STF34NM60ND STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STF34NM60ND is an N-channel power MOSFET rated at 600 V and 29 A with ultra-low on-resistance of 0.11 Ω in a TO-220FP isolated package. Designed for high-efficiency switching in industrial and power-conversion circuits. Available worldwide with 14-week factory lead time.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF34NM60ND Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $3.1800(MOQ 3)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STF34NM60ND?
- Ultra-low drain-source on-resistance of 0.11 Ω minimizes conduction losses in high-current switching stages
- 600 V breakdown voltage with 345 mJ avalanche energy rating ensures robust operation in demanding inductive load environments
- Isolated TO-220FP package simplifies thermal management by eliminating the need for additional insulating hardware
What is STF34NM60ND used for?
The STF34NM60ND is suited for switch-mode power supplies (SMPS), industrial motor drives, and PFC boost converters operating from rectified mains. Its 600 V rating and built-in body diode make it a reliable choice for half-bridge and full-bridge topologies. Power-factor-correction stages in server and telecom power units also benefit from its ultra-low resistance and robust avalanche capability.
What are the specifications of STF34NM60ND?
| Factory Lead Time | 14Weeks |
| YTEOL | 0 |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 345mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 29A |
| Drain-source On Resistance-Max | 0.11Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 40W |
| Pulsed Drain Current-Max (IDM) | 116A |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the STF34NM60ND datasheet?
STF34NM60ND Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STF34NM60ND?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum continuous drain current the STF34NM60ND can handle at 25°C?
The STF34NM60ND is rated for a maximum continuous drain current (ID) of 29 A at 25°C. This makes it suitable for switch-mode power supplies and motor drives requiring moderate-to-high current handling in a compact TO-220FP package.
How does the ultra-low 0.11 Ω on-resistance benefit a PFC boost converter design?
With a maximum drain-source on-resistance of 0.11 Ω, the STF34NM60ND keeps conduction losses to a minimum during the switch-on interval. In a PFC boost converter operating at 10 A, this translates to roughly 11 W of conduction loss reduction compared to devices with higher RDS(on), improving overall efficiency above 95% in many designs.
When would an isolated TO-220FP package be preferred over a standard TO-220 for the STF34NM60ND?
The isolated TO-220FP package is preferred whenever the heatsink must be electrically shared by multiple components or grounded to the chassis. Because the tab is isolated from the drain, no additional insulating washer or mica pad is needed, saving assembly time and reducing thermal resistance in industrial power supplies operating at 400 V AC mains input.
What avalanche energy capability does the STF34NM60ND offer, and why does it matter for inductive loads?
The STF34NM60ND is rated for an avalanche energy (Eas) of 345 mJ. In circuits driving inductive loads such as motors or transformers, unclamped energy can spike the drain voltage above 600 V; the 345 mJ rating ensures the device survives repetitive avalanche events without degradation, improving system reliability.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3+ | $4.1400 | $12.42 |
| 10+ | $3.7700 | $37.70 |
| 25+ | $3.1800 | $79.50 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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