STD7ANM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD7ANM60N is an automotive-grade N-channel power MOSFET from STMicroelectronics rated at 600V and 5A with a typical on-resistance of 800mΩ using MDmesh II technology. It features 119mJ avalanche energy rating and built-in diode in a compact DPAK package. Available from authorized distributors worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD7ANM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5693(MOQ 25)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Automotive-grade 600V N-channel MOSFET with MDmesh II technology for enhanced switching performance
- Low typical on-resistance of 800mΩ with 5A continuous drain current capability
- High avalanche energy rating of 119mJ for robust operation in inductive load switching circuits
- DPAK package with drain-tab connection enabling excellent thermal dissipation in space-constrained designs
Applications
The STD7ANM60N is designed for automotive power conversion applications including DC-DC converters, LED drivers, and electronic control units requiring reliable 600V switching. Its MDmesh II technology and built-in diode make it well suited for PFC stages, flyback converters, and motor drive circuits in harsh automotive environments. Industrial power supplies and lighting ballasts also benefit from its high avalanche energy capability and compact DPAK footprint.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6.25 |
| Additional Feature | BULK: 2500 |
| Avalanche Energy Rating (Eas) | 119mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 0.9Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 1.1pF |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 45W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STD7ANM60N?
The STD7ANM60N is rated for a minimum drain-source breakdown voltage of 600V, maximum continuous drain current of 5A, and a maximum drain-source on-resistance of 0.9Ω (typical 800mΩ). It is built using STMicroelectronics' MDmesh II technology for improved switching efficiency.
Is the STD7ANM60N suitable for automotive applications?
Yes, the STD7ANM60N is specifically designed and qualified as an automotive-grade MOSFET. It meets automotive reliability requirements and is appropriate for use in vehicle ECUs, LED lighting drivers, DC-DC converters, and other under-hood power management circuits.
What is the avalanche energy rating of the STD7ANM60N?
The STD7ANM60N has an avalanche energy rating (Eas) of 119mJ, providing strong protection against voltage spikes in inductive load switching applications such as motor drives and relay coils, enhancing system robustness and reliability.
What package does the STD7ANM60N use?
The STD7ANM60N is housed in a DPAK (TO-252) surface-mount package with the drain connected to the exposed pad for excellent heat dissipation. This package is well suited for compact automotive and industrial PCB designs requiring efficient thermal management.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 25+ | $1.3300 | $33.25 |
| 100+ | $1.0222 | $102.22 |
| 500+ | $0.8153 | $407.63 |
| 1000+ | $0.7487 | $748.72 |
| 2500+ | $0.5723 | $1430.75 |
| 40000+ | $0.5693 | $22771.60 |
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