STD8N80K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock

STD8N80K5 is a high-voltage N-Channel MOSFET from STMicroelectronics in surface-mount DPAK (TO-252) package. Key specs include 800V drain-source breakdown voltage, 6A drain current, and 0.95Ω on-resistance with built-in diode. Available from stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STD8N80K5Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.6528(MOQ 100)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 800V high-voltage N-Channel MOSFET in compact DPAK surface-mount package for space-efficient PCB layouts
  • Single built-in diode configuration enabling simplified snubber circuit design in flyback and resonant converter topologies
  • 114mJ avalanche energy rating providing robustness against voltage transients in inductive load switching
  • Drain-connected case (TO-252) facilitating direct PCB copper thermal pad cooling without electrical isolation concerns

Applications

The STD8N80K5 is suited for auxiliary and standby power supply circuits, flyback converters, and offline LED driver stages operating from 230V AC mains rectified to high-voltage DC bus. Its 800V rating and compact DPAK footprint make it an effective choice for power meter, smart meter, and industrial power supply designs that require reliable high-voltage switching in limited board space. The integrated drain-case DPAK package simplifies thermal management through PCB copper pours.

Specifications

Factory Lead Time14Weeks
YTEOL4
Avalanche Energy Rating (Eas)114mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800V
Drain Current-Max (ID)6A
Drain-source On Resistance-Max0.95Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)110W
Pulsed Drain Current-Max (IDM)24A
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STD8N80K5 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the voltage and current rating of the STD8N80K5?

The STD8N80K5 is rated for a minimum 800V drain-source breakdown voltage and a maximum drain current of 6A, making it suitable for offline power supply auxiliary circuits and flyback converter primary switches operating from high-voltage DC bus rails derived from 230V AC mains rectification.

What is the on-resistance and avalanche energy of the STD8N80K5?

The STD8N80K5 has a maximum drain-source on-resistance of 0.95Ω and an avalanche energy rating of 114mJ. The 0.95Ω on-resistance reflects the typical tradeoff for high-voltage MOSFETs, while the 114mJ avalanche rating provides margin against voltage spikes in inductive load switching applications.

What package does the STD8N80K5 use and how is the case connected?

The STD8N80K5 is housed in the TO-252 (DPAK) surface-mount package with the case electrically connected to the drain. This allows the exposed pad to be soldered directly to a PCB copper area for thermal dissipation, though the thermal pad must be isolated from other signals since it is at drain potential.

What are typical applications for the STD8N80K5?

Typical applications include auxiliary and standby power supplies, offline flyback and forward converter primary switches, high-voltage LED driver circuits, and power metering equipment. The 800V rating paired with the surface-mount DPAK package targets compact industrial power designs where board space is limited but high-voltage isolation is required.

Does the STD8N80K5 have a built-in diode and what does it mean for the design?

Yes, the STD8N80K5 includes a built-in body diode in a single device configuration, which provides a freewheeling current path during switching transitions in inductive load circuits. This simplifies circuit design in flyback and buck converter topologies by reducing or eliminating the need for an external catch diode in certain configurations.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.6528
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
100+$1.2772$127.72
125+$0.9891$123.64
400+$0.7418$296.72
1000+$0.6528$652.80
pcs
Unit price: $1.2772 · Total: $127.72

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy