STB6N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

STMicroelectronics STB6N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 4.5A with a typical on-resistance of 1.06 ohms and 86mJ avalanche energy rating. MDmesh M2 superjunction technology delivers reduced gate charge and switching losses for efficient high-voltage power conversion. Available in D2PAK package, in stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB6N60M2Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.4439(MOQ 10)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • MDmesh M2 superjunction technology achieving ultra-low figure of merit (RDS(on) x Qg) for high-efficiency switching in offline power converters
  • Built-in fast recovery diode and 86mJ avalanche energy rating providing robust reliability in inductive load switching applications
  • Ultra-low 0.7pF feedback capacitance (Crss) minimizing Miller effect and enabling high-frequency operation with excellent EMI performance

Applications

The STB6N60M2 is optimized for high-efficiency offline power conversion including flyback converters, LLC resonant topologies, and PFC boost stages operating from rectified AC mains up to 600V. Its low on-resistance and reduced gate charge enable high switching frequencies with minimal conduction and switching losses in adapters, LED drivers, and industrial power supplies. The device is also used in motor control circuits and UPS systems where reliable high-voltage switching with a built-in body diode is essential.

Specifications

Factory Lead Time14Weeks
YTEOL6
Avalanche Energy Rating (Eas)86mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)4.5A
Drain-source On Resistance-Max1.2Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)0.7pF
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)60W
Pulsed Drain Current-Max (IDM)18A
Surface MountYES
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STB6N60M2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the STB6N60M2?

The STB6N60M2 has a minimum drain-source breakdown voltage of 600V and a maximum continuous drain current of 4.5A. The typical on-resistance is 1.06 ohms with a maximum of 1.2 ohms, and the device features an 86mJ avalanche energy rating for robust unclamped inductive switching performance.

What does MDmesh M2 technology offer compared to standard MOSFETs?

MDmesh M2 is STMicroelectronics' second-generation superjunction technology, offering a significantly improved figure of merit (RDS(on) x Qg) compared to conventional MOSFETs. This results in lower conduction losses from reduced on-resistance and lower switching losses from reduced gate charge, enabling higher efficiency in switch-mode power supply designs.

What is the significance of the 0.7pF feedback capacitance (Crss) in the STB6N60M2?

The ultra-low maximum feedback capacitance (Crss) of 0.7pF reduces the Miller effect during switching transitions, minimizing voltage overshoot and ringing. This characteristic improves EMI performance and enables stable high-frequency operation in flyback and resonant converter designs, reducing the need for external snubber components.

What packages is the STB6N60M2 available in?

The STB6N60M2 is available in both D2PAK (TO-263) and DPAK (TO-252) surface-mount packages, with the case connected to the drain terminal. Both packages provide efficient thermal management through the PCB copper, and the drain-connected tab eliminates isolation requirements between the device and its heatsink area.

What are typical applications for the STB6N60M2?

Typical applications include offline flyback converters, LLC resonant power supplies, power factor correction (PFC) boost stages, LED lighting drivers, AC-DC adapters, and industrial motor drives. The 600V rating covers full-wave rectified mains voltage worldwide, and the MDmesh M2 technology enables efficient designs meeting Energy Star and EU Ecodesign efficiency targets.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.4439
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$0.4439$4.44
pcs
Unit price: $0.4439 · Total: $4.44

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy