STB8N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STMicroelectronics STB8N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 7A drain current and ultra-low 560 mΩ typical on-resistance. It features a built-in diode and 120 mJ avalanche energy rating in a TO-263AB (D2PAK) package. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- STB8N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.9563(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB8N65M5?
- 650V drain-source breakdown voltage with ultra-low 560 mΩ typical on-resistance using MDmesh M5 superjunction technology
- Built-in body diode with 120 mJ avalanche energy rating for robust operation in inductive switching circuits
- Available in multiple packages including D2PAK, DPAK, and TO-220FP to suit various thermal management requirements
What is STB8N65M5 used for?
The STB8N65M5 is designed for high-efficiency switch-mode power supplies, PFC stages, and LLC resonant converters where low switching losses at 650V are critical. Its ultra-low on-resistance MDmesh M5 technology enables improved efficiency in server power supplies, solar inverters, and industrial motor drives. The avalanche-rated built-in diode also makes it reliable in hard-switching topologies with inductive loads.
What are the specifications of STB8N65M5?
| Factory Lead Time | 14Weeks |
| YTEOL | 6.6 |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 120mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 7A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 28A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB8N65M5 datasheet?
STB8N65M5 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB8N65M5?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STB8N65M5?
The STB8N65M5 is rated for a minimum 650V drain-source breakdown voltage and a maximum drain current of 7A, with a typical on-resistance of 560 mΩ and maximum on-resistance of 0.6 Ω, enabling efficient high-voltage power switching in SMPS and PFC converter designs.
What packages is the STB8N65M5 available in?
The STB8N65M5 is available in D2PAK (TO-263AB), DPAK (TO-252), and TO-220FP packages, providing designers flexibility in thermal management and PCB layout, with the surface-mount D2PAK offering excellent thermal performance without a separate heatsink.
What is the avalanche energy rating of the STB8N65M5?
The STB8N65M5 has an avalanche energy rating (Eas) of 120 mJ, indicating the device can safely absorb energy spikes during unclamped inductive switching events, providing robustness against voltage transients in real-world power supply and motor drive applications.
What MDmesh M5 technology advantage does the STB8N65M5 offer?
MDmesh M5 is STMicroelectronics fifth-generation superjunction technology that delivers ultra-low on-resistance combined with high breakdown voltage, significantly reducing conduction and switching losses compared to conventional planar MOSFETs, resulting in higher efficiency and cooler operation in power conversion stages.
What is the typical application for the STB8N65M5 power MOSFET?
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LLC resonant converters, industrial motor drives, and solar inverters operating from 400V DC bus rails where high efficiency and robustness at 650V are required.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4400 | $1.44 |
| 10+ | $1.3800 | $13.80 |
| 125+ | $1.2750 | $159.38 |
| 400+ | $0.9563 | $382.52 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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