STB6N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB6N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 4.5A with a typical on-resistance of 1.06 ohms and 86mJ avalanche energy rating. MDmesh M2 superjunction technology delivers reduced gate charge and switching losses for efficient high-voltage power conversion. Available in D2PAK package, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB6N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4439(MOQ 10)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- MDmesh M2 superjunction technology achieving ultra-low figure of merit (RDS(on) x Qg) for high-efficiency switching in offline power converters
- Built-in fast recovery diode and 86mJ avalanche energy rating providing robust reliability in inductive load switching applications
- Ultra-low 0.7pF feedback capacitance (Crss) minimizing Miller effect and enabling high-frequency operation with excellent EMI performance
Applications
The STB6N60M2 is optimized for high-efficiency offline power conversion including flyback converters, LLC resonant topologies, and PFC boost stages operating from rectified AC mains up to 600V. Its low on-resistance and reduced gate charge enable high switching frequencies with minimal conduction and switching losses in adapters, LED drivers, and industrial power supplies. The device is also used in motor control circuits and UPS systems where reliable high-voltage switching with a built-in body diode is essential.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 86mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 4.5A |
| Drain-source On Resistance-Max | 1.2Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.7pF |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60W |
| Pulsed Drain Current-Max (IDM) | 18A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STB6N60M2?
The STB6N60M2 has a minimum drain-source breakdown voltage of 600V and a maximum continuous drain current of 4.5A. The typical on-resistance is 1.06 ohms with a maximum of 1.2 ohms, and the device features an 86mJ avalanche energy rating for robust unclamped inductive switching performance.
What does MDmesh M2 technology offer compared to standard MOSFETs?
MDmesh M2 is STMicroelectronics' second-generation superjunction technology, offering a significantly improved figure of merit (RDS(on) x Qg) compared to conventional MOSFETs. This results in lower conduction losses from reduced on-resistance and lower switching losses from reduced gate charge, enabling higher efficiency in switch-mode power supply designs.
What is the significance of the 0.7pF feedback capacitance (Crss) in the STB6N60M2?
The ultra-low maximum feedback capacitance (Crss) of 0.7pF reduces the Miller effect during switching transitions, minimizing voltage overshoot and ringing. This characteristic improves EMI performance and enables stable high-frequency operation in flyback and resonant converter designs, reducing the need for external snubber components.
What packages is the STB6N60M2 available in?
The STB6N60M2 is available in both D2PAK (TO-263) and DPAK (TO-252) surface-mount packages, with the case connected to the drain terminal. Both packages provide efficient thermal management through the PCB copper, and the drain-connected tab eliminates isolation requirements between the device and its heatsink area.
What are typical applications for the STB6N60M2?
Typical applications include offline flyback converters, LLC resonant power supplies, power factor correction (PFC) boost stages, LED lighting drivers, AC-DC adapters, and industrial motor drives. The 600V rating covers full-wave rectified mains voltage worldwide, and the MDmesh M2 technology enables efficient designs meeting Energy Star and EU Ecodesign efficiency targets.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.4439 | $4.44 |
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