STB10N60M2 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB10N60M2 is a high-voltage N-channel Power MOSFET from STMicroelectronics with 600V breakdown voltage, 7.5A continuous drain current, and 0.6-ohm maximum on-resistance in a D2PAK-3 surface-mount package. It features an ultra-low 0.84pF maximum feedback capacitance for excellent switching performance in offline power conversion circuits. Available from authorized distributors with in-stock inventory and worldwide shipping for power supply designs.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB10N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6783(MOQ 10)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V drain-source breakdown voltage with 7.5A continuous current rating enables direct use in offline AC-DC power conversion circuits
- Ultra-low 0.84pF maximum feedback capacitance (Crss) minimizes Miller effect for fast, low-loss switching at high frequencies
- 110mJ avalanche energy rating and built-in body diode provide rugged transient protection in inductive flyback and resonant topologies
- D2PAK-3 surface-mount package with exposed drain pad enables high power dissipation through PCB copper for compact power stages
Applications
The STB10N60M2 is designed for offline AC-DC power supplies, flyback converters, and PFC (power factor correction) boost stages operating directly from rectified mains voltage. Its 600V rating and low feedback capacitance make it effective in resonant LLC converters, active clamp forward converters, and switch-mode power supplies for industrial and consumer electronics requiring high efficiency and compact form factor. The device also suits EV charging infrastructure, solar inverters, and UPS systems where high-voltage switching with reliable avalanche capability is essential.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 110mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 7.5A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.84pF |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 85W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What voltage and current ratings does the STB10N60M2 support?
The STB10N60M2 is rated for a minimum drain-source breakdown voltage of 600V and a maximum continuous drain current of 7.5A. The maximum drain-source on-resistance is 0.6 ohms, and the avalanche energy rating is 110mJ. These specifications make it suitable for offline power conversion directly from rectified mains voltage in 100V to 230V AC systems.
Why is the low feedback capacitance of the STB10N60M2 important?
The STB10N60M2 has a maximum feedback capacitance (Crss) of 0.84pF, which is the gate-to-drain capacitance responsible for the Miller effect during switching transitions. A low Crss value reduces switching losses and gate drive requirements, enabling faster turn-on and turn-off in high-frequency converters such as LLC resonant circuits and flyback power supplies above 100kHz.
What package does the STB10N60M2 use, and how does it handle heat dissipation?
The STB10N60M2 is housed in a D2PAK-3 (TO-263) 3-pin surface-mount package with the drain connected to the exposed metal tab on the bottom. The large thermal pad allows direct heat transfer to the PCB copper area, enabling substantial power dissipation without a separate heatsink in many applications. This makes it suitable for high-power density designs on standard multi-layer FR4 boards.
What are typical applications for the STB10N60M2?
Typical applications include offline AC-DC flyback converters, PFC boost converters, LLC resonant power supplies, active clamp forward converters, and industrial SMPS operating from mains input voltages. The 600V breakdown voltage and efficient switching characteristics also make the device suitable for motor drive inverters, EV on-board chargers, solar micro-inverters, and UPS battery charge circuits requiring high reliability at elevated voltages.
What is the lead time and RoHS status of the STB10N60M2?
The STB10N60M2 has a factory lead time of approximately 14 weeks for direct procurement, but authorized STMicroelectronics distributors often maintain inventory for faster delivery. The device is available in T4 tape-and-reel packaging for automated assembly. Its RoHS compliance and YTEOL rating of 6 indicate continued product support with several years of planned availability remaining.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.6720 | $16.72 |
| 100+ | $1.1417 | $114.17 |
| 500+ | $0.9147 | $457.36 |
| 1000+ | $0.8270 | $827.00 |
| 2000+ | $0.7850 | $1570.00 |
| 4000+ | $0.6783 | $2713.08 |
In Stock · 24h Response · Worldwide Shipping
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