STB28NM50N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB28NM50N is an STMicroelectronics N-Channel 500V Power MOSFET with 21A drain current, 0.158Ω maximum RDS(on), and integrated body diode in a TO-263AB surface-mount package. It features 430mJ avalanche energy rating for rugged operation in unclamped inductive switching circuits. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- STB28NM50N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.9300(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB28NM50N?
- 500V breakdown voltage with 21A drain current enabling high-power switching in offline and industrial converter topologies
- 0.158Ω maximum RDS(on) minimizing conduction losses for high-efficiency operation in switch-mode power supplies
- 430mJ avalanche energy rating providing robust protection against inductive switching transients in motor drive applications
- Integrated body diode in TO-263AB surface-mount package simplifying PCB layout and eliminating external freewheeling diode
What is STB28NM50N used for?
The STB28NM50N is designed for high-voltage switch-mode power supplies, motor drive inverters, and industrial DC-DC converters where 500V blocking voltage and low RDS(on) are required simultaneously. Its built-in body diode and 430mJ avalanche rating make it well suited for hard-switched topologies such as boost converters, flyback converters, and half-bridge circuits in PFC stages. The device is also used in solar inverters, UPS systems, and industrial welding equipment requiring robust N-Channel MOSFET performance at high voltages.
What are the specifications of STB28NM50N?
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 430mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 21A |
| Drain-source On Resistance-Max | 0.158Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90W |
| Pulsed Drain Current-Max (IDM) | 84A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STB28NM50N datasheet?
STB28NM50N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB28NM50N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the voltage and current rating of the STB28NM50N?
The STB28NM50N is rated for 500V drain-to-source breakdown voltage and 21A maximum drain current, making it suitable for high-power switching applications in offline power supplies and industrial motor drives.
What is the on-resistance of the STB28NM50N?
The STB28NM50N has a maximum RDS(on) of 0.158Ω, which ensures low conduction losses during normal switching operation and contributes to high efficiency in power conversion circuits.
Does the STB28NM50N include a built-in diode?
Yes, the STB28NM50N includes an integrated body diode in its single-element configuration, which acts as a freewheeling diode in inductive switching circuits, simplifying the PCB design and reducing component count.
What package does the STB28NM50N use and what is its avalanche rating?
The STB28NM50N is packaged in a TO-263AB (D2PAK) surface-mount package and is rated for 430mJ avalanche energy, providing high robustness against inductive energy spikes in unclamped switching and motor control applications.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $5.6740 | $56.74 |
| 100+ | $4.1565 | $415.65 |
| 500+ | $4.0640 | $2031.99 |
| 1000+ | $1.9300 | $1930.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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