STF12N65M5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STF12N65M5 is an N-channel 650 V MDmesh M5 Power MOSFET with 8.5 A drain current and 390 mΩ typical on-resistance. It features advanced MDmesh M5 technology for superior switching performance and low conduction losses. Available in TO-220FP and TO-220 packages with competitive pricing and worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF12N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.9741(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V breakdown voltage with 8.5 A continuous drain current suitable for high-voltage power conversion
- Low 390 mΩ typical drain-source on-resistance (RDS(on)) minimizing conduction losses
- MDmesh M5 technology delivering optimized switching performance and reduced gate charge for high-frequency designs
- Isolated case connection in TO-220FP package enabling simplified thermal management without insulating pads
Applications
The STF12N65M5 is ideally suited for switch-mode power supplies (SMPS), including flyback, forward, and LLC resonant converters operating at voltages up to 650 V. It is widely used in AC-DC adapters, motor drives, lighting ballasts, and industrial power equipment where high efficiency and compact design are required. The MDmesh M5 technology makes it particularly effective in high-frequency PFC and secondary-side synchronous rectification applications.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 150mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 8.5A |
| Drain-source On Resistance-Max | 0.43Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 34A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain-source voltage of the STF12N65M5?
The STF12N65M5 has a maximum drain-source breakdown voltage (VDSS) of 650 V, making it suitable for high-voltage power conversion applications such as offline SMPS and PFC stages operating from universal AC mains input.
What is the RDS(on) of the STF12N65M5 and why does it matter?
The STF12N65M5 has a typical RDS(on) of 390 mΩ and a maximum RDS(on) of 430 mΩ. Lower on-resistance directly reduces conduction power losses, improving efficiency in switching power supplies and reducing heat dissipation requirements.
What packages are available for the STF12N65M5?
The STF12N65M5 is available in TO-220FP (fully isolated package) and TO-220 packages. The TO-220FP variant features an isolated case connection, simplifying PCB layout and thermal management by eliminating the need for external insulating hardware.
What is the avalanche energy rating of the STF12N65M5?
The STF12N65M5 has an avalanche energy rating (EAS) of 150 mJ. This robust avalanche capability provides protection against voltage spikes and ensures reliable operation in demanding inductive switching environments.
Can the STF12N65M5 be used in PFC converter designs?
Yes, the STF12N65M5 is well-suited for Power Factor Correction (PFC) boost converter designs. Its 650 V rating comfortably handles the boosted DC bus voltage, while MDmesh M5 technology ensures low switching losses at typical PFC operating frequencies of 65–130 kHz.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5700 | $3.57 |
| 6+ | $1.1471 | $6.88 |
| 1000+ | $1.0147 | $1014.70 |
| 4000+ | $0.9843 | $3937.04 |
| 8000+ | $0.9792 | $7833.52 |
| 16000+ | $0.9741 | $15585.76 |
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