STB45NF06T4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB45NF06T4 is a high-current N-channel STripFET Power MOSFET from STMicroelectronics with 60V breakdown voltage, 38A continuous drain current, and an exceptionally low 0.028-ohm maximum on-resistance in a 3-pin D2PAK package. It integrates a built-in body diode for simplified synchronous rectification and half-bridge topologies. Available from STMicroelectronics authorized distributors with in-stock inventory and worldwide shipping for power electronics designs.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STB45NF06T4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5640(MOQ 100)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low 0.028-ohm maximum on-resistance at 38A for minimal conduction losses in high-current power conversion stages
- 38A continuous drain current capability with 135mJ avalanche energy rating for robust performance in demanding motor drive and power supply applications
- STripFET technology in compact 3-pin D2PAK package delivers excellent thermal dissipation for high power density designs
- Built-in body diode enables simplified synchronous rectification and freewheeling current paths without external diodes
Applications
The STB45NF06T4 is designed for high-current DC motor drives, synchronous buck converters, and battery management systems operating in 12V to 48V power architectures. Its 38A rating and ultra-low 0.028-ohm on-resistance make it ideal for automotive body electronics, power tool motor controllers, and industrial relay replacement circuits. The D2PAK package with exposed drain pad enables effective thermal coupling to PCB copper planes, supporting high power density in server power supplies and solar panel charge controllers.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 135mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 38A |
| Drain-source On Resistance-Max | 0.028Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 80W |
| Pulsed Drain Current-Max (IDM) | 152A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB45NF06T4?
The STB45NF06T4 is rated for a minimum drain-source breakdown voltage of 60V and a maximum continuous drain current of 38A. Its maximum drain-source on-resistance is 0.028 ohms, which is among the lowest available in 60V N-channel MOSFETs. The avalanche energy rating of 135mJ provides additional robustness for inductive switching applications.
What package is used for the STB45NF06T4, and what are the thermal benefits?
The STB45NF06T4 uses a 3-pin D2PAK (TO-263) surface-mount package with the drain pad exposed on the bottom for direct PCB thermal coupling. This package can dissipate significant power through the PCB copper ground plane or a mounted heatsink, allowing the 38A drain current to be sustained without exceeding junction temperature limits in most practical operating conditions.
What is STripFET technology, and how does it benefit the STB45NF06T4?
STripFET is STMicroelectronics' advanced MOSFET fabrication process that achieves very low specific on-resistance by using a cellular stripe structure. In the STB45NF06T4, this results in a 0.028-ohm maximum on-resistance while supporting 38A of drain current, significantly reducing conduction power losses compared to standard planar MOSFETs at the same voltage rating.
What applications are best suited for the STB45NF06T4?
The STB45NF06T4 is ideal for DC motor drives in power tools and automotive systems, synchronous buck converters in 12V and 48V power supplies, battery charger circuits, and solar charge controller switches. Its 38A continuous rating and 60V breakdown voltage also suit industrial solenoid drivers, H-bridge motor controllers, and high-side or low-side power switches in battery management systems.
Is the STB45NF06T4 still in production, and what is its compliance status?
The STB45NF06T4 has a YTEOL value of 0, which indicates the device may be approaching end-of-life. Buyers should verify current availability with authorized STMicroelectronics distributors before designing it into new products. The device carries a JESD-609 e3 rating indicating it is halogen-free and RoHS compliant, suitable for applications requiring environmental compliance certifications.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $1.2100 | $121.00 |
| 500+ | $1.1500 | $575.00 |
| 1000+ | $1.0900 | $1090.00 |
| 2000+ | $0.6208 | $1241.62 |
| 6000+ | $0.5912 | $3547.44 |
| 10000+ | $0.5640 | $5639.60 |
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