STF23NM50N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STF23NM50N is an N-channel 500 V MDmesh II Power MOSFET with 17 A drain current and 162 mΩ typical on-resistance. It features an isolated D²PAK package with integrated body diode, delivering high-efficiency switching performance for demanding power conversion. Available in multiple package options with worldwide shipping and volume discounts.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF23NM50N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.7132(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STF23NM50N?
- 500 V breakdown voltage with 17 A drain current capability for high-power switching applications
- Low 162 mΩ typical RDS(on) minimizes conduction losses and improves overall system efficiency
- MDmesh II technology provides superior avalanche ruggedness with 254 mJ avalanche energy rating
- Isolated D²PAK package with built-in body diode simplifies circuit design and thermal management
What is STF23NM50N used for?
The STF23NM50N is well suited for switched-mode power supplies, motor drive circuits, and industrial inverter applications requiring high-voltage switching. Its 500 V rating and low on-resistance make it ideal for flyback and forward converter topologies in telecom and server power systems. The device also serves battery chargers, lighting ballasts, and renewable energy power conditioning equipment.
What are the specifications of STF23NM50N?
| Factory Lead Time | 14Weeks |
| YTEOL | 5.95 |
| Avalanche Energy Rating (Eas) | 254mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 17A |
| Drain-source On Resistance-Max | 0.19Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 68A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STF23NM50N datasheet?
STF23NM50N Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STF23NM50N?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage of the STF23NM50N?
The STF23NM50N supports a maximum drain-source breakdown voltage (BVDSS) of 500 V, making it suitable for high-voltage power conversion circuits such as offline SMPS and industrial motor drives operating from rectified mains supplies.
What package options are available for the STF23NM50N?
The STF23NM50N is available in D²PAK (surface-mount), TO-220 (through-hole), and TO-220FP (fully isolated through-hole) packages, allowing designers to choose the best thermal management and PCB layout option for their specific application.
What is the typical on-resistance of the STF23NM50N and how does it affect efficiency?
The STF23NM50N has a typical RDS(on) of 162 mΩ and a maximum of 190 mΩ at 25°C. Lower on-resistance directly reduces conduction power losses (P = I² × RDS(on)), improving converter efficiency, especially at the 17 A maximum drain current rating.
What is the avalanche energy rating of the STF23NM50N?
The STF23NM50N is rated for 254 mJ of avalanche energy (Eas), reflecting the MDmesh II technology's robust ruggedness against unclamped inductive switching events that are common in motor control and relay driver applications.
Can the STF23NM50N be used in automotive applications?
The standard STF23NM50N is an industrial-grade part. For automotive-qualified versions with AEC-Q101 compliance, consult STMicroelectronics' automotive product catalog, as specialized variants with extended qualification may be required for vehicle electronics.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8500 | $3.85 |
| 5+ | $2.5759 | $12.88 |
| 10+ | $1.8872 | $18.87 |
| 100+ | $1.7132 | $171.32 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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