STB7NK80ZT4 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB7NK80ZT4 is an N-channel power MOSFET from STMicroelectronics rated at 800V and 5.2A in a D2PAK (TO-263AB) package. It features avalanche rating with 210 mJ energy handling, 1.8 ohm on-resistance, and a built-in diode for robust switching applications. Available worldwide with competitive pricing and fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- ACTIVE
- Datasheet
- STB7NK80ZT4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.9779(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800V drain-source breakdown voltage with 5.2A maximum drain current, enabling high-voltage power conversion and switching applications
- Avalanche rated with 210 mJ energy handling capability for robust operation in inductive load switching circuits
- Ultra-low 1.8 ohm maximum drain-source on-resistance minimizing conduction losses in high-efficiency power stages
- Built-in body diode in D2PAK (TO-263AB) surface-mount package for compact, reliable power circuit integration
Applications
The STB7NK80ZT4 is ideal for high-voltage power conversion applications including switch-mode power supplies (SMPS), flyback converters, and LLC resonant converters operating from mains voltage. Its avalanche rating and built-in diode make it well-suited for inductive load switching in motor drives, power factor correction (PFC) stages, and industrial power electronics. The D2PAK surface-mount package facilitates automated PCB assembly in high-power consumer appliances, lighting controls, and industrial inverters.
Specifications
| Factory Lead Time | 13Weeks |
| YTEOL | 6 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 210mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 5.2A |
| Drain-source On Resistance-Max | 1.8Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Pulsed Drain Current-Max (IDM) | 20.8A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STB7NK80ZT4?
The STB7NK80ZT4 is rated for 800V minimum drain-source breakdown voltage, 5.2A maximum drain current, and 1.8 ohm maximum drain-source on-resistance. It also features a 210 mJ avalanche energy rating, making it suitable for high-voltage switching applications with inductive loads where voltage spikes are common.
What does avalanche rating mean for the STB7NK80ZT4?
The STB7NK80ZT4 is avalanche rated, meaning it can safely absorb energy from voltage spikes exceeding its 800V breakdown voltage without device failure, up to 210 mJ. This is critical in inductive switching applications like motor drives and flyback converters where the inductor generates voltage transients during turn-off events.
What package does the STB7NK80ZT4 use?
The STB7NK80ZT4 uses a D2PAK (TO-263AB) surface-mount package, also identified by JEDEC-95 code TO-263AB. This large-footprint SMD package offers excellent thermal performance through its copper heatsink tab, making it suitable for high-power applications requiring efficient heat dissipation without the need for through-hole mounting.
Does the STB7NK80ZT4 have an integrated body diode?
Yes, the STB7NK80ZT4 includes a built-in body diode as part of its single MOSFET configuration. The body diode provides a freewheeling path for inductive currents during switching transitions, which is essential in H-bridge motor control, synchronous rectification, and other power converter topologies where bidirectional current flow occurs.
What are typical applications for the STB7NK80ZT4?
The STB7NK80ZT4 is designed for high-voltage power conversion applications including flyback SMPS, resonant converters, PFC boost stages, and single-phase motor drives operating from 230V AC mains. Its 800V rating with avalanche protection and 1.8 ohm on-resistance provide the headroom and efficiency needed for energy-efficient industrial power supplies and appliance motor controllers.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2358 | $1.24 |
| 10+ | $1.1112 | $11.11 |
| 100+ | $0.9881 | $98.81 |
| 3000+ | $0.9779 | $2933.70 |
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