STB18NM80 STMicroelectronics MOSFET (N-Channel) (Surface Mount D2PAK (TO-263)) In Stock

STB18NM80 is an N-channel 800 V power MOSFET by STMicroelectronics with 17 A drain current and 295 mΩ maximum on-resistance in a TO-263AB D2PAK surface-mount package. Key specs: 600 mJ avalanche energy rating and built-in body diode for robust high-voltage switching. RoHS compliant, in stock with competitive pricing and worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STB18NM80Surface Mount D2PAK (TO-263)
Quick Facts
Manufacturer
STMicroelectronics
Package
Surface Mount D2PAK (TO-263)
Pin Count
4
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $1.8984(MOQ 10)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 800 V minimum drain-source breakdown voltage enabling use in offline and high-voltage AC-DC power conversion applications
  • 17 A continuous drain current with 295 mΩ maximum RDS(on) balancing current handling and switching efficiency
  • 600 mJ avalanche energy rating (EAS) providing robust protection against inductive voltage spikes and transient overvoltage
  • TO-263AB (D2PAK) RoHS-compliant surface-mount package combining high power density with automated SMT assembly compatibility

Applications

The STB18NM80 is designed for high-voltage switching applications including flyback and forward switch-mode power supplies, PFC boost converters, and offline AC-DC converters operating from mains input. Its 800 V rating provides adequate margin for rectified 230 VAC line voltages, making it a reliable choice for industrial power supplies, energy-metering equipment, and lighting drivers. The D2PAK package enables efficient PCB-level heat dissipation through copper plane spreading without the need for through-hole mounting.

Specifications

Factory Lead Time14Weeks
YTEOL6.7
Avalanche Energy Rating (Eas)600mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800V
Drain Current-Max (ID)17A
Drain-source On Resistance-Max0.295Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)190W
Pulsed Drain Current-Max (IDM)68A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageSurface Mount D2PAK (TO-263)

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STB18NM80 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the voltage and current rating of the STB18NM80?

The STB18NM80 has a minimum drain-source breakdown voltage of 800 V and a maximum continuous drain current of 17 A. These ratings make it suitable for high-voltage power conversion circuits operating from rectified mains voltages, including universal AC input (85–265 VAC) power supply topologies.

What is the RDS(on) of the STB18NM80 and what does it mean for power dissipation?

The STB18NM80 has a maximum RDS(on) of 295 mΩ (0.295 Ω). At full rated current of 17 A, this results in approximately 85 W of conduction loss, so proper thermal management and heatsinking via the TO-263AB package and PCB copper areas are important for maintaining safe junction temperatures.

What is the avalanche energy rating of the STB18NM80?

The STB18NM80 is rated for 600 mJ of avalanche energy (EAS). This substantial rating means the device can safely absorb large inductive energy transients during switch-off events, providing a significant safety margin in applications with transformer leakage inductance or inductive loads such as motors and solenoids.

What package does the STB18NM80 use and is it RoHS compliant?

The STB18NM80 is packaged in a TO-263AB (D2PAK) surface-mount case, which is the JEDEC-95 standard for high-power SMT transistors. This package offers excellent thermal performance through direct PCB contact. The device is RoHS compliant, making it suitable for use in environmentally regulated products across all major markets.

What types of power supply topologies are best suited for the STB18NM80?

The STB18NM80 is well-suited for flyback, forward, and boundary-mode PFC converter topologies where the switch must withstand high-voltage stress from rectified mains and transformer leakage spikes. Its 800 V rating, combined with the 600 mJ avalanche capability, provides a robust design margin for offline power converters operating in industrial, consumer, and lighting segments.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.8984
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$3.9170$39.17
100+$2.8068$280.68
500+$2.5401$1270.05
1000+$2.1817$2181.72
2000+$2.0753$4150.50
4000+$1.8984$7593.76
pcs
Unit price: $3.9170 · Total: $39.17

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy