STF11N65M5 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STF11N65M5 is an N-channel MDmesh M5 Power MOSFET rated at 650V and 9A with 0.48 Ohm maximum on-resistance. It features a built-in body diode and 130 mJ avalanche energy rating for rugged switching applications. Available in isolated TO-220F package with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF11N65M5 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6732(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650V high-voltage N-channel MOSFET with only 0.48 Ω maximum RDS(on), enabling efficient hard-switching in offline power conversion circuits
- 130 mJ single-pulse avalanche energy (Eas) rating for superior robustness against voltage transients in motor drives and switching power supplies
- MDmesh M5 technology combining low gate charge with reduced switching losses, maximizing efficiency in resonant and quasi-resonant topologies
- Isolated TO-220F (TO-220AB) package with insulated tab for simplified heatsinking without electrical isolation pads in compact designs
Applications
The STF11N65M5 is designed for high-voltage switched-mode power supplies, including flyback, LLC resonant, and PFC converters operating from AC mains. Its 650V rating and low switching losses make it suitable for industrial motor drives, inverters, and UPS systems requiring reliable switching at medium frequencies. The device is also used in lighting ballasts and solar micro-inverters where high efficiency and rugged avalanche performance are critical.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 130mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650V |
| Drain Current-Max (ID) | 9A |
| Drain-source On Resistance-Max | 0.48Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 36A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the STF11N65M5?
The STF11N65M5 is rated for a minimum drain-source breakdown voltage of 650V and a maximum continuous drain current of 9A. Its maximum RDS(on) is 0.48 Ω, making it suitable for high-voltage offline power conversion applications.
What is the avalanche energy rating of the STF11N65M5 and why does it matter?
The STF11N65M5 has a single-pulse avalanche energy (Eas) rating of 130 mJ. This high avalanche capability ensures the device can safely absorb voltage spikes caused by inductive loads, making it reliable in motor control and power supply designs without additional clamping circuitry.
What package does the STF11N65M5 use and is the tab electrically isolated?
The STF11N65M5 is housed in an isolated TO-220F (TO-220AB) package where the mounting tab is electrically isolated from the drain. This simplifies thermal management by allowing direct mounting to a heatsink without requiring additional isolation pads, reducing assembly cost and thermal resistance.
What MDmesh M5 technology features does the STF11N65M5 offer?
MDmesh M5 is STMicroelectronics' 5th-generation superjunction MOSFET technology, which achieves a significantly better RDS(on) x Qg figure of merit compared to earlier generations. This translates to lower conduction and switching losses, enabling higher efficiency in resonant, quasi-resonant, and hard-switching topologies.
What are common alternatives and typical applications for the STF11N65M5?
Typical applications include flyback SMPS, LLC converters, PFC boost stages, and industrial motor inverters. Compatible alternatives include the STF12N65M5 for slightly higher current, or Infineon's IPP60R099CS7 and ON Semiconductor's NTHL110N65S3 for comparable 650V N-channel MOSFET performance in similar packages.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7200 | $2.72 |
| 100+ | $1.6000 | $160.00 |
| 125+ | $1.0200 | $127.50 |
| 400+ | $0.7650 | $306.00 |
| 1000+ | $0.6732 | $673.20 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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