STB16N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STMicroelectronics STB16N65M5 is a 650V N-channel power MOSFET with ultra-low 0.279Ω on-resistance and 12A drain current in a D2PAK-3 package. It integrates a built-in body diode and 200mJ avalanche energy rating. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- STB16N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.6875(MOQ 1000)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB16N65M5?
- 650V breakdown voltage with ultra-low 0.279Ω drain-source on-resistance for high efficiency power conversion
- 12A continuous drain current with 200mJ avalanche energy rating for robust rugged operation
- Built-in body diode with single configuration in thermally efficient D2PAK-3 (TO-263) package
- MDmesh M5 technology delivering best-in-class figure of merit (Rdson x Qg) for switching applications
What is STB16N65M5 used for?
The STB16N65M5 is designed for high-voltage switching applications including switch-mode power supplies (SMPS), PFC stages, and motor drive circuits operating from AC mains. Its ultra-low on-resistance and high avalanche energy rating make it ideal for LLC resonant converters and flyback topologies in industrial and consumer power supplies. The D2PAK-3 package with drain-connected tab enables excellent thermal management on standard FR4 PCBs without additional insulation.
What are the specifications of STB16N65M5?
| Pbfree Code | Yes |
| YTEOL | 0 |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.279Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the STB16N65M5 datasheet?
STB16N65M5 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB16N65M5?
Compatible alternatives and drop-in replacements for STB16N65M5:
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Frequently Asked Questions
What are the key electrical specifications of the STB16N65M5?
The STB16N65M5 features a 650V minimum drain-source breakdown voltage, 12A maximum continuous drain current, and 0.279Ω maximum drain-source on-resistance (Rds(on)). It also has a 200mJ avalanche energy rating (Eas) and includes an integrated body diode, making it a complete switching element for high-voltage power designs.
What package does the STB16N65M5 use and how does it aid thermal management?
The STB16N65M5 uses the D2PAK-3 (TO-263) surface-mount package with the drain connected to the exposed metal tab. This tab can be soldered directly to a large copper pad on the PCB, providing a low thermal resistance path to dissipate heat without requiring additional isolation hardware, simplifying thermal design in high-power applications.
What switching power supply topologies is the STB16N65M5 suited for?
The STB16N65M5 is optimized for high-voltage switching topologies including flyback converters, LLC resonant converters, active power factor correction (PFC) boost stages, and half-bridge or full-bridge inverters. Its 650V rating covers offline mains-connected designs, while the ultra-low Rds(on) of 0.279Ω minimizes conduction losses at 12A load current.
What does the M5 designation mean in STB16N65M5?
The M5 suffix indicates this MOSFET uses STMicroelectronics' MDmesh M5 superjunction technology, which delivers an optimized trade-off between Rds(on) and gate charge (Qg). Compared to earlier MDmesh generations, M5 technology reduces the Rds(on) × Qg figure of merit, improving overall switching efficiency in hard-switched and soft-switched converter designs.
Is the STB16N65M5 RoHS compliant and what is its terminal finish?
Yes, the STB16N65M5 is fully RoHS compliant (Pbfree Code: Yes) with a lead-free terminal finish. It meets JESD-609 environmental compliance requirements. The D2PAK-3 package is widely compatible with automated PCB assembly and reflow soldering processes used in modern manufacturing.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000+ | $1.7020 | $1701.97 |
| 2000+ | $1.6875 | $3375.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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