STF25NM60ND STMicroelectronics Transistor (Transistor Outline, Vertical) In Stock
STF25NM60ND is a 600V N-channel Power MOSFET by STMicroelectronics, featuring MDmesh technology for enhanced efficiency. Key specs: 21A drain current, 0.16Ω on-resistance, 850mJ avalanche energy rating. From $2.50, in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STF25NM60ND Datasheet PDF
- Category
- Transistor
- Price
- From $2.4988(MOQ 1000)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STF25NM60ND?
- 600V breakdown voltage with 21A continuous drain current for high-power switching applications
- Ultra-low 0.16Ω RDS(on) minimizes conduction losses and improves thermal performance
- 850mJ avalanche energy rating provides robust protection against voltage transients
- Built-in body diode enables synchronous rectification and snubberless operation
What is STF25NM60ND used for?
The STF25NM60ND is ideal for switched-mode power supplies (SMPS), motor drives, and power factor correction (PFC) circuits. Its high voltage rating and low on-resistance make it suitable for industrial inverters, battery chargers, and UPS systems. The TO-220 package with isolated tab simplifies thermal management in high-power designs requiring electrical isolation.
What are the specifications of STF25NM60ND?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 850mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 21A |
| Drain-source On Resistance-Max | 0.16Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 40W |
| Pulsed Drain Current-Max (IDM) | 84A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the STF25NM60ND datasheet?
STF25NM60ND Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STF25NM60ND?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current of the STF25NM60ND?
The STF25NM60ND has a maximum continuous drain current (ID) of 21A at 25°C case temperature. The pulsed drain current rating is higher, making it suitable for applications requiring high peak currents in power conversion circuits.
What package does the STF25NM60ND use and is it thermally isolated?
The STF25NM60ND comes in a TO-220AB package with an isolated tab (Case Connection: ISOLATED). This means the metal tab is electrically isolated from the drain, simplifying heatsink mounting without requiring additional insulating hardware in many designs.
What applications is the STF25NM60ND suitable for?
The STF25NM60ND is designed for high-voltage power conversion applications including switched-mode power supplies, motor drive circuits, power factor correction, industrial inverters, and battery charger systems where 600V blocking capability and low conduction losses are required.
What is the RDS(on) of the STF25NM60ND and why does it matter?
The maximum drain-source on-resistance (RDS(on)) of the STF25NM60ND is 0.16Ω. Lower RDS(on) reduces conduction losses when the MOSFET is fully on, improving overall power supply efficiency and reducing heat generation in high-current switching applications.
What is the avalanche energy rating of the STF25NM60ND?
The STF25NM60ND has an avalanche energy rating (Eas) of 850mJ. This high avalanche energy capability ensures the device can survive unclamped inductive switching events, providing robust protection against voltage transients common in motor drive and inductive load applications.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000+ | $2.4987 | $2498.75 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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