STF13N60M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The STMicroelectronics STF13N60M2 is a single N-channel power MOSFET rated at 600V drain-source breakdown voltage and 11A maximum drain current with 0.38Ω on-resistance in a TO-220FP isolated package. It integrates a built-in diode and 125mJ avalanche energy rating for robust switching performance in power conversion applications. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STF13N60M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4793(MOQ 25)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600V drain-source breakdown voltage with 11A drain current rating for robust high-voltage power switching applications
- Low 0.38Ω maximum drain-source on-resistance reducing conduction losses and improving efficiency in power conversion circuits
- 125mJ avalanche energy rating (Eas) providing superior ruggedness and protection against voltage transients in unclamped inductive switching
- TO-220FP isolated package with single N-channel configuration and built-in body diode for simplified PCB layout and thermal management
Applications
The STF13N60M2 is designed for use in switched-mode power supplies, PFC (power factor correction) converters, and motor drive circuits requiring reliable high-voltage switching up to 600V. Its isolated TO-220FP package simplifies thermal management in compact power modules and industrial inverters. It is also well suited for lighting ballasts, battery chargers, and energy-efficient home appliance motor controllers.
Specifications
| Factory Lead Time | 14Weeks |
| YTEOL | 4 |
| Avalanche Energy Rating (Eas) | 125mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 11A |
| Drain-source On Resistance-Max | 0.38Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 1.1pF |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 44A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STF13N60M2?
The STF13N60M2 is rated for a minimum 600V drain-source breakdown voltage and a maximum continuous drain current (ID) of 11A, making it suitable for high-voltage power switching applications such as SMPS and PFC stages operating from mains voltage.
What is the drain-source on-resistance of the STF13N60M2?
The STF13N60M2 has a maximum drain-source on-resistance (RDS(on)) of 0.38Ω, which minimizes conduction power losses during the on-state and contributes to high efficiency in power conversion and motor drive designs.
What package does the STF13N60M2 use and is it electrically isolated?
The STF13N60M2 comes in the TO-220FP package with an isolated tab (Case Connection: ISOLATED), allowing the device to be mounted directly to a heatsink without an additional insulating pad, simplifying thermal management in power electronics assemblies.
Does the STF13N60M2 include a body diode, and what is its avalanche energy rating?
Yes, the STF13N60M2 includes a built-in body diode for freewheeling in inductive load applications, and it is rated for 125mJ avalanche energy (Eas), providing strong ruggedness against voltage spikes in unclamped inductive switching scenarios.
What are typical applications for the STF13N60M2?
The STF13N60M2 is commonly used in switched-mode power supplies (SMPS), power factor correction (PFC) converters, electronic lighting ballasts, battery chargers, and industrial motor drives where a high-voltage, efficient N-channel MOSFET in an isolated package is required.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 25+ | $0.5991 | $14.98 |
| 100+ | $0.5542 | $55.42 |
| 250+ | $0.4793 | $119.83 |
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