STB26NM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB26NM60N is an N-Channel power MOSFET with 600V breakdown voltage and 20A maximum drain current with 0.165Ω on-resistance. Features a built-in diode and 610mJ avalanche energy rating for robust switching performance. Available in TO-263 (D2PAK) package with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- STB26NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.7079(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB26NM60N?
- 600V drain-source breakdown voltage with 20A continuous drain current for high-power switching applications
- Ultra-low 0.165Ω drain-source on-resistance minimizes conduction losses and improves power conversion efficiency
- Integrated built-in diode and 610mJ avalanche energy rating provide robust protection in inductive switching circuits
What is STB26NM60N used for?
The STB26NM60N is ideal for switched-mode power supplies (SMPS), PFC (Power Factor Correction) stages, and motor drive circuits operating at mains voltage levels up to 600V. Its low on-resistance and high avalanche energy rating make it well-suited for hard-switching topologies such as flyback, half-bridge, and full-bridge converters. The D2PAK package enables efficient PCB heat dissipation in high-current power electronics designs.
What are the specifications of STB26NM60N?
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 610mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 20A |
| Drain-source On Resistance-Max | 0.165Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 140W |
| Pulsed Drain Current-Max (IDM) | 80A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB26NM60N datasheet?
STB26NM60N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB26NM60N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage of the STB26NM60N?
The STB26NM60N has a minimum drain-source breakdown voltage (VDS) of 600V, making it suitable for off-line power conversion applications operating from 85-265VAC mains input. This high voltage rating allows safe operation in flyback, boost PFC, and half-bridge converter topologies.
What is the on-resistance of the STB26NM60N and why does it matter?
The STB26NM60N has a maximum drain-source on-resistance (RDS(on)) of 0.165Ω. Lower on-resistance directly reduces I²R conduction losses, improving power conversion efficiency and reducing heat generation at the rated 20A drain current in SMPS and motor drive applications.
Does the STB26NM60N have built-in avalanche protection?
Yes, the STB26NM60N features an avalanche energy rating (Eas) of 610mJ and includes a built-in body diode. This high avalanche capability protects the MOSFET during inductive switching transients, where energy stored in the load inductance would otherwise cause voltage spikes exceeding the breakdown voltage.
What package does the STB26NM60N use and what are its thermal benefits?
The STB26NM60N comes in a TO-263 (D2PAK, JEDEC TO-263AB) surface-mount package. This package provides excellent thermal performance with a large exposed bottom pad that can be soldered directly to the PCB copper pour, enabling efficient heat dissipation without a separate heatsink in many applications.
Related Guides
XITCORP SSD Controllers: RISC-V Architecture and SM2/SM3/SM4 National Cryptography
How XITCORP pairs RISC-V multi-core controllers with hardware SM2/SM3/SM4 national cryptography, AES-256, and TCG Opal 2.0 across its SATA III and PCIe NVMe SSD controller lines.
Jul 12, 2026
SM2, SM3, SM4 National Cryptography in SSDs: A Design Guide for Secure Storage
How hardware SM2/SM3/SM4 engines deliver Guomi-certified full-disk encryption in SSDs, and when to choose national cryptography over AES-256 and TCG Opal 2.0.
Jul 12, 2026
Enterprise vs Industrial SSDs: How to Choose by PLP, DWPD, and Wide-Temperature Endurance
How to pick between enterprise and industrial SSDs using power-loss protection, DWPD/TBW endurance, and -40 to +85C wide-temperature qualification as the deciding factors.
Jul 12, 2026
150141RS73100 Red LED Indicator and Current-Resistor Design Guide
Design a reliable 150141RS73100 red LED indicator with worst-case resistor sizing, GPIO checks, PWM drive, layout, and production validation.
Jul 11, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $5.6950 | $56.95 |
| 100+ | $4.1727 | $417.27 |
| 500+ | $4.0828 | $2041.38 |
| 1000+ | $1.7079 | $1707.90 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)