STD30PF03LT4 STMicroelectronics MOSFET (P-Channel) (Other) In Stock
STMicroelectronics STD30PF03LT4 is a P-channel STripFET power MOSFET rated 30V, 24A with ultra-low 40 milliohm on-resistance and 850mJ avalanche energy rating. Housed in a DPAK (TO-252) surface-mount package for high-efficiency load switching and motor control in automotive and industrial applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STD30PF03LT4 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.5600(MOQ 2500)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD30PF03LT4?
- 24A continuous drain current with 30V breakdown voltage and only 40 milliohm maximum Rds(on), enabling high-efficiency P-channel load switching with minimal conduction loss
- 850mJ avalanche energy rating (Eas) provides robust protection against inductive switching transients in motor drive and relay driver applications
- STripFET technology in compact DPAK (TO-252) surface-mount package with integrated body diode for simplified high-current power switching circuit design
What is STD30PF03LT4 used for?
The STD30PF03LT4 is used for high-side load switching, battery protection, and reverse polarity protection in automotive, industrial, and consumer power management circuits where a P-channel MOSFET is preferred for simple gate drive from a voltage rail. Its 24A current rating and low Rds(on) make it well-suited for motor control, solenoid drivers, and DC-DC converter synchronous rectification in 12V to 24V systems. The DPAK package provides efficient thermal dissipation through PCB copper pads, supporting high continuous current in compact power circuit designs.
What are the specifications of STD30PF03LT4?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 850mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 24A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the STD30PF03LT4 datasheet?
STD30PF03LT4 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD30PF03LT4?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the STD30PF03LT4?
The STD30PF03LT4 is rated for 30V drain-source breakdown voltage, 24A maximum continuous drain current, and a maximum Rds(on) of 40 milliohms. These specifications make it a high-efficiency choice for P-channel switching in 12V and 24V power management applications.
What is the avalanche energy rating of the STD30PF03LT4 and why does it matter?
The STD30PF03LT4 has an avalanche energy rating (Eas) of 850mJ, indicating the amount of energy it can safely absorb during unclamped inductive switching events. This high avalanche energy rating is important in motor control and inductive load switching applications where the MOSFET must survive repetitive voltage spikes above the breakdown voltage.
What does STripFET technology mean for the STD30PF03LT4?
STripFET is STMicroelectronics' proprietary vertical MOSFET cell structure that delivers very low on-resistance (Rds(on)) at low gate voltages. For the STD30PF03LT4, this translates to 40 milliohm maximum Rds(on), reducing conduction losses and heat generation compared to older trench MOSFET technologies at the same current rating.
What package does the STD30PF03LT4 use?
The STD30PF03LT4 is housed in a DPAK package (also called TO-252AA, JESD-30 code R-PSSO-G2), a 3-pin surface-mount package with an exposed metal tab that can be soldered to a PCB copper area for heat dissipation. It is RoHS compliant (JESD-609 e3) and supports automated surface-mount assembly.
What applications is the STD30PF03LT4 designed for?
The STD30PF03LT4 is designed for P-channel high-side load switches, automotive power distribution, battery protection circuits, reverse polarity protection, synchronous rectification in DC-DC converters, and motor/solenoid drivers in 12V to 30V systems. Its low Rds(on) and high current rating make it especially efficient in always-on power paths where minimizing resistive losses is critical.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2500+ | $0.5979 | $1494.85 |
| 5000+ | $0.5600 | $2800.00 |
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