STF11NM60ND STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STF11NM60ND is an N-channel 600 V FDmesh II Power MOSFET from STMicroelectronics in a TO-220FP fully isolated package. It delivers 10 A continuous drain current with 370 mΩ typical RDS(on) and 200 mJ avalanche energy rating. Competitively priced and available in stock with worldwide shipping.

OBSOLETEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STF11NM60NDTransistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
OBSOLETE
Category
MOSFET (N-Channel)
Price
From $1.7400(MOQ 10)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600 V drain-source breakdown voltage enables reliable operation in high-voltage AC/DC power conversion and PFC applications
  • FDmesh II super-junction technology provides 370 mΩ typical RDS(on) with fast switching for improved converter efficiency
  • 200 mJ avalanche energy rating (Eas) ensures robustness against inductive voltage spikes in real-world switching environments
  • TO-220FP fully isolated package simplifies heatsinking with no electrical isolation pad required, reducing assembly cost and complexity

Applications

The STF11NM60ND is designed for use in offline switch-mode power supplies, auxiliary power stages, and PFC converters where 600 V capability and isolated mounting are required. Its avalanche-rated construction makes it suitable for motor drives and industrial inverters subject to inductive load transients. The TO-220FP package facilitates direct heatsink mounting without insulation washers, simplifying thermal management in space-constrained designs.

Specifications

YTEOL0
Avalanche Energy Rating (Eas)200mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)10A
Drain-source On Resistance-Max0.45Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)90W
Pulsed Drain Current-Max (IDM)40A
Qualification StatusNot Qualified
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STF11NM60ND Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the maximum drain current and breakdown voltage of the STF11NM60ND?

The STF11NM60ND supports a maximum continuous drain current (ID) of 10 A and a minimum drain-source breakdown voltage (VDSS) of 600 V, making it appropriate for high-voltage power conversion applications such as SMPS and PFC circuits.

What makes the TO-220FP package on the STF11NM60ND different from standard TO-220?

The TO-220FP (Fully Protected) package features an electrically isolated tab, meaning the heatsink tab is not connected to the drain. This allows the MOSFET to be mounted directly to a grounded chassis or heatsink without a separate insulation washer, simplifying assembly and improving thermal performance.

Is the STF11NM60ND avalanche-rated and why does that matter?

Yes, the STF11NM60ND carries an avalanche energy rating of 200 mJ. Avalanche capability allows the device to safely absorb energy from inductive voltage spikes without damage, which is critical for motor control, relay switching, and other inductive load applications.

What is the FDmesh II technology used in the STF11NM60ND?

FDmesh II is STMicroelectronics' advanced super-junction MOSFET technology that achieves a favorable trade-off between RDS(on) and gate charge (Qg). It enables lower switching losses and conduction losses compared to conventional planar MOSFETs at the same voltage rating, improving overall converter efficiency.

What are suitable replacement or alternative parts for the STF11NM60ND?

Alternative parts include STMicroelectronics' STF11NM60N (standard TO-220FP) and similar 600 V, 10 A N-channel MOSFETs from other manufacturers with RDS(on) around 0.37–0.45 Ω. Verify pin-out compatibility and gate threshold voltage when substituting across manufacturers.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.7400
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$3.1600$31.60
50+$2.9688$148.44
100+$2.7065$270.65
500+$2.2469$1123.44
1000+$1.8100$1810.00
1250+$1.7400$2175.00
pcs
Unit price: $3.1600 · Total: $31.60

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy