STD10NM60N STMicroelectronics MOSFET (N-Channel) (DPAK (TO-252)) In Stock
The STD10NM60N is an N-channel 600V MDmesh II Power MOSFET from STMicroelectronics, offering 10A continuous drain current, a typical on-resistance of 530mΩ, and 200mJ avalanche energy rating in a surface-mount DPAK (TO-252) package. Its MDmesh II technology delivers an excellent RDS(on) x area figure of merit for compact, efficient power designs. Available from authorized distributors worldwide with in-stock inventory and global shipping.
- Manufacturer
- STMicroelectronics
- Package
- DPAK (TO-252)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD10NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.8479(MOQ 10)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V breakdown voltage with MDmesh II superjunction technology for superior RDS(on) × area figure of merit
- 10A continuous drain current with 530mΩ typical RDS(on) for efficient switching in isolated and non-isolated topologies
- 200mJ avalanche energy rating (EAS) providing robust protection against inductive load switching transients
- DPAK (TO-252) surface-mount package enabling automated PCB assembly with good thermal dissipation
- Integrated body diode for freewheeling current handling in bridge and synchronous rectifier configurations
Applications
The STD10NM60N is ideal for offline switching power supplies, including flyback, forward, and LLC resonant converters operating from rectified mains voltage. Its 600V rating and efficient MDmesh II technology also make it well suited for power factor correction (PFC) stages, electronic ballasts, and motor drive circuits. The DPAK package enables compact, low-profile designs for adapters, chargers, and industrial power modules.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6.25 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 0.55Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 32A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | DPAK (TO-252) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STD10NM60N MOSFET?
The STD10NM60N is rated for 600V drain-source breakdown voltage (VDS), 10A continuous drain current (ID) at 25°C, and a maximum RDS(on) of 0.55Ω (typical 530mΩ). It also has an avalanche energy rating (EAS) of 200mJ, providing robust protection against voltage transients in inductive switching applications.
What package does the STD10NM60N use and how does it affect PCB design?
The STD10NM60N comes in a DPAK (TO-252) surface-mount package with JEDEC-95 code TO-252. This three-terminal package has a large exposed pad for thermal dissipation and is compatible with standard SMD assembly processes, making it suitable for high-density PCB designs in switch-mode power supplies and motor control applications.
What is MDmesh II technology and how does it benefit the STD10NM60N?
MDmesh II is STMicroelectronics' advanced superjunction MOSFET technology that achieves a significantly better RDS(on) per unit die area compared to conventional planar MOSFETs at the same voltage rating. For the STD10NM60N, this results in a 530mΩ typical on-resistance at 600V, enabling more efficient power conversion with reduced conduction losses and smaller heat sink requirements.
What applications is the STD10NM60N designed for?
The STD10NM60N is designed for high-voltage switching applications including flyback and forward switch-mode power supplies (SMPS), power factor correction (PFC) circuits, electronic ballasts, and motor drives. Its 600V rating is well matched to designs powered from 85-265VAC mains after rectification, covering universal input AC/DC converter designs.
Does the STD10NM60N have an integrated body diode and what is its avalanche capability?
Yes, the STD10NM60N includes a built-in body diode (freewheeling diode), allowing it to handle reverse current in bridge and synchronous rectifier topologies. Its avalanche energy (EAS) rating of 200mJ ensures the device can safely absorb energy from inductive load transients, improving system robustness and reliability in demanding switching environments.
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STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $2.6340 | $26.34 |
| 100+ | $0.9865 | $98.65 |
| 1000+ | $0.9395 | $939.50 |
| 10000+ | $0.8479 | $8479.00 |
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