STB34NM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB34NM60N is an N-Channel 600V MDmesh II Power MOSFET from STMicroelectronics with a 31.5A continuous drain current and 92mΩ typical RDS(on), featuring a built-in diode and 345mJ avalanche energy rating. It is available in D²PAK (TO-263AB) and TO-220 packages for high-efficiency power switching. Available in stock worldwide with competitive pricing for industrial and power conversion applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB34NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $2.3486(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V, 31.5A MDmesh II N-Channel MOSFET with 92mΩ typical RDS(on) for low conduction loss in high-voltage switching
- Built-in body diode with 345mJ avalanche energy rating (Eas) providing robust unclamped inductive switching (UIS) protection
- Available in D²PAK (TO-263AB) surface-mount and TO-220 through-hole packages for design flexibility in power conversion stages
- STMicroelectronics MDmesh II technology delivering an optimized balance of switching speed and on-state resistance for SMPS efficiency
Applications
The STB34NM60N is well suited for high-voltage power conversion applications including switch-mode power supplies (SMPS), PFC boost converters, and motor drive inverters operating from rectified 230VAC mains. Its 600V breakdown voltage and 31.5A current rating make it effective in LLC resonant converters, half-bridge, and full-bridge topologies used in industrial drives and server power supplies. The built-in diode and high avalanche energy rating also make it robust in inductive load switching circuits for relay drivers and solenoid controllers.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 345mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 31.5A |
| Drain-source On Resistance-Max | 0.105Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 210W |
| Pulsed Drain Current-Max (IDM) | 126A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the drain-source breakdown voltage and current rating of the STB34NM60N?
The STB34NM60N has a minimum drain-source breakdown voltage of 600V and a maximum continuous drain current of 31.5A, making it suitable for high-voltage power conversion applications such as SMPS operating from rectified AC mains.
What is the RDS(on) of the STB34NM60N?
The STB34NM60N has a typical drain-source on-resistance of 92mΩ and a maximum of 105mΩ, providing low conduction losses in continuous conduction mode power supplies and motor drives at high drain current levels.
Does the STB34NM60N have a built-in diode and what is its avalanche rating?
Yes, the STB34NM60N includes a built-in body diode in a single-device configuration. It is rated for 345mJ avalanche energy (Eas), providing good robustness against unclamped inductive switching transients common in motor drive and relay circuits.
What packages is the STB34NM60N available in?
The STB34NM60N is available in D²PAK (TO-263AB), a surface-mount package with excellent thermal performance, as well as TO-220, a through-hole package popular in prototype and higher-power designs requiring external heatsinking.
What is MDmesh II technology used in the STB34NM60N?
MDmesh II is STMicroelectronics' second-generation super-junction MOSFET technology optimized for high-voltage applications, offering a superior figure of merit (RDS(on) x Qg) compared to conventional planar MOSFETs, enabling higher efficiency in SMPS and PFC converter designs.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.4100 | $11.41 |
| 10+ | $7.8790 | $78.79 |
| 100+ | $6.1258 | $612.58 |
| 1000+ | $2.3486 | $2348.60 |
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