STD100N10F7 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD100N10F7 is an N-Channel power MOSFET from STMicroelectronics with a 100 V breakdown voltage and 32 A maximum drain current. It features an ultra-low 8 mΩ on-resistance and 400 mJ avalanche energy rating in an isolated TO-220FP package. Available in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD100N10F7 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.8606(MOQ 100)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD100N10F7?
- Ultra-low drain-source on-resistance of 8 mΩ (max) minimizing conduction losses in high-current power switching applications
- High 100 V breakdown voltage with 32 A drain current capacity for robust power management designs
- Built-in freewheeling diode (single configuration) simplifying circuit design and reducing external component count
- 400 mJ avalanche energy rating providing excellent robustness against voltage spikes and inductive switching transients
- Isolated TO-220FP package enabling direct heatsink mounting without additional insulation hardware
What is STD100N10F7 used for?
The STD100N10F7 is ideal for DC-DC converters, synchronous rectification, and motor drive applications requiring high current handling with minimal switching losses. Its isolated TO-220FP package with built-in diode simplifies thermal management and PCB layout in power supply designs. The device is also well-suited for battery management systems, load switches, and LED lighting power stages operating up to 100 V.
What are the specifications of STD100N10F7?
| Reach Compliance Code | Not Compliant |
| Factory Lead Time | 26Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 400mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 32A |
| Drain-source On Resistance-Max | 0.008Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 120W |
| Pulsed Drain Current-Max (IDM) | 180A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD100N10F7 datasheet?
STD100N10F7 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD100N10F7?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current of the STD100N10F7?
The STD100N10F7 has a maximum drain current (ID) of 32 A, making it suitable for high-current power switching applications such as DC-DC converters, motor drivers, and synchronous rectifiers operating up to 100 V.
What is the on-resistance of the STD100N10F7?
The STD100N10F7 features an extremely low drain-source on-resistance (RDS(on)) maximum of 8 mΩ (0.008 Ω), which significantly reduces conduction losses and heat generation in high-frequency power conversion circuits.
What package does the STD100N10F7 use?
The STD100N10F7 comes in a TO-220FP (Full Pack) 3-pin package with an isolated case connection, allowing direct mounting to a heatsink without requiring an additional insulating pad, simplifying thermal management in power designs.
Does the STD100N10F7 have a built-in diode?
Yes, the STD100N10F7 is configured as a single device with a built-in freewheeling diode, eliminating the need for an external Schottky diode in inductive switching applications such as motor drives and synchronous buck converters.
What is the avalanche energy rating of the STD100N10F7?
The STD100N10F7 has an avalanche energy rating (Eas) of 400 mJ, providing strong robustness against inductive switching transients and voltage spikes, which is critical for reliability in motor control and power supply applications.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.9096 | $90.96 |
| 250+ | $0.8997 | $224.93 |
| 500+ | $0.8899 | $444.95 |
| 2500+ | $0.8811 | $2202.75 |
| 10000+ | $0.8765 | $8765.40 |
| 20000+ | $0.8606 | $17212.20 |
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