STB34N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STB34N65M5 is a high-voltage N-Channel MOSFET from STMicroelectronics in TO-263 package. Key specs include 650V breakdown voltage, 28A drain current, and ultra-low 0.11Ω on-resistance with 510mJ avalanche energy. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB34N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.6531(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V breakdown voltage N-Channel MOSFET with single built-in diode for robust switching
- Ultra-low 0.11Ω maximum drain-source on-resistance reducing conduction losses significantly
- High 28A drain current capability supporting demanding power conversion loads
- 510mJ avalanche energy rating providing exceptional ruggedness against inductive switching transients
Applications
The STB34N65M5 is optimized for high-efficiency switch-mode power supplies, PFC boost converters, and resonant half-bridge topologies operating from AC mains. Its combination of 650V rating and extremely low 0.11Ω on-resistance delivers excellent efficiency in server PSUs, solar inverters, and industrial drives. The TO-263 surface-mount package facilitates high-density PCB layouts with good thermal dissipation.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 510mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 28A |
| Drain-source On Resistance-Max | 0.11Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 112A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source breakdown voltage of the STB34N65M5?
The STB34N65M5 is rated for a minimum drain-source breakdown voltage of 650V, making it ideal for power factor correction circuits, switch-mode power supplies, and inverter stages that operate directly from 230V AC mains input rectified to approximately 400V DC bus.
How low is the on-resistance and what drain current does the STB34N65M5 support?
The STB34N65M5 features an exceptionally low maximum drain-source on-resistance of 0.11Ω combined with a 28A maximum drain current rating, enabling high-efficiency operation with minimal conduction losses in high-power industrial and server power supply applications.
What package does the STB34N65M5 use and is it surface-mountable?
The STB34N65M5 uses the TO-263AB (JEDEC-95) surface-mount package, also known as D2PAK. This package provides excellent thermal performance through the exposed drain tab, making it suitable for automated SMT assembly in high-density power electronics boards.
What is the avalanche energy rating of the STB34N65M5?
The STB34N65M5 is rated for 510mJ of avalanche energy (Eas), offering outstanding ruggedness against unclamped inductive switching events. This high rating makes it well-suited for motor drive and power supply designs where voltage spikes may exceed the supply rail momentarily.
What are the primary applications for the STB34N65M5?
Primary applications include switch-mode power supplies, power factor correction boost stages, resonant converters, and motor drive inverters. The 650V/28A/0.11Ω combination targets high-efficiency industrial power equipment, renewable energy inverters, and server power systems requiring compact and reliable switching devices.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.4700 | $5.47 |
| 10+ | $4.7510 | $47.51 |
| 100+ | $3.4436 | $344.36 |
| 500+ | $3.2474 | $1623.71 |
| 1000+ | $2.7079 | $2707.86 |
| 2000+ | $2.6531 | $5306.26 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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