STD45N10F7 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STD45N10F7 is an N-channel power MOSFET rated at 100V and 45A with an ultra-low Rds(on) of 18mΩ and 190mJ avalanche energy capability. Designed for high-efficiency switching in power conversion and motor drive circuits. Available in DPAK (TO-252) package from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD45N10F7 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6700(MOQ 5)
- Temp Range
- -55.0°C to ?°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD45N10F7?
- Ultra-low 18mΩ Rds(on) at 45A drain current minimizes conduction losses for high-efficiency DC-DC converters and motor drives
- 100V drain-source breakdown voltage with 190mJ avalanche energy rating provides robust protection against inductive load transients
- DPAK (TO-252) surface-mount package delivers excellent thermal performance with exposed drain pad for PCB heat spreading
- Integrated body diode with fast reverse recovery enables synchronous rectification and freewheeling operation without external diode
What is STD45N10F7 used for?
The STD45N10F7 is ideal for synchronous buck DC-DC converters, motor H-bridge drivers, and power tool battery management systems requiring high current capability at 100V. Its low Rds(on) and high avalanche energy rating make it well-suited for automotive body electronics, e-bike motor controllers, and industrial power supplies. The DPAK package provides easy board-level thermal management in space-constrained designs.
What are the specifications of STD45N10F7?
| YTEOL | 5.85 |
| Avalanche Energy Rating (Eas) | 190mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 45A |
| Drain-source On Resistance-Max | 0.018Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 180A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD45N10F7 datasheet?
STD45N10F7 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD45N10F7?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STD45N10F7?
The STD45N10F7 is rated for a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 45A, and an on-resistance (Rds(on)) of 18mΩ maximum. It also has an avalanche energy rating of 190mJ, providing robust protection against inductive voltage spikes in motor and power converter applications.
What package does the STD45N10F7 use and what are its thermal advantages?
The STD45N10F7 is housed in the DPAK (TO-252) surface-mount package, which features an exposed drain pad for direct thermal contact with the PCB copper pour or heatsink. This construction enables efficient heat dissipation at high drain currents without requiring a separate through-hole heatsink assembly.
What is the avalanche energy rating of the STD45N10F7 and why does it matter?
The STD45N10F7 has an avalanche energy (Eas) rating of 190mJ, indicating its ability to absorb inductive energy spikes when switching off inductive loads such as motors and relays. A high avalanche energy rating is critical in motor drive and power supply applications to prevent device failure from unclamped inductive switching events.
Is the STD45N10F7 suitable for synchronous rectification?
Yes, the STD45N10F7 includes an integrated body diode (configuration: single with built-in diode) that allows it to be used as a synchronous rectifier in buck and boost converters. The fast body diode recovery enables efficient freewheeling operation without the need for an external Schottky diode in many designs.
What applications is the STD45N10F7 best suited for?
The STD45N10F7 is optimized for synchronous DC-DC conversion, motor control H-bridges, e-bike drive systems, power tool battery packs, and automotive body electronics operating up to 100V. Its combination of 45A current capacity, 18mΩ on-resistance, and surface-mount DPAK packaging makes it a strong choice for high-efficiency, space-constrained power designs.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $1.8500 | $9.25 |
| 25+ | $1.7600 | $44.00 |
| 50+ | $1.6600 | $83.00 |
| 100+ | $0.9205 | $92.05 |
| 500+ | $0.7310 | $365.50 |
| 1000+ | $0.6700 | $670.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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