STF11NM60ND STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF11NM60ND is an N-channel 600 V FDmesh II Power MOSFET from STMicroelectronics in a TO-220FP fully isolated package. It delivers 10 A continuous drain current with 370 mΩ typical RDS(on) and 200 mJ avalanche energy rating. Competitively priced and available in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STF11NM60ND Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.7400(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V drain-source breakdown voltage enables reliable operation in high-voltage AC/DC power conversion and PFC applications
- FDmesh II super-junction technology provides 370 mΩ typical RDS(on) with fast switching for improved converter efficiency
- 200 mJ avalanche energy rating (Eas) ensures robustness against inductive voltage spikes in real-world switching environments
- TO-220FP fully isolated package simplifies heatsinking with no electrical isolation pad required, reducing assembly cost and complexity
Applications
The STF11NM60ND is designed for use in offline switch-mode power supplies, auxiliary power stages, and PFC converters where 600 V capability and isolated mounting are required. Its avalanche-rated construction makes it suitable for motor drives and industrial inverters subject to inductive load transients. The TO-220FP package facilitates direct heatsink mounting without insulation washers, simplifying thermal management in space-constrained designs.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 10A |
| Drain-source On Resistance-Max | 0.45Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90W |
| Pulsed Drain Current-Max (IDM) | 40A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and breakdown voltage of the STF11NM60ND?
The STF11NM60ND supports a maximum continuous drain current (ID) of 10 A and a minimum drain-source breakdown voltage (VDSS) of 600 V, making it appropriate for high-voltage power conversion applications such as SMPS and PFC circuits.
What makes the TO-220FP package on the STF11NM60ND different from standard TO-220?
The TO-220FP (Fully Protected) package features an electrically isolated tab, meaning the heatsink tab is not connected to the drain. This allows the MOSFET to be mounted directly to a grounded chassis or heatsink without a separate insulation washer, simplifying assembly and improving thermal performance.
Is the STF11NM60ND avalanche-rated and why does that matter?
Yes, the STF11NM60ND carries an avalanche energy rating of 200 mJ. Avalanche capability allows the device to safely absorb energy from inductive voltage spikes without damage, which is critical for motor control, relay switching, and other inductive load applications.
What is the FDmesh II technology used in the STF11NM60ND?
FDmesh II is STMicroelectronics' advanced super-junction MOSFET technology that achieves a favorable trade-off between RDS(on) and gate charge (Qg). It enables lower switching losses and conduction losses compared to conventional planar MOSFETs at the same voltage rating, improving overall converter efficiency.
What are suitable replacement or alternative parts for the STF11NM60ND?
Alternative parts include STMicroelectronics' STF11NM60N (standard TO-220FP) and similar 600 V, 10 A N-channel MOSFETs from other manufacturers with RDS(on) around 0.37–0.45 Ω. Verify pin-out compatibility and gate threshold voltage when substituting across manufacturers.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.1600 | $31.60 |
| 50+ | $2.9688 | $148.44 |
| 100+ | $2.7065 | $270.65 |
| 500+ | $2.2469 | $1123.44 |
| 1000+ | $1.8100 | $1810.00 |
| 1250+ | $1.7400 | $2175.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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