STF13N60M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

The STMicroelectronics STF13N60M2 is a single N-channel power MOSFET rated at 600V drain-source breakdown voltage and 11A maximum drain current with 0.38Ω on-resistance in a TO-220FP isolated package. It integrates a built-in diode and 125mJ avalanche energy rating for robust switching performance in power conversion applications. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STF13N60M2Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $0.4793(MOQ 25)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600V drain-source breakdown voltage with 11A drain current rating for robust high-voltage power switching applications
  • Low 0.38Ω maximum drain-source on-resistance reducing conduction losses and improving efficiency in power conversion circuits
  • 125mJ avalanche energy rating (Eas) providing superior ruggedness and protection against voltage transients in unclamped inductive switching
  • TO-220FP isolated package with single N-channel configuration and built-in body diode for simplified PCB layout and thermal management

Applications

The STF13N60M2 is designed for use in switched-mode power supplies, PFC (power factor correction) converters, and motor drive circuits requiring reliable high-voltage switching up to 600V. Its isolated TO-220FP package simplifies thermal management in compact power modules and industrial inverters. It is also well suited for lighting ballasts, battery chargers, and energy-efficient home appliance motor controllers.

Specifications

Factory Lead Time14Weeks
YTEOL4
Avalanche Energy Rating (Eas)125mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)11A
Drain-source On Resistance-Max0.38Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)1.1pF
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)25W
Pulsed Drain Current-Max (IDM)44A
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STF13N60M2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the STF13N60M2?

The STF13N60M2 is rated for a minimum 600V drain-source breakdown voltage and a maximum continuous drain current (ID) of 11A, making it suitable for high-voltage power switching applications such as SMPS and PFC stages operating from mains voltage.

What is the drain-source on-resistance of the STF13N60M2?

The STF13N60M2 has a maximum drain-source on-resistance (RDS(on)) of 0.38Ω, which minimizes conduction power losses during the on-state and contributes to high efficiency in power conversion and motor drive designs.

What package does the STF13N60M2 use and is it electrically isolated?

The STF13N60M2 comes in the TO-220FP package with an isolated tab (Case Connection: ISOLATED), allowing the device to be mounted directly to a heatsink without an additional insulating pad, simplifying thermal management in power electronics assemblies.

Does the STF13N60M2 include a body diode, and what is its avalanche energy rating?

Yes, the STF13N60M2 includes a built-in body diode for freewheeling in inductive load applications, and it is rated for 125mJ avalanche energy (Eas), providing strong ruggedness against voltage spikes in unclamped inductive switching scenarios.

What are typical applications for the STF13N60M2?

The STF13N60M2 is commonly used in switched-mode power supplies (SMPS), power factor correction (PFC) converters, electronic lighting ballasts, battery chargers, and industrial motor drives where a high-voltage, efficient N-channel MOSFET in an isolated package is required.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.4793
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
25+$0.5991$14.98
100+$0.5542$55.42
250+$0.4793$119.83
pcs
Unit price: $0.5991 · Total: $14.98

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy