STB38N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STB38N65M5 is a high-voltage N-channel Power MOSFET from STMicroelectronics rated at 650V and 30A with a maximum RDS(on) of 95mΩ. Built with MDmesh M5 technology, it delivers excellent switching performance and a 660mJ avalanche energy rating for robust reliability. Available in a TO-220AB package with worldwide shipping from authorized global distributors.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB38N65M5Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $2.8147(MOQ 10)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650V breakdown voltage and 30A continuous drain current for high-power conversion applications
  • MDmesh M5 technology provides ultra-low switching losses and high avalanche energy rating of 660mJ
  • Maximum RDS(on) of 95mΩ minimizes conduction losses in hard-switching and resonant topologies
  • TO-220AB through-hole package with isolated case simplifies thermal management in high-power designs

Applications

The STB38N65M5 is designed for high-voltage power conversion applications including offline switch-mode power supplies, PFC stages, and motor drive inverters operating from the AC mains. Its 650V rating and low switching losses make it especially effective in LLC resonant converters, flyback converters, and active PFC boost stages used in industrial power supplies and EV chargers. The high avalanche energy tolerance further enhances system robustness in applications with inductive load switching.

Specifications

Factory Lead Time14Weeks
YTEOL5
Avalanche Energy Rating (Eas)660mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)30A
Drain-source On Resistance-Max0.095Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)190W
Pulsed Drain Current-Max (IDM)120A
Surface MountNO
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB38N65M5 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the STB38N65M5?

The STB38N65M5 is rated for a maximum drain-to-source voltage (VDS) of 650V and a continuous drain current (ID) of 30A at 25°C. These ratings make it suitable for high-voltage power conversion applications such as PFC boost converters and offline SMPS operating from global AC mains.

What technology does the STB38N65M5 use and why is it beneficial?

The STB38N65M5 uses STMicroelectronics' MDmesh M5 technology, which is an advanced trench gate structure optimized for low switching losses and high-frequency operation. This translates to higher efficiency in resonant and hard-switching topologies such as LLC converters and bridge circuits, reducing heat generation and enabling higher switching frequencies.

What is the avalanche energy rating of the STB38N65M5?

The STB38N65M5 has an avalanche energy rating (EAS) of 660mJ, indicating strong robustness against transient voltage spikes caused by inductive load switching. This high avalanche capability provides a safety margin in motor drive and power supply applications where voltage clamping may not always prevent avalanche events.

What package does the STB38N65M5 use and how does it aid thermal management?

The STB38N65M5 is housed in a TO-220AB through-hole package with an isolated case, allowing the heatsink to be attached directly without an insulating pad in designs that share a common heatsink. This package supports excellent thermal dissipation, critical for sustaining 30A operation in high-power industrial and energy systems.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $2.8147
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$5.0270$50.27
100+$3.6560$365.60
500+$3.4882$1744.12
1000+$2.8845$2884.55
2000+$2.8499$5699.76
4000+$2.8147$11258.76
pcs
Unit price: $5.0270 · Total: $50.27

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy