STB57N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

STB57N65M5 is an N-Channel power MOSFET rated at 650V and 42A with an ultra-low 0.063Ω on-resistance in a D2PAK (TO-263) surface-mount package. Features 960mJ avalanche energy rating and built-in diode for robust inductive switching performance. Available from STMicroelectronics with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB57N65M5Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $5.0419(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low 0.063Ω drain-source on-resistance at 42A enabling highly efficient power conversion with minimal conduction losses
  • 960mJ avalanche energy rating providing exceptional robustness in inductive load switching and unclamped inductive switching events
  • D2PAK (TO-263) surface-mount package with drain-connected tab for excellent thermal dissipation on standard PCB copper pours

Applications

The STB57N65M5 is designed for high-current power switching applications including server power supplies, solar inverters, and industrial motor drives operating from high-voltage DC buses up to 650V. Its extremely low on-resistance minimizes power dissipation at 42A continuous drain current, improving overall system efficiency in demanding power conversion stages. The D2PAK surface-mount package with a drain-tab thermal path enables effective heat sinking directly through the PCB without mechanical mounting hardware.

Specifications

Factory Lead Time14Weeks
YTEOL5
Avalanche Energy Rating (Eas)960mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)42A
Drain-source On Resistance-Max0.063Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)168A
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB57N65M5 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the voltage, current, and on-resistance ratings of the STB57N65M5?

The STB57N65M5 is rated for a minimum drain-source breakdown voltage of 650V and a maximum continuous drain current of 42A. Its maximum drain-source on-resistance is just 0.063Ω, which significantly reduces conduction losses at high current levels. The device also features a 960mJ avalanche energy rating for operation with inductive loads.

What package does the STB57N65M5 use and how does it manage heat?

The STB57N65M5 uses the D2PAK (TO-263AB) surface-mount package with the case connected directly to the drain. This allows the large exposed tab to conduct heat directly into the PCB copper plane, providing effective thermal management without requiring a separate heatsink or mechanical mounting hardware, simplifying board assembly in high-power applications.

Does the STB57N65M5 include a body diode and what is its avalanche rating?

Yes, the STB57N65M5 is configured as a single device with a built-in anti-parallel freewheeling diode, eliminating the need for an external Schottky or rectifier diode in switching power stages. The device is rated for 960mJ of avalanche energy (Eas), providing a high margin of safety during unclamped inductive switching events typical of motor control and power supply applications.

What applications are best suited for the STB57N65M5?

The STB57N65M5 is optimized for high-efficiency power conversion applications such as three-phase inverters, server and telecom power supplies, solar microinverters, and industrial variable frequency drives. Its 650V rating covers rectified European and universal AC mains voltages, while the ultra-low 0.063Ω on-resistance minimizes switching losses in full-bridge and half-bridge topologies operating at high duty cycles.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $5.0419
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$11.7500$11.75
10+$7.9774$79.77
100+$6.2593$625.93
1000+$5.1356$5135.60
4000+$5.1353$20541.24
8000+$5.0419$40335.52
pcs
Unit price: $11.7500 · Total: $11.75

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy