STB25N80K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB25N80K5 is a high-voltage N-channel power MOSFET rated at 800V and 19.5A with 260mΩ Rds(on) and 200mJ avalanche energy capability. Built with ST's K5 superjunction technology for high-efficiency switching in offline power supplies and PFC circuits. Available in D2PAK (TO-263) package from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB25N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.1977(MOQ 10)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800V drain-source breakdown voltage with 200mJ avalanche energy rating enables robust operation in high-voltage offline AC-DC power conversion up to 800V
- K5 superjunction technology delivers optimized trade-off between Rds(on) of 260mΩ and switching losses for high-frequency flyback and LLC resonant converter designs
- D2PAK (TO-263) surface-mount package with exposed drain pad provides excellent thermal management for high-power density board-level designs
- Integrated fast body diode supports boost PFC and synchronous rectification topologies without requiring an external freewheeling diode
Applications
The STB25N80K5 is designed for offline switch-mode power supplies including flyback converters, LLC resonant converters, and active power factor correction (PFC) stages operating from 230V AC mains. Its 800V rating and K5 superjunction technology make it suitable for industrial UPS systems, solar inverters, and EV onboard chargers requiring high-voltage switching at 19.5A. The D2PAK package enables efficient thermal dissipation in high-density power supply PCB designs.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6.7 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 19.5A |
| Drain-source On Resistance-Max | 0.26Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 250W |
| Pulsed Drain Current-Max (IDM) | 78A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB25N80K5?
The STB25N80K5 is rated for a maximum drain-source voltage (Vds) of 800V, a continuous drain current (Id) of 19.5A, and a maximum on-resistance (Rds(on)) of 260mΩ. It also features an avalanche energy (Eas) rating of 200mJ, providing robust protection against inductive voltage transients in high-voltage switching applications.
What is K5 superjunction technology and how does it benefit the STB25N80K5?
K5 is STMicroelectronics' fifth-generation superjunction MOSFET technology that uses charge-balanced columnar structures to dramatically reduce Rds(on) compared to conventional high-voltage MOSFETs of the same die size. In the STB25N80K5, this results in a 260mΩ Rds(on) at 800V, enabling higher efficiency in switch-mode power supplies and PFC circuits compared to earlier generation devices.
What package does the STB25N80K5 use?
The STB25N80K5 is housed in the D2PAK (TO-263AB) surface-mount package, which is a large-body SMD package with an exposed metal drain tab for direct PCB thermal mounting. The JEDEC-95 Code TO-263AB designation confirms this package format, which is well-suited for high-power board-level designs requiring SMD assembly and good thermal dissipation.
What power supply topologies is the STB25N80K5 designed for?
The STB25N80K5 is optimized for offline AC-DC power conversion topologies including flyback converters, LLC series resonant converters, and boost power factor correction (PFC) stages. Its 800V voltage rating accommodates the high voltage stress seen in 85-265V universal AC input designs, while the K5 superjunction technology ensures efficient switching at typical 65-130kHz operating frequencies.
Is the STB25N80K5 suitable for renewable energy and EV charging applications?
Yes, the STB25N80K5 is well-suited for solar inverter DC-link switching, bidirectional EV onboard chargers, and industrial UPS systems. Its 800V breakdown voltage, 200mJ avalanche energy handling, and low switching losses from K5 superjunction technology make it a reliable choice for the demanding switching conditions in renewable energy power conversion.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $4.2010 | $42.01 |
| 100+ | $3.0233 | $302.33 |
| 500+ | $2.7779 | $1388.97 |
| 1000+ | $2.2428 | $2242.80 |
| 4000+ | $2.2384 | $8953.60 |
| 8000+ | $2.1977 | $17581.60 |
In Stock · 24h Response · Worldwide Shipping
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