STD4N80K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STD4N80K5 is an N-channel MDmesh K5 Power MOSFET rated at 800V and 3A with a typical on-resistance of 2.1 ohms. Featuring advanced MDmesh K5 technology, it delivers superior switching efficiency and avalanche energy rating of 74.5mJ. Available in DPAK (TO-252) package, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD4N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5633(MOQ 100)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD4N80K5?
- MDmesh K5 superjunction technology providing ultra-low gate charge and reduced switching losses for high-efficiency power conversion
- High 800V drain-source breakdown voltage with 74.5mJ avalanche energy rating ensuring robust operation in demanding power applications
- DPAK (TO-252) surface-mount package with drain-connected tab enabling excellent thermal dissipation without additional isolation
What is STD4N80K5 used for?
The STD4N80K5 is designed for high-voltage power conversion applications including offline flyback converters, LLC resonant converters, and switch-mode power supplies operating from AC mains. Its low on-resistance and advanced MDmesh K5 superjunction structure make it ideal for energy-efficient adapters, industrial power supplies, and lighting control drivers. The device also finds use in motor drives and solar microinverters where high breakdown voltage and low switching losses are critical.
What are the specifications of STD4N80K5?
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 74.5mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 3A |
| Drain-source On Resistance-Max | 2.5Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60W |
| Pulsed Drain Current-Max (IDM) | 12A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD4N80K5 datasheet?
STD4N80K5 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD4N80K5?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage and drain current of the STD4N80K5?
The STD4N80K5 has a minimum drain-source breakdown voltage of 800V and a maximum continuous drain current of 3A. The maximum drain-source on-resistance is 2.5 ohms, with a typical value of 2.1 ohms, making it suitable for high-voltage, low-to-moderate current power applications.
What technology does the STD4N80K5 use and why does it matter?
The STD4N80K5 uses STMicroelectronics MDmesh K5 superjunction technology, which significantly reduces both on-resistance and gate charge compared to standard MOSFETs. This results in lower conduction and switching losses, improving the efficiency of power converters operating at higher frequencies.
What package does the STD4N80K5 come in?
The STD4N80K5 is housed in a DPAK (TO-252) surface-mount package with the case connection tied to the drain, allowing the device tab to be soldered directly to a PCB copper area for effective thermal management without an external heatsink in many applications.
What is the avalanche energy rating of the STD4N80K5?
The STD4N80K5 has an avalanche energy rating (Eas) of 74.5mJ, indicating its ability to absorb energy during unclamped inductive switching events. This robust avalanche capability improves the reliability and ruggedness of the device in real-world power supply circuits.
What are typical applications for the STD4N80K5?
Typical applications include offline flyback and LLC resonant switch-mode power supplies, industrial power converters, energy-efficient AC-DC adapters, LED lighting drivers, and solar microinverters. The 800V rating and MDmesh K5 technology make it well-suited for designs connected directly to AC mains input stages.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.9520 | $95.20 |
| 500+ | $0.7571 | $378.54 |
| 1000+ | $0.6944 | $694.37 |
| 2500+ | $0.6260 | $1565.00 |
| 5000+ | $0.5846 | $2923.05 |
| 7500+ | $0.5633 | $4224.45 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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