STD10NM60ND STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics STD10NM60ND is an N-channel power MOSFET with 600V drain-source breakdown voltage, 8A maximum drain current, and 0.6Ω maximum on-resistance in a DPAK-3 TO-252 package. It features a built-in body diode and 130mJ avalanche energy rating for robust switching in high-voltage power applications. Available in stock from STMicroelectronics with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD10NM60ND Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6851(MOQ 10)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V drain-source breakdown voltage with 8A maximum drain current enabling use in high-voltage AC/DC and DC/DC conversion stages
- 0.6Ω maximum on-resistance minimizes conduction losses for improved efficiency in switching power supply topologies
- 130mJ avalanche energy rating with integrated body diode provides robust protection against voltage spikes and unclamped inductive switching events
Applications
The STD10NM60ND is designed for high-voltage switching applications including flyback converters, forward converters, and LLC resonant topologies used in AC/DC power adapters and industrial power supplies. Its 600V rating and low on-resistance make it suitable for PFC (Power Factor Correction) stages, motor drives, and electronic lamp ballasts where efficient switching at mains voltage is required. The built-in body diode and avalanche capability also support use in motor inverters and inductive load switching circuits requiring reliable overvoltage clamping.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 130mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 32A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STD10NM60ND:
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Frequently Asked Questions
What is the maximum drain-source voltage of the STD10NM60ND?
The STD10NM60ND has a minimum drain-source breakdown voltage of 600V, making it suitable for offline power conversion circuits operating from 85V to 265V AC mains. This high voltage rating provides adequate margin for voltage spikes during switching transients in flyback, forward, and PFC converter topologies.
What is the on-resistance of the STD10NM60ND?
The STD10NM60ND features a maximum drain-source on-resistance (RDS(on)) of 0.6Ω, which determines conduction losses during the on-state. This relatively low on-resistance for a 600V-class MOSFET helps maintain high efficiency in switching power supplies and motor drives where minimizing I²R losses is important for thermal management.
What is the avalanche energy rating of the STD10NM60ND and why does it matter?
The STD10NM60ND is rated for 130mJ avalanche energy (Eas), which defines how much energy it can safely absorb during unclamped inductive switching events. A robust avalanche rating is critical in motor drive and power conversion applications where parasitic inductances create voltage overshoot beyond the supply rail during MOSFET turn-off, preventing catastrophic device failure.
What package does the STD10NM60ND use?
The STD10NM60ND is housed in a DPAK-3 package (JEDEC-95 code TO-252, JESD-30 code R-PSSO-G2), a surface-mount power package with an exposed metal tab for heatsinking. The TO-252 footprint is widely used in power electronics for its balance between PCB space efficiency and thermal dissipation capability, allowing direct attachment to PCB copper pours for cooling.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.8630 | $18.63 |
| 100+ | $1.2841 | $128.41 |
| 125+ | $1.0380 | $129.75 |
| 400+ | $0.7785 | $311.40 |
| 1000+ | $0.6851 | $685.10 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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