STD5NK40Z-1 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STD5NK40Z-1 is an N-Channel power MOSFET with 400V breakdown voltage and 3A maximum drain current with 1.8Ω on-resistance in an IPAK-3 package. Features avalanche energy rating of 130mJ and integrated built-in diode for robust switching protection. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD5NK40Z-1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.3753(MOQ 4)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD5NK40Z-1?
- 400V drain-source breakdown voltage with 3A continuous drain current supports medium-power off-line switching applications
- Avalanche energy rated at 130mJ with integrated built-in diode provides robust protection against inductive voltage transients
- IPAK-3 surface-mount package with drain-connected case enables efficient PCB thermal management in compact power converter designs
What is STD5NK40Z-1 used for?
The STD5NK40Z-1 is suitable for switched-mode power supply auxiliary circuits, flyback converters, and low-power motor control applications operating from rectified mains voltages up to 400V. Its avalanche energy rating ensures reliability in inductive switching environments where voltage spikes from load inductance would otherwise risk device failure. The compact IPAK-3 surface-mount package with exposed drain tab enables efficient heatsinking directly through the PCB in space-constrained power electronics designs.
What are the specifications of STD5NK40Z-1?
| Factory Lead Time | 13Weeks |
| YTEOL | 5.8 |
| Additional Feature | AVALANCHE ENERGY RATED |
| Avalanche Energy Rating (Eas) | 130mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 400V |
| Drain Current-Max (ID) | 3A |
| Drain-source On Resistance-Max | 1.8Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 11.5pF |
| JEDEC-95 Code | TO-251AA |
| JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 45W |
| Pulsed Drain Current-Max (IDM) | 12A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 33.5ns |
| Turn-on Time-Max (ton) | 15.2ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD5NK40Z-1 datasheet?
STD5NK40Z-1 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD5NK40Z-1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage of the STD5NK40Z-1?
The STD5NK40Z-1 has a minimum drain-source breakdown voltage (VDS) of 400V, making it suitable for power supplies and converters operating from rectified single-phase mains up to approximately 230VAC. This 400V rating provides adequate margin for transient overvoltage conditions in off-line power conversion designs.
What is the drain current rating and on-resistance of the STD5NK40Z-1?
The STD5NK40Z-1 is rated for a maximum drain current (ID) of 3A with a maximum drain-source on-resistance (RDS(on)) of 1.8Ω. While the on-resistance is higher than lower-voltage MOSFETs, this is typical for 400V-class devices and results in acceptable conduction losses at the rated 3A current in auxiliary power supply applications.
Is the STD5NK40Z-1 avalanche energy rated?
Yes, the STD5NK40Z-1 is avalanche energy rated at 130mJ (Eas). Avalanche rating means the device can safely absorb energy from inductive voltage spikes that momentarily exceed the drain-source breakdown voltage, providing a critical safety margin in unclamped inductive switching (UIS) applications such as motor drives and flyback converters.
What package does the STD5NK40Z-1 use and how is the case connected?
The STD5NK40Z-1 comes in an IPAK-3 (also known as TO-251) surface-mount package with the case (metal tab) connected to the drain. This drain-connected case allows direct PCB copper area to serve as a heatsink, improving thermal performance without an external heatsink assembly in moderate-power applications.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 4+ | $0.4755 | $1.90 |
| 8+ | $0.4672 | $3.74 |
| 16+ | $0.4589 | $7.34 |
| 2025+ | $0.3909 | $791.57 |
| 5025+ | $0.3833 | $1926.08 |
| 10050+ | $0.3753 | $3771.77 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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