STF22NM60N STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF22NM60N is an N-channel MDmesh II Power MOSFET from STMicroelectronics. It features 600 V breakdown voltage, 16 A drain current, and 0.20 Ω typical on-resistance in D²PAK, TO-220FP, and TO-220 packages. Available competitively priced with worldwide shipping and in-stock inventory.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF22NM60N Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.1094(MOQ 100)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V drain-source breakdown voltage with avalanche-rated ruggedness for reliable operation in high-voltage applications
- Ultra-low 0.20 Ω typical RDS(on) minimizes conduction losses and improves efficiency in power conversion circuits
- MDmesh II super-junction technology delivers superior switching speed and reduced gate charge for high-frequency designs
- Available in multiple packages (D²PAK, TO-220FP, TO-220) providing flexibility for through-hole and surface-mount layouts
Applications
The STF22NM60N is well-suited for switch-mode power supplies (SMPS), PFC stages, and motor drive applications where high voltage switching and low conduction losses are critical. Its avalanche-rated design makes it reliable in inductive load environments such as industrial inverters and UPS systems. The wide package selection supports both compact PCB layouts and high-thermal-dissipation through-hole designs.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5.95 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 300mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 16A |
| Drain-source On Resistance-Max | 0.22Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 64A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage of the STF22NM60N?
The STF22NM60N has a maximum drain-source breakdown voltage (VDSS) of 600 V, making it suitable for mains-connected power conversion applications operating from universal AC input voltages.
What packages are available for the STF22NM60N?
The STF22NM60N is available in three package options: D²PAK (surface mount), TO-220FP (fully isolated through-hole), and TO-220 (standard through-hole), giving designers flexibility for thermal management and board layout.
What is the RDS(on) of the STF22NM60N and how does it affect efficiency?
The STF22NM60N has a typical RDS(on) of 0.20 Ω and a maximum of 0.22 Ω at VGS = 10 V. Lower on-resistance reduces I²R conduction losses, improving efficiency especially at higher drain currents up to 16 A.
Is the STF22NM60N suitable for motor drive applications?
Yes, the STF22NM60N is avalanche-rated with an avalanche energy rating (Eas) of 300 mJ, which provides robustness against inductive voltage spikes commonly encountered in motor drive and solenoid switching applications.
What are common alternatives or complementary devices to the STF22NM60N?
Common alternatives in STMicroelectronics' MDmesh II family include the STF16NM60N (lower current rating) and STF36NM60N (higher current). For drop-in replacements, look for 600 V N-channel MOSFETs with 16 A continuous drain current and RDS(on) near 0.20–0.22 Ω in equivalent packages.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $1.1793 | $117.93 |
| 500+ | $1.1485 | $574.25 |
| 1000+ | $1.1094 | $1109.40 |
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