STF11N65M5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STMicroelectronics STF11N65M5 is an N-channel MDmesh M5 Power MOSFET rated at 650V and 9A with 0.48 Ohm maximum on-resistance. It features a built-in body diode and 130 mJ avalanche energy rating for rugged switching applications. Available in isolated TO-220F package with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STF11N65M5Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.6732(MOQ 1)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650V high-voltage N-channel MOSFET with only 0.48 Ω maximum RDS(on), enabling efficient hard-switching in offline power conversion circuits
  • 130 mJ single-pulse avalanche energy (Eas) rating for superior robustness against voltage transients in motor drives and switching power supplies
  • MDmesh M5 technology combining low gate charge with reduced switching losses, maximizing efficiency in resonant and quasi-resonant topologies
  • Isolated TO-220F (TO-220AB) package with insulated tab for simplified heatsinking without electrical isolation pads in compact designs

Applications

The STF11N65M5 is designed for high-voltage switched-mode power supplies, including flyback, LLC resonant, and PFC converters operating from AC mains. Its 650V rating and low switching losses make it suitable for industrial motor drives, inverters, and UPS systems requiring reliable switching at medium frequencies. The device is also used in lighting ballasts and solar micro-inverters where high efficiency and rugged avalanche performance are critical.

Specifications

Factory Lead Time14Weeks
YTEOL5
Avalanche Energy Rating (Eas)130mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650V
Drain Current-Max (ID)9A
Drain-source On Resistance-Max0.48Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)25W
Pulsed Drain Current-Max (IDM)36A
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STF11N65M5 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the voltage and current ratings of the STF11N65M5?

The STF11N65M5 is rated for a minimum drain-source breakdown voltage of 650V and a maximum continuous drain current of 9A. Its maximum RDS(on) is 0.48 Ω, making it suitable for high-voltage offline power conversion applications.

What is the avalanche energy rating of the STF11N65M5 and why does it matter?

The STF11N65M5 has a single-pulse avalanche energy (Eas) rating of 130 mJ. This high avalanche capability ensures the device can safely absorb voltage spikes caused by inductive loads, making it reliable in motor control and power supply designs without additional clamping circuitry.

What package does the STF11N65M5 use and is the tab electrically isolated?

The STF11N65M5 is housed in an isolated TO-220F (TO-220AB) package where the mounting tab is electrically isolated from the drain. This simplifies thermal management by allowing direct mounting to a heatsink without requiring additional isolation pads, reducing assembly cost and thermal resistance.

What MDmesh M5 technology features does the STF11N65M5 offer?

MDmesh M5 is STMicroelectronics' 5th-generation superjunction MOSFET technology, which achieves a significantly better RDS(on) x Qg figure of merit compared to earlier generations. This translates to lower conduction and switching losses, enabling higher efficiency in resonant, quasi-resonant, and hard-switching topologies.

What are common alternatives and typical applications for the STF11N65M5?

Typical applications include flyback SMPS, LLC converters, PFC boost stages, and industrial motor inverters. Compatible alternatives include the STF12N65M5 for slightly higher current, or Infineon's IPP60R099CS7 and ON Semiconductor's NTHL110N65S3 for comparable 650V N-channel MOSFET performance in similar packages.

Related Guides

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.6732
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$2.7200$2.72
100+$1.6000$160.00
125+$1.0200$127.50
400+$0.7650$306.00
1000+$0.6732$673.20
pcs
Unit price: $2.7200 · Total: $2.72

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy