STD3NM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock

The STD3NM60N is an N-channel power MOSFET with 600V breakdown voltage and 3.3A drain current in a DPAK (TO-252) package. It features 1.8Ω maximum on-resistance, 86mJ avalanche energy rating, and integrated body diode for reliable switching. Available from stock worldwide with competitive pricing.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STD3NM60NOther
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.4106(MOQ 100)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600V minimum drain-source breakdown voltage enabling safe operation in high-voltage offline and industrial power conversion circuits
  • 86mJ avalanche energy rating (Eas) providing robust protection against voltage spikes and unclamped inductive switching transients
  • Compact DPAK (TO-252) package with drain-connected tab delivering efficient thermal dissipation without additional heat sinking in space-constrained designs

Applications

The STD3NM60N is suited for offline switched-mode power supplies, flyback converters, and LED driver circuits operating from rectified mains voltage up to 600V. Its 3.3A continuous drain current and low on-resistance support efficient high-voltage switching in energy meters, motor drives, and industrial control equipment. The integrated body diode simplifies snubber circuit design in bridge topologies and synchronous rectification stages.

Specifications

Factory Lead Time14Weeks
YTEOL6
Avalanche Energy Rating (Eas)86mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)3.3A
Drain-source On Resistance-Max1.8Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)13A
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STD3NM60N Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the STD3NM60N?

The STD3NM60N features a minimum drain-source breakdown voltage (BVDSS) of 600V and a maximum continuous drain current (ID) of 3.3A. The maximum drain-source on-resistance (RDS(on)) is 1.8Ω. These specifications make it suitable for high-voltage switching applications powered from rectified mains or industrial DC buses.

What is the avalanche energy rating of the STD3NM60N and why does it matter?

The STD3NM60N has an avalanche energy rating (Eas) of 86mJ. This rating quantifies how much energy the device can safely absorb during unclamped inductive switching events, where voltage spikes can exceed the rated BVDSS. A higher Eas value means greater robustness against real-world transients in motor drives, relay drivers, and power supply designs.

What package does the STD3NM60N use?

The STD3NM60N is housed in a DPAK (TO-252) surface-mount package with the case connected to the drain terminal. This package provides a large copper pad for heat dissipation to the PCB, eliminating the need for separate heat sinks in many applications and simplifying the PCB assembly process in SMPS and LED driver designs.

What are common alternatives to the STD3NM60N?

Comparable alternatives include the STF3NM60N (TO-220FP package), STB3NM60N (D2PAK), and the Infineon IPD60R1K4C6 (600V, 4A, DPAK). For lower on-resistance at similar voltage and current ratings, consider the STD4N60M2 or Vishay SiHB3N60E. Selection depends on package footprint, RDS(on) target, and gate charge requirements.

Is the STD3NM60N RoHS compliant?

Yes, the STD3NM60N is RoHS compliant as indicated in its description. STMicroelectronics manufactured this device lead-free per RoHS Directive 2011/65/EU requirements, making it suitable for consumer electronics, industrial equipment, and other products sold in regions with strict environmental regulations on hazardous substances.

Related Guides

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.4106
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
100+$0.7877$78.77
500+$0.6216$310.79
1000+$0.5681$568.11
2500+$0.4180$1045.00
5000+$0.4158$2079.00
7500+$0.4106$3079.50
pcs
Unit price: $0.7877 · Total: $78.77

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy