STD16NF06LT4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STD16NF06LT4 is a logic-level N-channel MOSFET with 60V breakdown voltage and 24A drain current in a DPAK-3 package. Features 85mΩ on-resistance, 200mJ avalanche energy rating, and built-in body diode. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE UNCONFIRMED
- Datasheet
- STD16NF06LT4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2400(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Logic-level gate drive compatibility enables direct control from 3.3V and 5V microcontrollers without level shifting
- 24A continuous drain current with only 85mΩ maximum Rds(on) for low conduction loss in power switching applications
- 200mJ avalanche energy rating with built-in body diode for robust protection against inductive load transients
Applications
The STD16NF06LT4 is well suited for motor drive circuits, DC-DC converters, and load switch applications in automotive and industrial systems requiring reliable switching up to 60V. Its logic-level threshold allows direct drive from standard microcontroller GPIO pins, reducing gate driver complexity in battery management systems and power distribution units. The DPAK-3 surface-mount package with drain case connection provides efficient thermal dissipation for high-current switching designs.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 13Weeks |
| YTEOL | 5.4 |
| Additional Feature | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 24A |
| Drain-source On Resistance-Max | 0.085Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 40W |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STD16NF06LT4?
The STD16NF06LT4 is rated for a minimum 60V drain-source breakdown voltage, up to 24A maximum drain current, and a maximum Rds(on) of 85mΩ (0.085Ω), delivering low conduction losses in high-current switching applications such as motor drives and DC-DC converters.
Is the STD16NF06LT4 compatible with logic-level gate drive signals?
Yes, the STD16NF06LT4 is specifically designed with a low gate threshold voltage that is logic-level compatible, enabling direct drive from 3.3V or 5V microcontroller GPIO pins without an additional gate driver IC, simplifying circuit design and reducing component count.
What package does the STD16NF06LT4 use and what is its thermal handling capability?
The STD16NF06LT4 uses a DPAK-3 (D2PAK-equivalent surface-mount) package with the drain connected to the case for efficient heat sinking through the PCB copper pour, suitable for high-current applications requiring compact, thermally efficient surface-mount power transistors.
What is the avalanche energy rating and what protection does the built-in diode provide for the STD16NF06LT4?
The STD16NF06LT4 has an avalanche energy rating (Eas) of 200mJ, providing robust protection against inductive switching transients. The built-in body diode enables freewheeling current conduction in inductive load applications such as motor control and relay drivers, eliminating the need for an external flyback diode.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4200 | $0.42 |
| 2500+ | $0.2700 | $675.00 |
| 5000+ | $0.2650 | $1325.00 |
| 10000+ | $0.2425 | $2425.00 |
| 20000+ | $0.2412 | $4825.00 |
| 40000+ | $0.2400 | $9600.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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