STD10NM60ND STMicroelectronics MOSFET (N-Channel) (Other) In Stock

STMicroelectronics STD10NM60ND is an N-channel power MOSFET with 600V drain-source breakdown voltage, 8A maximum drain current, and 0.6Ω maximum on-resistance in a DPAK-3 TO-252 package. It features a built-in body diode and 130mJ avalanche energy rating for robust switching in high-voltage power applications. Available in stock from STMicroelectronics with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STD10NM60NDOther
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.6851(MOQ 10)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600V drain-source breakdown voltage with 8A maximum drain current enabling use in high-voltage AC/DC and DC/DC conversion stages
  • 0.6Ω maximum on-resistance minimizes conduction losses for improved efficiency in switching power supply topologies
  • 130mJ avalanche energy rating with integrated body diode provides robust protection against voltage spikes and unclamped inductive switching events

Applications

The STD10NM60ND is designed for high-voltage switching applications including flyback converters, forward converters, and LLC resonant topologies used in AC/DC power adapters and industrial power supplies. Its 600V rating and low on-resistance make it suitable for PFC (Power Factor Correction) stages, motor drives, and electronic lamp ballasts where efficient switching at mains voltage is required. The built-in body diode and avalanche capability also support use in motor inverters and inductive load switching circuits requiring reliable overvoltage clamping.

Specifications

Factory Lead Time14Weeks
YTEOL0
Avalanche Energy Rating (Eas)130mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)8A
Drain-source On Resistance-Max0.6Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)70W
Pulsed Drain Current-Max (IDM)32A
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STD10NM60ND Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for STD10NM60ND:

STD10NM60NSTMicroelectronics

Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

View Part →

Frequently Asked Questions

What is the maximum drain-source voltage of the STD10NM60ND?

The STD10NM60ND has a minimum drain-source breakdown voltage of 600V, making it suitable for offline power conversion circuits operating from 85V to 265V AC mains. This high voltage rating provides adequate margin for voltage spikes during switching transients in flyback, forward, and PFC converter topologies.

What is the on-resistance of the STD10NM60ND?

The STD10NM60ND features a maximum drain-source on-resistance (RDS(on)) of 0.6Ω, which determines conduction losses during the on-state. This relatively low on-resistance for a 600V-class MOSFET helps maintain high efficiency in switching power supplies and motor drives where minimizing I²R losses is important for thermal management.

What is the avalanche energy rating of the STD10NM60ND and why does it matter?

The STD10NM60ND is rated for 130mJ avalanche energy (Eas), which defines how much energy it can safely absorb during unclamped inductive switching events. A robust avalanche rating is critical in motor drive and power conversion applications where parasitic inductances create voltage overshoot beyond the supply rail during MOSFET turn-off, preventing catastrophic device failure.

What package does the STD10NM60ND use?

The STD10NM60ND is housed in a DPAK-3 package (JEDEC-95 code TO-252, JESD-30 code R-PSSO-G2), a surface-mount power package with an exposed metal tab for heatsinking. The TO-252 footprint is widely used in power electronics for its balance between PCB space efficiency and thermal dissipation capability, allowing direct attachment to PCB copper pours for cooling.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.6851
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$1.8630$18.63
100+$1.2841$128.41
125+$1.0380$129.75
400+$0.7785$311.40
1000+$0.6851$685.10
pcs
Unit price: $1.8630 · Total: $18.63

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy