STD10N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STMicroelectronics STD10N60M2 is a single N-channel MDmesh M2 power MOSFET rated at 600V and 7.5A with a typical 0.55Ω on-resistance and 110mJ avalanche energy rating, available in D2PAK, DPAK, and TO-220 packages. It integrates a built-in body diode and features an ultra-low 0.84pF feedback capacitance for high-efficiency switching in power conversion designs. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STD10N60M2Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.5310(MOQ 5)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600V N-channel MDmesh M2 power MOSFET with 7.5A drain current and 0.55Ω typical on-resistance for efficient high-voltage power switching
  • Ultra-low 0.84pF maximum feedback capacitance (Crss) enabling fast switching transitions and reduced switching losses in high-frequency converters
  • 110mJ avalanche energy (Eas) rating providing strong ruggedness for unclamped inductive switching applications with voltage transient protection
  • Available in multiple packages: D2PAK, DPAK, and TO-220 with drain-connected tab for flexible thermal management across diverse power designs

Applications

The STD10N60M2 is designed for use in switched-mode power supplies, resonant converters, and PFC stages operating at mains voltage where its 600V rating, low on-resistance, and fast switching minimize power losses and improve efficiency. Its low feedback capacitance and MDmesh M2 technology make it well suited for high-frequency topologies such as LLC resonant and flyback converters in server power supplies and industrial equipment. It is also applicable in motor drives, electronic lighting ballasts, and battery charger designs requiring reliable high-voltage N-channel MOSFETs.

Specifications

Factory Lead Time16Weeks
YTEOL4
Avalanche Energy Rating (Eas)110mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)7.5A
Drain-source On Resistance-Max0.6Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)0.84pF
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)85W
Pulsed Drain Current-Max (IDM)30A
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STD10N60M2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical ratings of the STD10N60M2?

The STD10N60M2 features a minimum 600V drain-source breakdown voltage, 7.5A maximum continuous drain current, and a typical drain-source on-resistance of 0.55Ω (maximum 0.6Ω), making it suitable for high-voltage power conversion in SMPS and PFC applications operating from mains supplies.

What is the significance of the MDmesh M2 technology in the STD10N60M2?

The MDmesh M2 technology used in the STD10N60M2 is STMicroelectronics' second-generation multi-drain mesh process, which delivers improved on-resistance versus gate charge trade-off and lower feedback capacitance (Crss of 0.84pF max), enabling faster switching and reduced switching losses in high-frequency power converter topologies.

What packages are available for the STD10N60M2 and what is the tab connection?

The STD10N60M2 is available in D2PAK, DPAK, and TO-220 packages, all featuring a drain-connected tab for direct heatsink mounting to facilitate efficient thermal management. The D2PAK variant (STD prefix) is surface-mountable, while the TO-220 is suitable for through-hole designs.

Does the STD10N60M2 have a body diode and what is its avalanche energy rating?

Yes, the STD10N60M2 includes a built-in body diode (configuration: single with built-in diode) for freewheeling in inductive load switching, and it is rated for 110mJ avalanche energy (Eas), providing robust protection against voltage spikes during unclamped inductive switching events.

What are typical applications for the STD10N60M2?

The STD10N60M2 is commonly used in switched-mode power supplies (SMPS), LLC resonant converters, flyback converters, power factor correction (PFC) circuits, electronic lighting ballasts, motor drives, and battery chargers where a 600V N-channel power MOSFET with low on-resistance and fast switching is required.

Related Guides

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.5310
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
5+$1.2200$6.10
10+$1.0700$10.70
50+$0.9400$47.00
100+$0.7564$75.64
500+$0.5877$293.85
1000+$0.5310$531.00
pcs
Unit price: $1.2200 · Total: $6.10

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy