TO-220FP to suit various thermal management requirements

Applications

The STB8N65M5 is designed for high-efficiency switch-mode power supplies, PFC stages, and LLC resonant converters where low switching losses at 650V are critical. Its ultra-low on-resistance MDmesh M5 technology enables improved efficiency in server power supplies, solar inverters, and industrial motor drives. The avalanche-rated built-in diode also makes it reliable in hard-switching topologies with inductive loads.

Specifications

Factory Lead Time14Weeks
YTEOL6.6
Additional FeatureULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)120mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)7A
Drain-source On Resistance-Max0.6Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)70W
Pulsed Drain Current-Max (IDM)28A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB8N65M5 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the STB8N65M5?

The STB8N65M5 is rated for a minimum 650V drain-source breakdown voltage and a maximum drain current of 7A, with a typical on-resistance of 560 mΩ and maximum on-resistance of 0.6 Ω, enabling efficient high-voltage power switching in SMPS and PFC converter designs.

What packages is the STB8N65M5 available in?

The STB8N65M5 is available in D2PAK (TO-263AB), DPAK (TO-252), and TO-220FP packages, providing designers flexibility in thermal management and PCB layout, with the surface-mount D2PAK offering excellent thermal performance without a separate heatsink.

What is the avalanche energy rating of the STB8N65M5?

The STB8N65M5 has an avalanche energy rating (Eas) of 120 mJ, indicating the device can safely absorb energy spikes during unclamped inductive switching events, providing robustness against voltage transients in real-world power supply and motor drive applications.

What MDmesh M5 technology advantage does the STB8N65M5 offer?

MDmesh M5 is STMicroelectronics fifth-generation superjunction technology that delivers ultra-low on-resistance combined with high breakdown voltage, significantly reducing conduction and switching losses compared to conventional planar MOSFETs, resulting in higher efficiency and cooler operation in power conversion stages.

What is the typical application for the STB8N65M5 power MOSFET?

Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LLC resonant converters, industrial motor drives, and solar inverters operating from 400V DC bus rails where high efficiency and robustness at 650V are required.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.9563
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$1.4400$1.44
10+$1.3800$13.80
125+$1.2750$159.38
400+$0.9563$382.52
pcs
Unit price: $1.4400 · Total: $1.44

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy