STB18N65M5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STMicroelectronics STB18N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 15A continuous drain current and ultra-low 220 mΩ maximum on-resistance. It features a built-in diode and 210 mJ avalanche energy rating in a D2PAK (TO-263AB) surface-mount package. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STB18N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.2161(MOQ 10)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB18N65M5?
- 650V N-channel MOSFET with ultra-low 220 mΩ maximum on-resistance using fifth-generation MDmesh M5 superjunction technology for minimal conduction losses
- 15A maximum drain current with 210 mJ avalanche energy rating for robust unclamped inductive switching performance
- D2PAK (TO-263AB) surface-mount package with drain connected to case for excellent thermal dissipation without separate heatsink
What is STB18N65M5 used for?
The STB18N65M5 is designed for high-efficiency offline switch-mode power supplies, power factor correction boost stages, and LLC resonant converters operating from 400V DC bus rails in server, telecom, and industrial power systems. Its ultra-low on-resistance MDmesh M5 technology enables reduced conduction losses and higher efficiency compared to conventional superjunction MOSFETs. The 210 mJ avalanche rating also provides additional robustness for hard-switching inverter and motor drive applications.
What are the specifications of STB18N65M5?
| Factory Lead Time | 14Weeks |
| YTEOL | 6.7 |
| Avalanche Energy Rating (Eas) | 210mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 0.22Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 60A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB18N65M5 datasheet?
STB18N65M5 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB18N65M5?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB18N65M5?
The STB18N65M5 is rated for 650V minimum drain-source breakdown voltage, 15A maximum continuous drain current, and a maximum drain-source on-resistance of 220 mΩ, making it a high-performance N-channel MOSFET for efficient power conversion in SMPS, PFC, and motor drive designs.
What is the avalanche energy rating of the STB18N65M5?
The STB18N65M5 has an avalanche energy rating (Eas) of 210 mJ, which indicates its ability to safely absorb large inductive energy spikes during unclamped inductive switching events, providing substantial protection margin against voltage transients in industrial power supply and inverter circuits.
What package does the STB18N65M5 use and how is it mounted?
The STB18N65M5 uses the D2PAK (TO-263AB) 3-pin surface-mount package, where the drain is connected to the exposed case pad for direct heatsinking to the PCB copper plane, eliminating the need for an external heatsink and simplifying thermal management in high-power surface-mount designs.
How does MDmesh M5 technology benefit the STB18N65M5?
MDmesh M5 is STMicroelectronics fifth-generation superjunction MOSFET technology that achieves significantly lower on-resistance for a given die size and voltage class. This translates to reduced conduction losses, lower thermal dissipation, and higher power conversion efficiency in STB18N65M5-based SMPS, LLC converters, and bridgeless PFC circuits.
What applications are the STB18N65M5 best suited for?
The STB18N65M5 is optimized for 400V DC bus power conversion including offline flyback and LLC resonant SMPS, bridgeless totem-pole PFC stages, solar microinverters, and industrial motor drives where a 650V N-channel MOSFET with low on-resistance and high avalanche ruggedness is required for reliable long-term operation.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $2.5500 | $25.50 |
| 100+ | $1.7828 | $178.28 |
| 500+ | $1.4615 | $730.73 |
| 1000+ | $1.4600 | $1460.00 |
| 2000+ | $1.2611 | $2522.30 |
| 3000+ | $1.2161 | $3648.21 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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