STB13N80K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB13N80K5 is an N-channel power MOSFET from STMicroelectronics rated at 800V breakdown voltage and 12A drain current with a maximum on-resistance of 0.45 ohm and 148 mJ avalanche energy rating. It integrates a built-in body diode for robust switching in high-voltage power conversion circuits. Available in TO-263 (D2PAK) surface-mount package with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB13N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.9290(MOQ 10)
- Temp Range
- -55.0°C to ?°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800V minimum drain-source breakdown voltage enables safe operation in high-voltage AC/DC conversion and industrial power supply applications
- Ultra-low 0.45 Ω maximum RDS(on) minimizes conduction losses and reduces heat dissipation in 12A switching applications
- 148 mJ avalanche energy rating provides robust protection against inductive load voltage spikes and unclamped switching events
- Built-in body diode eliminates the need for an external freewheeling diode, simplifying PCB layout and reducing component count
Applications
The STB13N80K5 is well-suited for switch-mode power supplies (SMPS), PFC (power factor correction) boost converters, and flyback converters operating from rectified mains voltage where 800V breakdown margin is required. Its low RDS(on) of 0.45 Ω and 12A current rating make it efficient for LLC resonant converters, motor drive inverters, and solar inverter bridge stages. The robust avalanche rating also makes it a reliable choice for inductive motor drives and industrial power tools where load transients can generate significant voltage overshoots.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 148mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.45Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 48A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STB13N80K5?
The STB13N80K5 is rated for a minimum 800V drain-source breakdown voltage (VDS) and a maximum continuous drain current of 12A. These ratings make it suitable for high-voltage power switching in AC/DC converters operating from rectified 230V mains, as well as industrial motor drives and power factor correction circuits where high-voltage robustness is essential.
What is the on-resistance of the STB13N80K5 and why does it matter?
The STB13N80K5 has a maximum drain-source on-resistance (RDS(on)) of 0.45 Ω. A lower RDS(on) directly reduces conduction losses (P = I² × RDS(on)), minimizing heat generation and improving efficiency in power conversion applications. At 12A, this corresponds to a maximum conduction loss of approximately 64.8W, which should be managed with proper thermal design in the TO-263 package.
What is the avalanche energy rating of the STB13N80K5 and when is it important?
The STB13N80K5 is rated for 148 mJ of avalanche energy (Eas), which defines its ability to absorb energy from unclamped inductive switching events without damage. This specification is critical in motor drive and relay switching applications where inductive loads generate voltage spikes exceeding VDS during turn-off. A higher avalanche rating provides more robust protection against transient overvoltage conditions.
What package does the STB13N80K5 use?
The STB13N80K5 is housed in a TO-263 (D2PAK-3/2) surface-mount package with JEDEC-95 code TO-263AB. The TO-263 package is a surface-mount equivalent of the through-hole TO-220, offering excellent thermal performance with a large exposed drain tab for heat sinking. This package is widely used in high-power SMT designs for switch-mode power supplies and motor drives.
Does the STB13N80K5 include a built-in diode and what is its benefit?
Yes, the STB13N80K5 has a built-in body diode (configuration: SINGLE WITH BUILT-IN DIODE) and the case is connected to the drain. The integrated body diode acts as a freewheeling diode in switching converter topologies, eliminating the need for a separate external diode in synchronous rectification, half-bridge, and full-bridge applications. This reduces component count and simplifies PCB layout in power conversion designs.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.7350 | $37.35 |
| 100+ | $2.6694 | $266.94 |
| 500+ | $2.3906 | $1195.31 |
| 1000+ | $2.0689 | $2068.91 |
| 2000+ | $1.9531 | $3906.26 |
| 4000+ | $1.9290 | $7716.04 |
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