STD10N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STMicroelectronics STD10N60M2 is a single N-channel MDmesh M2 power MOSFET rated at 600V and 7.5A with a typical 0.55Ω on-resistance and 110mJ avalanche energy rating, available in D2PAK, DPAK, and TO-220 packages. It integrates a built-in body diode and features an ultra-low 0.84pF feedback capacitance for high-efficiency switching in power conversion designs. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD10N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5310(MOQ 5)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD10N60M2?
- 600V N-channel MDmesh M2 power MOSFET with 7.5A drain current and 0.55Ω typical on-resistance for efficient high-voltage power switching
- Ultra-low 0.84pF maximum feedback capacitance (Crss) enabling fast switching transitions and reduced switching losses in high-frequency converters
- 110mJ avalanche energy (Eas) rating providing strong ruggedness for unclamped inductive switching applications with voltage transient protection
- Available in multiple packages: D2PAK, DPAK, and TO-220 with drain-connected tab for flexible thermal management across diverse power designs
What is STD10N60M2 used for?
The STD10N60M2 is designed for use in switched-mode power supplies, resonant converters, and PFC stages operating at mains voltage where its 600V rating, low on-resistance, and fast switching minimize power losses and improve efficiency. Its low feedback capacitance and MDmesh M2 technology make it well suited for high-frequency topologies such as LLC resonant and flyback converters in server power supplies and industrial equipment. It is also applicable in motor drives, electronic lighting ballasts, and battery charger designs requiring reliable high-voltage N-channel MOSFETs.
What are the specifications of STD10N60M2?
| Factory Lead Time | 16Weeks |
| YTEOL | 4 |
| Avalanche Energy Rating (Eas) | 110mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 7.5A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.84pF |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 85W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD10N60M2 datasheet?
STD10N60M2 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD10N60M2?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STD10N60M2?
The STD10N60M2 features a minimum 600V drain-source breakdown voltage, 7.5A maximum continuous drain current, and a typical drain-source on-resistance of 0.55Ω (maximum 0.6Ω), making it suitable for high-voltage power conversion in SMPS and PFC applications operating from mains supplies.
What is the significance of the MDmesh M2 technology in the STD10N60M2?
The MDmesh M2 technology used in the STD10N60M2 is STMicroelectronics' second-generation multi-drain mesh process, which delivers improved on-resistance versus gate charge trade-off and lower feedback capacitance (Crss of 0.84pF max), enabling faster switching and reduced switching losses in high-frequency power converter topologies.
What packages are available for the STD10N60M2 and what is the tab connection?
The STD10N60M2 is available in D2PAK, DPAK, and TO-220 packages, all featuring a drain-connected tab for direct heatsink mounting to facilitate efficient thermal management. The D2PAK variant (STD prefix) is surface-mountable, while the TO-220 is suitable for through-hole designs.
Does the STD10N60M2 have a body diode and what is its avalanche energy rating?
Yes, the STD10N60M2 includes a built-in body diode (configuration: single with built-in diode) for freewheeling in inductive load switching, and it is rated for 110mJ avalanche energy (Eas), providing robust protection against voltage spikes during unclamped inductive switching events.
What are typical applications for the STD10N60M2?
The STD10N60M2 is commonly used in switched-mode power supplies (SMPS), LLC resonant converters, flyback converters, power factor correction (PFC) circuits, electronic lighting ballasts, motor drives, and battery chargers where a 600V N-channel power MOSFET with low on-resistance and fast switching is required.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $1.2200 | $6.10 |
| 10+ | $1.0700 | $10.70 |
| 50+ | $0.9400 | $47.00 |
| 100+ | $0.7564 | $75.64 |
| 500+ | $0.5877 | $293.85 |
| 1000+ | $0.5310 | $531.00 |
In Stock · 24h Response · Worldwide Shipping
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