STF10N60M2 STMicroelectronics Transistor (Transistor Outline, Vertical) In Stock
The STF10N60M2 is an N-channel 600V MDmesh M2 Power MOSFET from STMicroelectronics offering 7.5A drain current and 0.55Ω typical on-resistance in a TO-220FP isolated package. It features advanced MDmesh M2 technology for superior switching performance and low gate charge. Available from stock worldwide with competitive pricing for power conversion designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF10N60M2 Datasheet PDF
- Category
- Transistor
- Price
- From $0.4591(MOQ 10)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V breakdown voltage with 7.5A drain current suits high-voltage switching power supply designs
- 0.55Ω typical drain-source on-resistance (0.6Ω max) minimizes conduction losses for improved efficiency
- MDmesh M2 superjunction technology delivers low gate charge and fast switching for high-frequency converters
- TO-220FP isolated package with 110mJ avalanche energy rating ensures robust thermal and fault tolerance
Applications
The STF10N60M2 is optimized for off-line switched-mode power supplies, PFC stages, and DC-DC converters operating at mains voltage levels up to 600V. Its low on-resistance and advanced MDmesh M2 superjunction technology make it ideal for server power supplies, LED lighting drivers, and industrial motor drives where high efficiency and compact design are required. The isolated TO-220FP package simplifies thermal management in designs with tight creepage and clearance requirements.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 110mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 7.5A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.84pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical specifications of the STF10N60M2?
The STF10N60M2 is rated at 600V drain-source breakdown voltage, 7.5A maximum drain current, and features a typical on-resistance of 0.55Ω (0.6Ω maximum), with a feedback capacitance of 0.84pF maximum and an avalanche energy rating of 110mJ, making it suitable for demanding power switching applications.
What is MDmesh M2 technology and how does it benefit the STF10N60M2?
MDmesh M2 is STMicroelectronics' advanced superjunction MOSFET technology that achieves a superior balance between on-resistance and gate charge. This results in reduced switching losses, improved efficiency at high frequencies, and lower electromagnetic interference in power converters compared to standard planar MOSFETs.
What package does the STF10N60M2 use and is it electrically isolated?
The STF10N60M2 comes in a TO-220FP (Full Pack) package, which features an isolated tab — the drain is not connected to the mounting tab — allowing direct mounting to a heatsink without an insulating pad, simplifying assembly and improving thermal performance in power supply designs.
What are typical applications for the STF10N60M2?
This MOSFET is widely used in flyback converters, half-bridge and full-bridge topologies, power factor correction stages, LED driver power supplies, and industrial inverters where 600V blocking capability and low conduction losses are essential for high efficiency and reliability.
What is the lead time for the STF10N60M2 and are there alternatives?
The standard factory lead time for the STF10N60M2 is approximately 14 weeks. For immediate availability, check authorized distributors for stock. Compatible alternatives include other 600V N-channel MOSFETs in the MDmesh M2 family or equivalent superjunction devices with similar on-resistance and current ratings.
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STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.2500 | $12.50 |
| 50+ | $0.8600 | $43.00 |
| 100+ | $0.8200 | $82.00 |
| 1000+ | $0.6040 | $604.00 |
| 2000+ | $0.4940 | $988.00 |
| 5000+ | $0.4591 | $2295.50 |
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