STD80N6F6 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD80N6F6 is an N-Channel power MOSFET from STMicroelectronics featuring 80 A drain current and 120 W power dissipation in a surface-mount package. Ideal for high-efficiency switching in industrial and automotive applications. Available from authorized distributors worldwide with competitive pricing and in-stock availability.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD80N6F6 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.7900(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 80 A maximum drain current with 120 W power dissipation for high-power switching
- N-Channel MOSFET with single-element configuration for simplified circuit design
- Surface-mount package with 260°C peak reflow compatibility for modern SMT assembly
Applications
The STD80N6F6 is well-suited for motor drive circuits, DC-DC converters, and power management systems requiring high current switching. Its robust 80 A rating and 120 W dissipation capacity make it ideal for industrial equipment, power supplies, and automotive applications. The surface-mount form factor enables compact, high-density PCB designs in space-constrained environments.
Specifications
| YTEOL | 6 |
| Configuration | SINGLE |
| Drain Current-Max (ID) | 80A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 120W |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STD80N6F6:
Power Field-Effect Transistor, 40A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Frequently Asked Questions
What is the maximum drain current and power dissipation of the STD80N6F6?
The STD80N6F6 supports a maximum drain current (ID) of 80 A and a maximum power dissipation of 120 W, making it suitable for high-current switching applications in industrial and power conversion systems.
What package type does the STD80N6F6 use and is it surface-mount compatible?
The STD80N6F6 is a surface-mount device with a peak reflow temperature rating of 260°C, making it fully compatible with standard SMT assembly processes. It uses an 'Other' package classification in the STMicroelectronics lineup.
What are typical applications for the STD80N6F6 N-Channel MOSFET?
The STD80N6F6 is commonly used in motor control, switching power supplies, DC-DC converters, and load switching applications where high current handling up to 80 A and efficient power dissipation of 120 W are required.
Is the STD80N6F6 RoHS compliant?
The STD80N6F6 carries a JESD-609 Code of e3, which indicates it is manufactured with lead-free solder compatibility. Please verify the specific RoHS compliance documentation from STMicroelectronics for your regional regulatory requirements.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.0000 | $6.00 |
| 18+ | $4.0000 | $72.00 |
| 64+ | $3.7000 | $236.80 |
| 75+ | $0.8600 | $64.50 |
| 250+ | $0.8350 | $208.75 |
| 1250+ | $0.7900 | $987.50 |
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