STD45N10F7 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

STMicroelectronics STD45N10F7 is an N-channel power MOSFET rated at 100V and 45A with an ultra-low Rds(on) of 18mΩ and 190mJ avalanche energy capability. Designed for high-efficiency switching in power conversion and motor drive circuits. Available in DPAK (TO-252) package from stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STD45N10F7Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.6700(MOQ 5)
Temp Range
-55.0°C to ?°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low 18mΩ Rds(on) at 45A drain current minimizes conduction losses for high-efficiency DC-DC converters and motor drives
  • 100V drain-source breakdown voltage with 190mJ avalanche energy rating provides robust protection against inductive load transients
  • DPAK (TO-252) surface-mount package delivers excellent thermal performance with exposed drain pad for PCB heat spreading
  • Integrated body diode with fast reverse recovery enables synchronous rectification and freewheeling operation without external diode

Applications

The STD45N10F7 is ideal for synchronous buck DC-DC converters, motor H-bridge drivers, and power tool battery management systems requiring high current capability at 100V. Its low Rds(on) and high avalanche energy rating make it well-suited for automotive body electronics, e-bike motor controllers, and industrial power supplies. The DPAK package provides easy board-level thermal management in space-constrained designs.

Specifications

YTEOL5.85
Avalanche Energy Rating (Eas)190mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100V
Drain Current-Max (ID)45A
Drain-source On Resistance-Max0.018Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)180A
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STD45N10F7 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical ratings of the STD45N10F7?

The STD45N10F7 is rated for a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 45A, and an on-resistance (Rds(on)) of 18mΩ maximum. It also has an avalanche energy rating of 190mJ, providing robust protection against inductive voltage spikes in motor and power converter applications.

What package does the STD45N10F7 use and what are its thermal advantages?

The STD45N10F7 is housed in the DPAK (TO-252) surface-mount package, which features an exposed drain pad for direct thermal contact with the PCB copper pour or heatsink. This construction enables efficient heat dissipation at high drain currents without requiring a separate through-hole heatsink assembly.

What is the avalanche energy rating of the STD45N10F7 and why does it matter?

The STD45N10F7 has an avalanche energy (Eas) rating of 190mJ, indicating its ability to absorb inductive energy spikes when switching off inductive loads such as motors and relays. A high avalanche energy rating is critical in motor drive and power supply applications to prevent device failure from unclamped inductive switching events.

Is the STD45N10F7 suitable for synchronous rectification?

Yes, the STD45N10F7 includes an integrated body diode (configuration: single with built-in diode) that allows it to be used as a synchronous rectifier in buck and boost converters. The fast body diode recovery enables efficient freewheeling operation without the need for an external Schottky diode in many designs.

What applications is the STD45N10F7 best suited for?

The STD45N10F7 is optimized for synchronous DC-DC conversion, motor control H-bridges, e-bike drive systems, power tool battery packs, and automotive body electronics operating up to 100V. Its combination of 45A current capacity, 18mΩ on-resistance, and surface-mount DPAK packaging makes it a strong choice for high-efficiency, space-constrained power designs.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.6700
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
5+$1.8500$9.25
25+$1.7600$44.00
50+$1.6600$83.00
100+$0.9205$92.05
500+$0.7310$365.50
1000+$0.6700$670.00
pcs
Unit price: $1.8500 · Total: $9.25

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy