STB18N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STMicroelectronics STB18N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 13A with 255 mΩ typical on-resistance. It features 135 mJ avalanche energy rating and integrated body diode. Available in D²PAK package, in stock worldwide with competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB18N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.0600(MOQ 5)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V N-channel MDmesh M2 technology delivers ultra-low gate charge for high-frequency switching efficiency
- 13A continuous drain current with 255 mΩ typical RDS(on) minimizes conduction losses in power conversion
- 135 mJ avalanche energy rating (Eas) provides robust protection against voltage transients
- D²PAK (TO-263) surface-mount package enables excellent thermal performance on PCB without heatsink
Applications
The STB18N60M2 is designed for high-efficiency power conversion in switch-mode power supplies, PFC (Power Factor Correction) stages, and LLC resonant converters. Its 600V breakdown voltage and low on-resistance make it well-suited for AC-DC adapters, motor drives, and industrial power systems. The integrated body diode and high avalanche energy rating also support use in inductive load switching and hard-switching topologies.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 135mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 13A |
| Drain-source On Resistance-Max | 0.28Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110W |
| Pulsed Drain Current-Max (IDM) | 52A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB18N60M2?
The STB18N60M2 features a 600V drain-source breakdown voltage, 13A maximum continuous drain current, and a typical RDS(on) of 255 mΩ. It also offers a 135 mJ avalanche energy rating (Eas), making it robust against voltage transients in inductive switching applications.
What package does the STB18N60M2 come in?
The STB18N60M2 is packaged in a D²PAK (TO-263AB) surface-mount package with drain connected to the case. This large package provides excellent thermal dissipation through the PCB copper area, reducing or eliminating the need for an external heatsink in many applications.
What applications is the STB18N60M2 suitable for?
The STB18N60M2 is ideal for high-voltage power conversion applications such as switch-mode power supplies (SMPS), power factor correction (PFC) boost stages, LLC resonant converters, and motor drive circuits. Its MDmesh M2 technology is optimized for both hard and soft-switching topologies.
What is MDmesh M2 technology and why does it matter?
MDmesh M2 is STMicroelectronics' advanced vertical charge-balance (superjunction) MOSFET technology. It delivers a superior balance of low on-resistance, low gate charge, and high breakdown voltage (600V), enabling higher switching frequencies and improved efficiency compared to standard MOSFETs at equivalent voltage ratings.
Does the STB18N60M2 have an integrated body diode?
Yes, the STB18N60M2 includes a built-in body diode (freewheeling diode) between drain and source. This allows it to handle inductive flyback energy during switching transitions without requiring an external freewheeling diode, simplifying circuit design and reducing component count in bridge and half-bridge topologies.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $3.3700 | $16.85 |
| 10+ | $2.1080 | $21.08 |
| 100+ | $1.4575 | $145.75 |
| 500+ | $1.1796 | $589.78 |
| 1000+ | $1.0800 | $1080.00 |
| 2000+ | $1.0600 | $2120.00 |
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