STB45N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB45N65M5 is an N-channel 650V MDmesh M5 Power MOSFET rated at 35A with ultra-low 78 mOhm maximum on-resistance and 810 mJ avalanche energy. It is available in D2PAK, TO-220FP, and TO-220 packages for high-power switching applications with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB45N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $3.5681(MOQ 2)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V N-channel MDmesh M5 MOSFET with ultra-low 78 mΩ maximum RDS(on) and 35A continuous drain current, delivering exceptional conduction efficiency in high-power designs
- 810 mJ single-pulse avalanche energy rating for outstanding ruggedness against inductive switching transients in motor drives and industrial inverters
- MDmesh M5 superjunction technology provides best-in-class RDS(on) × Qg figure of merit, minimizing switching losses in hard-switching and soft-switching topologies
- Available in multiple packages including D²PAK, TO-220FP, and TO-220, enabling flexible PCB layout and thermal management for diverse application requirements
Applications
The STB45N65M5 is targeted at high-power switched-mode power supplies, three-phase motor drives, solar inverters, and industrial UPS systems where 650V blocking voltage and low conduction losses are critical. Its 35A current rating and ultra-low on-resistance make it ideal for PFC boost stages, LLC resonant converters, and full-bridge inverter legs operating at medium to high switching frequencies. The high avalanche energy capability provides additional design margin in inductive switching environments, reducing the need for snubber networks.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 810mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 35A |
| Drain-source On Resistance-Max | 0.078Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 210W |
| Pulsed Drain Current-Max (IDM) | 140A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STB45N65M5:
Frequently Asked Questions
What are the key electrical ratings of the STB45N65M5?
The STB45N65M5 has a minimum drain-source breakdown voltage of 650V, maximum continuous drain current of 35A, and a maximum RDS(on) of 78 mΩ (67 mΩ typical). The avalanche energy rating is 810 mJ, ensuring robust performance in inductive switching applications.
What packages is the STB45N65M5 available in?
The STB45N65M5 is available in three packages: D²PAK (surface-mount), TO-220FP (isolated full-pack), and TO-220 (through-hole). The D²PAK is preferred for SMT designs with good heat spreading, while TO-220 variants are used in through-hole assemblies where heatsinking is required.
What MDmesh M5 technology advantages does the STB45N65M5 offer?
MDmesh M5 is STMicroelectronics' 5th-generation superjunction process that achieves significantly improved RDS(on) per unit area compared to previous generations. This results in lower conduction and switching losses, higher power density, and better thermal performance in hard-switching, resonant, and quasi-resonant power conversion topologies.
What is the avalanche energy rating of the STB45N65M5 and how does it benefit the design?
The STB45N65M5 is rated for 810 mJ single-pulse avalanche energy, one of the highest in its class. This high EAS rating provides substantial design margin against inductive voltage spikes during turn-off in motor drives and inverters, reducing the need for additional protection circuitry and improving overall system reliability.
What are typical applications and alternatives for the STB45N65M5?
Typical applications include high-power PFC converters, LLC resonant power supplies, three-phase motor drives, solar string inverters, and industrial UPS systems. Compatible alternatives include the Infineon IPW65R041CFD7 and ON Semiconductor NTP45N65S3 for similar 650V 30-45A MOSFET requirements with comparable on-resistance.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2+ | $3.6150 | $7.23 |
| 16000+ | $3.5681 | $57089.60 |
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