STB38N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB38N65M5 is a high-voltage N-channel Power MOSFET from STMicroelectronics rated at 650V and 30A with a maximum RDS(on) of 95mΩ. Built with MDmesh M5 technology, it delivers excellent switching performance and a 660mJ avalanche energy rating for robust reliability. Available in a TO-220AB package with worldwide shipping from authorized global distributors.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB38N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.8147(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V breakdown voltage and 30A continuous drain current for high-power conversion applications
- MDmesh M5 technology provides ultra-low switching losses and high avalanche energy rating of 660mJ
- Maximum RDS(on) of 95mΩ minimizes conduction losses in hard-switching and resonant topologies
- TO-220AB through-hole package with isolated case simplifies thermal management in high-power designs
Applications
The STB38N65M5 is designed for high-voltage power conversion applications including offline switch-mode power supplies, PFC stages, and motor drive inverters operating from the AC mains. Its 650V rating and low switching losses make it especially effective in LLC resonant converters, flyback converters, and active PFC boost stages used in industrial power supplies and EV chargers. The high avalanche energy tolerance further enhances system robustness in applications with inductive load switching.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 660mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 0.095Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 190W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STB38N65M5?
The STB38N65M5 is rated for a maximum drain-to-source voltage (VDS) of 650V and a continuous drain current (ID) of 30A at 25°C. These ratings make it suitable for high-voltage power conversion applications such as PFC boost converters and offline SMPS operating from global AC mains.
What technology does the STB38N65M5 use and why is it beneficial?
The STB38N65M5 uses STMicroelectronics' MDmesh M5 technology, which is an advanced trench gate structure optimized for low switching losses and high-frequency operation. This translates to higher efficiency in resonant and hard-switching topologies such as LLC converters and bridge circuits, reducing heat generation and enabling higher switching frequencies.
What is the avalanche energy rating of the STB38N65M5?
The STB38N65M5 has an avalanche energy rating (EAS) of 660mJ, indicating strong robustness against transient voltage spikes caused by inductive load switching. This high avalanche capability provides a safety margin in motor drive and power supply applications where voltage clamping may not always prevent avalanche events.
What package does the STB38N65M5 use and how does it aid thermal management?
The STB38N65M5 is housed in a TO-220AB through-hole package with an isolated case, allowing the heatsink to be attached directly without an insulating pad in designs that share a common heatsink. This package supports excellent thermal dissipation, critical for sustaining 30A operation in high-power industrial and energy systems.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $5.0270 | $50.27 |
| 100+ | $3.6560 | $365.60 |
| 500+ | $3.4882 | $1744.12 |
| 1000+ | $2.8845 | $2884.55 |
| 2000+ | $2.8499 | $5699.76 |
| 4000+ | $2.8147 | $11258.76 |
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