STF10N60M2 STMicroelectronics Transistor (Transistor Outline, Vertical) In Stock

The STF10N60M2 is an N-channel 600V MDmesh M2 Power MOSFET from STMicroelectronics offering 7.5A drain current and 0.55Ω typical on-resistance in a TO-220FP isolated package. It features advanced MDmesh M2 technology for superior switching performance and low gate charge. Available from stock worldwide with competitive pricing for power conversion designs.

ACTIVETransistorVerified May 2026
Package / Visual Reference
STF10N60M2Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
Transistor
Price
From $0.4591(MOQ 10)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600V breakdown voltage with 7.5A drain current suits high-voltage switching power supply designs
  • 0.55Ω typical drain-source on-resistance (0.6Ω max) minimizes conduction losses for improved efficiency
  • MDmesh M2 superjunction technology delivers low gate charge and fast switching for high-frequency converters
  • TO-220FP isolated package with 110mJ avalanche energy rating ensures robust thermal and fault tolerance

Applications

The STF10N60M2 is optimized for off-line switched-mode power supplies, PFC stages, and DC-DC converters operating at mains voltage levels up to 600V. Its low on-resistance and advanced MDmesh M2 superjunction technology make it ideal for server power supplies, LED lighting drivers, and industrial motor drives where high efficiency and compact design are required. The isolated TO-220FP package simplifies thermal management in designs with tight creepage and clearance requirements.

Specifications

Factory Lead Time14Weeks
YTEOL5
Avalanche Energy Rating (Eas)110mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)7.5A
Drain-source On Resistance-Max0.6Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)0.84pF
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)25W
Pulsed Drain Current-Max (IDM)30A
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STF10N60M2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical specifications of the STF10N60M2?

The STF10N60M2 is rated at 600V drain-source breakdown voltage, 7.5A maximum drain current, and features a typical on-resistance of 0.55Ω (0.6Ω maximum), with a feedback capacitance of 0.84pF maximum and an avalanche energy rating of 110mJ, making it suitable for demanding power switching applications.

What is MDmesh M2 technology and how does it benefit the STF10N60M2?

MDmesh M2 is STMicroelectronics' advanced superjunction MOSFET technology that achieves a superior balance between on-resistance and gate charge. This results in reduced switching losses, improved efficiency at high frequencies, and lower electromagnetic interference in power converters compared to standard planar MOSFETs.

What package does the STF10N60M2 use and is it electrically isolated?

The STF10N60M2 comes in a TO-220FP (Full Pack) package, which features an isolated tab — the drain is not connected to the mounting tab — allowing direct mounting to a heatsink without an insulating pad, simplifying assembly and improving thermal performance in power supply designs.

What are typical applications for the STF10N60M2?

This MOSFET is widely used in flyback converters, half-bridge and full-bridge topologies, power factor correction stages, LED driver power supplies, and industrial inverters where 600V blocking capability and low conduction losses are essential for high efficiency and reliability.

What is the lead time for the STF10N60M2 and are there alternatives?

The standard factory lead time for the STF10N60M2 is approximately 14 weeks. For immediate availability, check authorized distributors for stock. Compatible alternatives include other 600V N-channel MOSFETs in the MDmesh M2 family or equivalent superjunction devices with similar on-resistance and current ratings.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.4591
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
10+$1.2500$12.50
50+$0.8600$43.00
100+$0.8200$82.00
1000+$0.6040$604.00
2000+$0.4940$988.00
5000+$0.4591$2295.50
pcs
Unit price: $1.2500 · Total: $12.50

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy