STB23NM60ND STMicroelectronics Integrated Circuit (D2PAK) In Stock
STB23NM60ND is a 600V N-channel Power MOSFET with 19.5A drain current and 180 mOhm maximum on-resistance by STMicroelectronics. Key specs: 700 mJ avalanche energy, single configuration with built-in diode, TO-263AB package. From $1.50, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- —
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- STB23NM60ND Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $3.4125(MOQ 1000)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V N-channel Power MOSFET with 19.5A maximum drain current and 180 mΩ maximum RDS(on), delivering efficient power switching for high-voltage industrial and consumer applications
- 700 mJ avalanche energy rating providing excellent robustness against inductive switching transients, reducing the risk of device failure in motor drive and power supply designs
- Built-in body diode enables synchronous rectification and freewheeling operation without external diodes, simplifying circuit design in bridge and half-bridge topologies
- TO-263AB (D2PAK) surface-mount package with exposed thermal pad for excellent heat dissipation in space-constrained PCB assemblies
Applications
The STB23NM60ND is well-suited for switched-mode power supplies, including flyback converters and PFC boost stages operating from AC mains at 600V. It is commonly used in motor drive inverters, industrial servo drives, and UPS systems where high voltage blocking capability and low on-resistance minimize power dissipation. The 700 mJ avalanche energy rating provides additional safety margin in inductive switching applications, making the device reliable for high-reliability industrial equipment.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 700mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 19.5A |
| Drain-source On Resistance-Max | 0.18Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150W |
| Pulsed Drain Current-Max (IDM) | 78A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical specifications of the STB23NM60ND?
The STB23NM60ND features a minimum drain-source breakdown voltage of 600V, maximum continuous drain current of 19.5A, and maximum RDS(on) of 180 mΩ. Its single-pulse avalanche energy rating is 700 mJ, and it includes a built-in body diode for freewheeling operation.
What package is the STB23NM60ND available in?
The STB23NM60ND is housed in a TO-263AB (D2PAK, JEDEC-95 code TO-263AB) surface-mount package. This package provides a large exposed thermal tab soldered directly to the PCB, enabling efficient heat spreading and high power dissipation without requiring an external heatsink in many applications.
Is the STB23NM60ND RoHS compliant?
The STB23NM60ND carries JESD-609 Code 'e3', which indicates it is lead-free and RoHS compliant. This makes it suitable for use in products requiring compliance with European RoHS directives and other environmental regulations governing hazardous substances in electronics.
What is the significance of the built-in diode in the STB23NM60ND?
The built-in body diode allows the STB23NM60ND to conduct current in the reverse direction during freewheeling intervals in inductive loads, eliminating the need for an external antiparallel diode in half-bridge and full-bridge motor drive stages. This reduces component count and simplifies PCB layout.
What are typical applications and alternatives for the STB23NM60ND?
Typical applications include offline SMPS, PFC boost converters, AC motor drives, and industrial inverters operating at 600V. Compatible alternatives include the STB20NM60 and the Infineon IPB60R180P7 for similar 600V N-channel MOSFET specifications with comparable on-resistance and current ratings in surface-mount packages.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000+ | $3.4125 | $3412.50 |
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