STD8N80K5 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STD8N80K5 is a high-voltage N-Channel MOSFET from STMicroelectronics in surface-mount DPAK (TO-252) package. Key specs include 800V drain-source breakdown voltage, 6A drain current, and 0.95Ω on-resistance with built-in diode. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD8N80K5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6528(MOQ 100)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800V high-voltage N-Channel MOSFET in compact DPAK surface-mount package for space-efficient PCB layouts
- Single built-in diode configuration enabling simplified snubber circuit design in flyback and resonant converter topologies
- 114mJ avalanche energy rating providing robustness against voltage transients in inductive load switching
- Drain-connected case (TO-252) facilitating direct PCB copper thermal pad cooling without electrical isolation concerns
Applications
The STD8N80K5 is suited for auxiliary and standby power supply circuits, flyback converters, and offline LED driver stages operating from 230V AC mains rectified to high-voltage DC bus. Its 800V rating and compact DPAK footprint make it an effective choice for power meter, smart meter, and industrial power supply designs that require reliable high-voltage switching in limited board space. The integrated drain-case DPAK package simplifies thermal management through PCB copper pours.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 4 |
| Avalanche Energy Rating (Eas) | 114mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.95Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 110W |
| Pulsed Drain Current-Max (IDM) | 24A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the voltage and current rating of the STD8N80K5?
The STD8N80K5 is rated for a minimum 800V drain-source breakdown voltage and a maximum drain current of 6A, making it suitable for offline power supply auxiliary circuits and flyback converter primary switches operating from high-voltage DC bus rails derived from 230V AC mains rectification.
What is the on-resistance and avalanche energy of the STD8N80K5?
The STD8N80K5 has a maximum drain-source on-resistance of 0.95Ω and an avalanche energy rating of 114mJ. The 0.95Ω on-resistance reflects the typical tradeoff for high-voltage MOSFETs, while the 114mJ avalanche rating provides margin against voltage spikes in inductive load switching applications.
What package does the STD8N80K5 use and how is the case connected?
The STD8N80K5 is housed in the TO-252 (DPAK) surface-mount package with the case electrically connected to the drain. This allows the exposed pad to be soldered directly to a PCB copper area for thermal dissipation, though the thermal pad must be isolated from other signals since it is at drain potential.
What are typical applications for the STD8N80K5?
Typical applications include auxiliary and standby power supplies, offline flyback and forward converter primary switches, high-voltage LED driver circuits, and power metering equipment. The 800V rating paired with the surface-mount DPAK package targets compact industrial power designs where board space is limited but high-voltage isolation is required.
Does the STD8N80K5 have a built-in diode and what does it mean for the design?
Yes, the STD8N80K5 includes a built-in body diode in a single device configuration, which provides a freewheeling current path during switching transitions in inductive load circuits. This simplifies circuit design in flyback and buck converter topologies by reducing or eliminating the need for an external catch diode in certain configurations.
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More from STMicroelectronics
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $1.2772 | $127.72 |
| 125+ | $0.9891 | $123.64 |
| 400+ | $0.7418 | $296.72 |
| 1000+ | $0.6528 | $652.80 |
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