STF13N80K5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF13N80K5 is an N-Channel MOSFET in TO-220FP package rated at 800V and 12A with 0.45Ω on-resistance. Features isolated case, single configuration with built-in diode, and 148mJ avalanche energy rating. Available from STMicroelectronics with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF13N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.4250(MOQ 1)
- Temp Range
- -55.0°C to ?°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800V drain-source breakdown voltage with 12A continuous drain current for high-voltage power switching
- Low 0.45Ω drain-source on-resistance reducing conduction losses in power conversion applications
- Isolated TO-220FP package with built-in freewheeling diode and 148mJ avalanche energy rating for robust operation
Applications
The STF13N80K5 is well-suited for switch-mode power supplies, motor drives, and high-voltage DC-DC converters where efficient power switching is critical. Its isolated TO-220FP package makes it ideal for applications requiring electrical isolation between the heatsink and circuit ground. The built-in diode and high avalanche energy rating provide additional reliability in inductive load switching scenarios.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 4 |
| Avalanche Energy Rating (Eas) | 148mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.45Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 48A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STF13N80K5?
The STF13N80K5 is rated for a maximum drain-source voltage of 800V, continuous drain current of 12A, and maximum drain-source on-resistance of 0.45Ω. It also features an avalanche energy rating of 148mJ, making it robust for inductive switching applications.
What package does the STF13N80K5 use and is the case isolated?
The STF13N80K5 uses the TO-220FP (Full Pack) package with 3 pins. The case is electrically isolated from the drain, which allows direct mounting to a heatsink without an insulating pad, simplifying thermal management in power supply designs.
What applications is the STF13N80K5 suitable for?
The STF13N80K5 is suitable for switch-mode power supplies, motor drive circuits, high-voltage DC-DC converters, and PFC (power factor correction) stages. Its 800V rating and isolated package make it especially useful in industrial and consumer power conversion equipment operating from AC mains.
Does the STF13N80K5 have a body diode or built-in freewheeling diode?
Yes, the STF13N80K5 includes a built-in anti-parallel diode as indicated by its SINGLE WITH BUILT-IN DIODE configuration. This eliminates the need for an external freewheeling diode in inductive switching circuits, reducing component count and board space.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.8500 | $2.85 |
| 5+ | $1.8525 | $9.26 |
| 20+ | $1.4250 | $28.50 |
In Stock · 24h Response · Worldwide Shipping
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