STMicroelectronics

Use the download button to access the STD5N95K3 schematic symbol, PCB footprint, and 3D model.

TO-220FP, 3 PIN

STMicroelectronics STF34NM60ND is an N-channel power MOSFET rated at 600 V and 29 A with ultra-low on-resistance of 0.11 Ω in a TO-220FP isolated package. Designed for high-efficiency switching in industrial and power-conversion circuits. Available worldwide with 14-week factory lead time.

High side current sense high voltage op amp

STMicroelectronics STF24N60M2 N-channel MOSFET Transistor, 18 A, 650 V, 3-Pin TO-220FP

STMicroelectronics STF38N65M5 is a high-voltage N-Channel MOSFET rated at 650V and 30A in an isolated RoHS-compliant TO-220FP package. Features ultra-low 95mΩ on-resistance, 660mJ avalanche energy rating, and built-in diode. Available from stock with worldwide shipping.

STF25NM60ND is a 600V N-channel Power MOSFET by STMicroelectronics, featuring MDmesh technology for enhanced efficiency. Key specs: 21A drain current, 0.16Ω on-resistance, 850mJ avalanche energy rating. From $2.50, in stock with worldwide shipping.

STD7N60M2 is an N-channel 600V MDmesh M2 Power MOSFET offering 5A drain current and 0.86Ω typical RDS(on). Designed for high-efficiency switching in compact DPAK packages with low switching losses and wide -55°C to 150°C operating range. Available from STMicroelectronics with worldwide shipping.

The STF20N65M5 is an N-Channel 650V MDmesh M5 Power MOSFET from STMicroelectronics with 18A drain current and 0.160Ω typical on-resistance. It is housed in a TO-220FP vertical package optimized for efficient thermal management in power conversion designs. Available from authorized distributors with worldwide shipping.

The STF31N65M5 is an N-Channel power MOSFET from STMicroelectronics featuring a 650V drain-source voltage and 22A continuous drain current. It delivers up to 30W power dissipation in a through-hole TO-220F package, ideal for efficient power switching. Available with worldwide shipping and competitive pricing for industrial and consumer electronics designs.

The STF23NM50N is an N-channel 500 V MDmesh II Power MOSFET with 17 A drain current and 162 mΩ typical on-resistance. It features an isolated D²PAK package with integrated body diode, delivering high-efficiency switching performance for demanding power conversion. Available in multiple package options with worldwide shipping and volume discounts.

The STD80N4F6 is an N-Channel power MOSFET from STMicroelectronics featuring 80A drain current and 70W power dissipation in a compact package. Designed for high-efficiency switching applications with low on-resistance and fast switching characteristics. Available from authorized distributors with worldwide shipping.

STF25N80K5 is an N-Channel MOSFET in TO-220FP package from STMicroelectronics. Key specs include 800V drain-source breakdown voltage, 19.5A max drain current, and 0.26Ω on-resistance. Available from stock with worldwide shipping.

STF21N65M5 is an N-Channel MOSFET from STMicroelectronics in a TO-220FP package. It features a 650V drain-source breakdown voltage, 17A drain current, and 0.19Ω on-resistance. From $2.50, available in stock with worldwide shipping.

The STMicroelectronics STF13N60M2 is a single N-channel power MOSFET rated at 600V drain-source breakdown voltage and 11A maximum drain current with 0.38Ω on-resistance in a TO-220FP isolated package. It integrates a built-in diode and 125mJ avalanche energy rating for robust switching performance in power conversion applications. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.

STF22NM60N is an N-channel MDmesh II Power MOSFET from STMicroelectronics. It features 600 V breakdown voltage, 16 A drain current, and 0.20 Ω typical on-resistance in D²PAK, TO-220FP, and TO-220 packages. Available competitively priced with worldwide shipping and in-stock inventory.

The STMicroelectronics STF14NM50N is an N-channel power MOSFET rated for 500V and 14A in a TO-220FP 3-pin package. It features RoHS-compliant lead-free matte tin terminal finish for reliable soldering. Available from stock with worldwide shipping.

STF18N60M2 is an N-Channel Power MOSFET in TO-220FP package with 600V breakdown voltage and 13A drain current. Features ultra-low 0.28Ω on-resistance with built-in diode and 135mJ avalanche energy rating. From $1.50 in stock with worldwide shipping.

STF18NM60ND is an N-Channel MOSFET from STMicroelectronics featuring 600 V breakdown voltage and 13 A drain current with FDmesh technology. It delivers ultra-low 0.29 Ω on-resistance and 187 mJ avalanche energy rating in a compact TO-220FP isolated package. Available from stock worldwide with competitive pricing for power conversion applications.

The STD80N6F6 is an N-Channel power MOSFET from STMicroelectronics featuring 80 A drain current and 120 W power dissipation in a surface-mount package. Ideal for high-efficiency switching in industrial and automotive applications. Available from authorized distributors worldwide with competitive pricing and in-stock availability.

STF12N65M5 is an N-channel 650 V MDmesh M5 Power MOSFET with 8.5 A drain current and 390 mΩ typical on-resistance. It features advanced MDmesh M5 technology for superior switching performance and low conduction losses. Available in TO-220FP and TO-220 packages with competitive pricing and worldwide shipping.

STF13N80K5 is an N-Channel MOSFET in TO-220FP package rated at 800V and 12A with 0.45Ω on-resistance. Features isolated case, single configuration with built-in diode, and 148mJ avalanche energy rating. Available from STMicroelectronics with worldwide shipping.

STMicroelectronics STD95N2LH5 is an N-Channel STripFET V MOSFET rated at 80A drain current and 25V breakdown voltage. Features ultra-low 6mΩ on-resistance in a compact DPAK (TO-252) package. Available from stock with worldwide shipping.

STMicroelectronics STF11N65M5 is an N-channel MDmesh M5 Power MOSFET rated at 650V and 9A with 0.48 Ohm maximum on-resistance. It features a built-in body diode and 130 mJ avalanche energy rating for rugged switching applications. Available in isolated TO-220F package with worldwide shipping.

STF11NM60ND is an N-channel 600 V FDmesh II Power MOSFET from STMicroelectronics in a TO-220FP fully isolated package. It delivers 10 A continuous drain current with 370 mΩ typical RDS(on) and 200 mJ avalanche energy rating. Competitively priced and available in stock with worldwide shipping.

The STF10N60M2 is an N-channel 600V MDmesh M2 Power MOSFET from STMicroelectronics offering 7.5A drain current and 0.55Ω typical on-resistance in a TO-220FP isolated package. It features advanced MDmesh M2 technology for superior switching performance and low gate charge. Available from stock worldwide with competitive pricing for power conversion designs.

The STD3NM60N is an N-channel power MOSFET with 600V breakdown voltage and 3.3A drain current in a DPAK (TO-252) package. It features 1.8Ω maximum on-resistance, 86mJ avalanche energy rating, and integrated body diode for reliable switching. Available from stock worldwide with competitive pricing.

The STD100N10F7 is an N-Channel power MOSFET from STMicroelectronics with a 100 V breakdown voltage and 32 A maximum drain current. It features an ultra-low 8 mΩ on-resistance and 400 mJ avalanche energy rating in an isolated TO-220FP package. Available in stock with worldwide shipping.

STMicroelectronics STF100N10F7 is an N-Channel power MOSFET rated at 100V and 32A in an isolated TO-220FP package. Features ultra-low 8mΩ drain-source on-resistance, 400mJ avalanche energy rating, and built-in diode. Available from stock with worldwide shipping.

The STD7ANM60N is an automotive-grade N-channel power MOSFET from STMicroelectronics rated at 600V and 5A with a typical on-resistance of 800mΩ using MDmesh II technology. It features 119mJ avalanche energy rating and built-in diode in a compact DPAK package. Available from authorized distributors worldwide with fast shipping.

N-channel 800 V, 0.95 Ω typ 6 A MDmesh K5 Power MOSFET in a DPAK package -55 to 150 °C

STMicroelectronics STD30PF03LT4 is a P-channel STripFET power MOSFET rated 30V, 24A with ultra-low 40 milliohm on-resistance and 850mJ avalanche energy rating. Housed in a DPAK (TO-252) surface-mount package for high-efficiency load switching and motor control in automotive and industrial applications.

STMicroelectronics STD17NF03LT4 is an N-channel MOSFET with 30V breakdown voltage and 17A drain current featuring 60mΩ on-resistance in a DPAK-3 surface-mount package. Includes built-in body diode and 200mJ avalanche energy rating for robust inductive load switching. Available from stock with worldwide shipping.

The STMicroelectronics STD26P3LLH6 is a P-channel power MOSFET with a 30V breakdown voltage, 12A continuous drain current, and ultra-low 45mΩ on-resistance in a DPAK (TO-252) package. It includes a built-in body diode and features 350 mJ avalanche energy rating for robust protection. Available from stock with worldwide shipping at competitive pricing.

STD8N80K5 is a high-voltage N-Channel MOSFET from STMicroelectronics in surface-mount DPAK (TO-252) package. Key specs include 800V drain-source breakdown voltage, 6A drain current, and 0.95Ω on-resistance with built-in diode. Available from stock with worldwide shipping.

STMicroelectronics STD5NK40Z-1 is an N-Channel power MOSFET with 400V breakdown voltage and 3A maximum drain current with 1.8Ω on-resistance in an IPAK-3 package. Features avalanche energy rating of 130mJ and integrated built-in diode for robust switching protection. Available from authorized distributors with worldwide shipping.

The STD3NK100Z is a high-voltage N-channel Power MOSFET from STMicroelectronics featuring 1000V drain-source breakdown voltage, 2.5A continuous drain current, and 6-ohm maximum on-resistance in a compact DPAK-3 surface-mount package. It integrates a built-in body diode and delivers 110mJ avalanche energy capability for robust high-voltage switching. Available from authorized distributors with in-stock inventory and worldwide shipping for high-voltage power circuit designs.

The STD25N10F7 is an N-channel power MOSFET by STMicroelectronics with a built-in body diode. Key specs: 100 V drain-source breakdown voltage, 25 A max drain current, ultra-low 0.035 Ω on-resistance, DPAK-3 package. Available with worldwide shipping.

STMicroelectronics STD4N80K5 is an N-channel MDmesh K5 Power MOSFET rated at 800V and 3A with a typical on-resistance of 2.1 ohms. Featuring advanced MDmesh K5 technology, it delivers superior switching efficiency and avalanche energy rating of 74.5mJ. Available in DPAK (TO-252) package, in stock with worldwide shipping.

The STD17NF25 is an N-channel Power MOSFET from STMicroelectronics rated at 250V and 17A with a maximum RDS(on) of 165mΩ in a DPAK surface-mount package. It features a built-in body diode and 100mJ avalanche energy rating, making it robust for inductive switching applications. Available from global distributors with competitive pricing and worldwide shipping.

STMicroelectronics STD45N10F7 is an N-channel power MOSFET rated at 100V and 45A with an ultra-low Rds(on) of 18mΩ and 190mJ avalanche energy capability. Designed for high-efficiency switching in power conversion and motor drive circuits. Available in DPAK (TO-252) package from stock with worldwide shipping.

LD59015C33R, Linear Voltage Regulator, Thermal Shut Down 150mA 3.3 V, ±1.8%, 5-Pin SOT-323

The STD18N55M5 is an N-channel power MOSFET by STMicroelectronics with a built-in body diode. Key specs: 550 V drain-source breakdown voltage, 14 A max drain current, 0.21 Ω on-resistance, DPAK-3 (TO-252) package. Available with worldwide shipping.

The STD10NM60N is an N-channel 600V MDmesh II Power MOSFET from STMicroelectronics, offering 10A continuous drain current, a typical on-resistance of 530mΩ, and 200mJ avalanche energy rating in a surface-mount DPAK (TO-252) package. Its MDmesh II technology delivers an excellent RDS(on) x area figure of merit for compact, efficient power designs. Available from authorized distributors worldwide with in-stock inventory and global shipping.

N-channel 650 V, 198 mΩ typ., 15 A, MDmesh M5 Power MOSFET in a DPAK package -55 to 150 °C

STMicroelectronics STBB2JAD-R is a current-mode PWM switching regulator in a compact 20-ball flip-chip BGA package. Operates from 2.4V to 5.5V input with 3.6V nominal, ideal for mobile and portable power management. Available from stock with worldwide shipping.

ISOLATED TO-220AB, 3 PIN

STMicroelectronics STD10NM60ND is an N-channel power MOSFET with 600V drain-source breakdown voltage, 8A maximum drain current, and 0.6Ω maximum on-resistance in a DPAK-3 TO-252 package. It features a built-in body diode and 130mJ avalanche energy rating for robust switching in high-voltage power applications. Available in stock from STMicroelectronics with worldwide shipping.

The STB7NK80ZT4 is an N-channel power MOSFET from STMicroelectronics rated at 800V and 5.2A in a D2PAK (TO-263AB) package. It features avalanche rating with 210 mJ energy handling, 1.8 ohm on-resistance, and a built-in diode for robust switching applications. Available worldwide with competitive pricing and fast shipping.

The STB80NF55-08T4 is an N-Channel power MOSFET from STMicroelectronics rated at 55 V breakdown voltage and 80 A maximum drain current. It features an ultra-low 8 mΩ on-resistance and a high 1000 mJ avalanche energy rating in a D2PAK (TO-263) surface-mount package. RoHS compliant and available in stock worldwide.