STB26NM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STB26NM60N is an N-Channel power MOSFET with 600V breakdown voltage and 20A maximum drain current with 0.165Ω on-resistance. Features a built-in diode and 610mJ avalanche energy rating for robust switching performance. Available in TO-263 (D2PAK) package with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- STB26NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.7079(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB26NM60N?
- 600V drain-source breakdown voltage with 20A continuous drain current for high-power switching applications
- Ultra-low 0.165Ω drain-source on-resistance minimizes conduction losses and improves power conversion efficiency
- Integrated built-in diode and 610mJ avalanche energy rating provide robust protection in inductive switching circuits
What is STB26NM60N used for?
The STB26NM60N is ideal for switched-mode power supplies (SMPS), PFC (Power Factor Correction) stages, and motor drive circuits operating at mains voltage levels up to 600V. Its low on-resistance and high avalanche energy rating make it well-suited for hard-switching topologies such as flyback, half-bridge, and full-bridge converters. The D2PAK package enables efficient PCB heat dissipation in high-current power electronics designs.
What are the specifications of STB26NM60N?
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 610mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 20A |
| Drain-source On Resistance-Max | 0.165Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 140W |
| Pulsed Drain Current-Max (IDM) | 80A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB26NM60N datasheet?
STB26NM60N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB26NM60N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage of the STB26NM60N?
The STB26NM60N has a minimum drain-source breakdown voltage (VDS) of 600V, making it suitable for off-line power conversion applications operating from 85-265VAC mains input. This high voltage rating allows safe operation in flyback, boost PFC, and half-bridge converter topologies.
What is the on-resistance of the STB26NM60N and why does it matter?
The STB26NM60N has a maximum drain-source on-resistance (RDS(on)) of 0.165Ω. Lower on-resistance directly reduces I²R conduction losses, improving power conversion efficiency and reducing heat generation at the rated 20A drain current in SMPS and motor drive applications.
Does the STB26NM60N have built-in avalanche protection?
Yes, the STB26NM60N features an avalanche energy rating (Eas) of 610mJ and includes a built-in body diode. This high avalanche capability protects the MOSFET during inductive switching transients, where energy stored in the load inductance would otherwise cause voltage spikes exceeding the breakdown voltage.
What package does the STB26NM60N use and what are its thermal benefits?
The STB26NM60N comes in a TO-263 (D2PAK, JEDEC TO-263AB) surface-mount package. This package provides excellent thermal performance with a large exposed bottom pad that can be soldered directly to the PCB copper pour, enabling efficient heat dissipation without a separate heatsink in many applications.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $5.6950 | $56.95 |
| 100+ | $4.1727 | $417.27 |
| 500+ | $4.0828 | $2041.38 |
| 1000+ | $1.7079 | $1707.90 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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