STD3NM60N STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD3NM60N is an N-channel power MOSFET with 600V breakdown voltage and 3.3A drain current in a DPAK (TO-252) package. It features 1.8Ω maximum on-resistance, 86mJ avalanche energy rating, and integrated body diode for reliable switching. Available from stock worldwide with competitive pricing.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD3NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4106(MOQ 100)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V minimum drain-source breakdown voltage enabling safe operation in high-voltage offline and industrial power conversion circuits
- 86mJ avalanche energy rating (Eas) providing robust protection against voltage spikes and unclamped inductive switching transients
- Compact DPAK (TO-252) package with drain-connected tab delivering efficient thermal dissipation without additional heat sinking in space-constrained designs
Applications
The STD3NM60N is suited for offline switched-mode power supplies, flyback converters, and LED driver circuits operating from rectified mains voltage up to 600V. Its 3.3A continuous drain current and low on-resistance support efficient high-voltage switching in energy meters, motor drives, and industrial control equipment. The integrated body diode simplifies snubber circuit design in bridge topologies and synchronous rectification stages.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 86mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 3.3A |
| Drain-source On Resistance-Max | 1.8Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 13A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STD3NM60N?
The STD3NM60N features a minimum drain-source breakdown voltage (BVDSS) of 600V and a maximum continuous drain current (ID) of 3.3A. The maximum drain-source on-resistance (RDS(on)) is 1.8Ω. These specifications make it suitable for high-voltage switching applications powered from rectified mains or industrial DC buses.
What is the avalanche energy rating of the STD3NM60N and why does it matter?
The STD3NM60N has an avalanche energy rating (Eas) of 86mJ. This rating quantifies how much energy the device can safely absorb during unclamped inductive switching events, where voltage spikes can exceed the rated BVDSS. A higher Eas value means greater robustness against real-world transients in motor drives, relay drivers, and power supply designs.
What package does the STD3NM60N use?
The STD3NM60N is housed in a DPAK (TO-252) surface-mount package with the case connected to the drain terminal. This package provides a large copper pad for heat dissipation to the PCB, eliminating the need for separate heat sinks in many applications and simplifying the PCB assembly process in SMPS and LED driver designs.
What are common alternatives to the STD3NM60N?
Comparable alternatives include the STF3NM60N (TO-220FP package), STB3NM60N (D2PAK), and the Infineon IPD60R1K4C6 (600V, 4A, DPAK). For lower on-resistance at similar voltage and current ratings, consider the STD4N60M2 or Vishay SiHB3N60E. Selection depends on package footprint, RDS(on) target, and gate charge requirements.
Is the STD3NM60N RoHS compliant?
Yes, the STD3NM60N is RoHS compliant as indicated in its description. STMicroelectronics manufactured this device lead-free per RoHS Directive 2011/65/EU requirements, making it suitable for consumer electronics, industrial equipment, and other products sold in regions with strict environmental regulations on hazardous substances.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.7877 | $78.77 |
| 500+ | $0.6216 | $310.79 |
| 1000+ | $0.5681 | $568.11 |
| 2500+ | $0.4180 | $1045.00 |
| 5000+ | $0.4158 | $2079.00 |
| 7500+ | $0.4106 | $3079.50 |
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