STB18N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STMicroelectronics STB18N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 15A continuous drain current and ultra-low 220 mΩ maximum on-resistance. It features a built-in diode and 210 mJ avalanche energy rating in a D2PAK (TO-263AB) surface-mount package. Available from stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB18N65M5Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $1.2161(MOQ 10)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650V N-channel MOSFET with ultra-low 220 mΩ maximum on-resistance using fifth-generation MDmesh M5 superjunction technology for minimal conduction losses
  • 15A maximum drain current with 210 mJ avalanche energy rating for robust unclamped inductive switching performance
  • D2PAK (TO-263AB) surface-mount package with drain connected to case for excellent thermal dissipation without separate heatsink

Applications

The STB18N65M5 is designed for high-efficiency offline switch-mode power supplies, power factor correction boost stages, and LLC resonant converters operating from 400V DC bus rails in server, telecom, and industrial power systems. Its ultra-low on-resistance MDmesh M5 technology enables reduced conduction losses and higher efficiency compared to conventional superjunction MOSFETs. The 210 mJ avalanche rating also provides additional robustness for hard-switching inverter and motor drive applications.

Specifications

Factory Lead Time14Weeks
YTEOL6.7
Avalanche Energy Rating (Eas)210mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)15A
Drain-source On Resistance-Max0.22Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)60A
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB18N65M5 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical ratings of the STB18N65M5?

The STB18N65M5 is rated for 650V minimum drain-source breakdown voltage, 15A maximum continuous drain current, and a maximum drain-source on-resistance of 220 mΩ, making it a high-performance N-channel MOSFET for efficient power conversion in SMPS, PFC, and motor drive designs.

What is the avalanche energy rating of the STB18N65M5?

The STB18N65M5 has an avalanche energy rating (Eas) of 210 mJ, which indicates its ability to safely absorb large inductive energy spikes during unclamped inductive switching events, providing substantial protection margin against voltage transients in industrial power supply and inverter circuits.

What package does the STB18N65M5 use and how is it mounted?

The STB18N65M5 uses the D2PAK (TO-263AB) 3-pin surface-mount package, where the drain is connected to the exposed case pad for direct heatsinking to the PCB copper plane, eliminating the need for an external heatsink and simplifying thermal management in high-power surface-mount designs.

How does MDmesh M5 technology benefit the STB18N65M5?

MDmesh M5 is STMicroelectronics fifth-generation superjunction MOSFET technology that achieves significantly lower on-resistance for a given die size and voltage class. This translates to reduced conduction losses, lower thermal dissipation, and higher power conversion efficiency in STB18N65M5-based SMPS, LLC converters, and bridgeless PFC circuits.

What applications are the STB18N65M5 best suited for?

The STB18N65M5 is optimized for 400V DC bus power conversion including offline flyback and LLC resonant SMPS, bridgeless totem-pole PFC stages, solar microinverters, and industrial motor drives where a 650V N-channel MOSFET with low on-resistance and high avalanche ruggedness is required for reliable long-term operation.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.2161
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$2.5500$25.50
100+$1.7828$178.28
500+$1.4615$730.73
1000+$1.4600$1460.00
2000+$1.2611$2522.30
3000+$1.2161$3648.21
pcs
Unit price: $2.5500 · Total: $25.50

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy