STD3NK100Z STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STD3NK100Z is a high-voltage N-channel Power MOSFET from STMicroelectronics featuring 1000V drain-source breakdown voltage, 2.5A continuous drain current, and 6-ohm maximum on-resistance in a compact DPAK-3 surface-mount package. It integrates a built-in body diode and delivers 110mJ avalanche energy capability for robust high-voltage switching. Available from authorized distributors with in-stock inventory and worldwide shipping for high-voltage power circuit designs.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD3NK100Z Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.8061(MOQ 100)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD3NK100Z?
- 1000V drain-source breakdown voltage enables safe operation in high-voltage mains-connected circuits and industrial power topologies
- 110mJ avalanche energy rating with built-in body diode provides reliable protection against voltage transients in inductive flyback circuits
- DPAK-3 surface-mount package combines compact PCB footprint with adequate thermal dissipation for medium-power high-voltage designs
- Single-element configuration with METAL-OXIDE SEMICONDUCTOR technology ensures predictable, well-characterized switching behavior for precision power control
What is STD3NK100Z used for?
The STD3NK100Z is suited for offline high-voltage power supplies, flyback SMPS auxiliary stages, and gate drive circuits operating at voltages up to 1000V from rectified AC mains. Its 1000V breakdown voltage and 110mJ avalanche capability make it effective in industrial power metering, PLC power supply modules, and building automation controllers that must withstand transient overvoltages from inductive loads. The device also serves as a high-voltage switch in lighting ballast circuits, motor soft-starters, and precision high-voltage instrumentation power stages.
What are the specifications of STD3NK100Z?
| Factory Lead Time | 13Weeks |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 110mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1000V |
| Drain Current-Max (ID) | 2.5A |
| Drain-source On Resistance-Max | 6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90W |
| Pulsed Drain Current-Max (IDM) | 10A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD3NK100Z datasheet?
STD3NK100Z Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD3NK100Z?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STD3NK100Z?
The STD3NK100Z is rated for a 1000V minimum drain-source breakdown voltage, 2.5A maximum continuous drain current, and a 6-ohm maximum on-resistance. The 1000V rating is among the highest available for surface-mount N-channel MOSFETs, making it one of the few compact options for mains-voltage-connected switch-mode designs that require 1kV headroom.
What package does the STD3NK100Z use, and how does it compare to through-hole alternatives?
The STD3NK100Z is housed in a DPAK-3 (TO-252) surface-mount package with the drain connected to the exposed pad for PCB thermal dissipation. Compared to through-hole TO-92 or TO-220 packages used in similar 1000V applications, the DPAK-3 enables automated SMT assembly and a lower profile on the PCB while maintaining sufficient thermal performance for the device's 2.5A current rating.
What is the avalanche energy capability of the STD3NK100Z, and why does it matter?
The STD3NK100Z is rated for 110mJ of unclamped inductive switching (UIS) avalanche energy. This capability is important in flyback power supplies and inductive load switching circuits where voltage spikes can exceed the supply voltage and push the device into avalanche breakdown. The 110mJ rating allows the device to absorb these transients without damage, improving system reliability.
What applications are best suited for the STD3NK100Z?
Ideal applications include offline flyback SMPS auxiliary power stages, industrial power meter front ends, PLC power supply units, and high-voltage lighting ballast controllers operating from rectified 220V or 277V AC mains. The device also suits motor soft-start circuits, high-voltage instrumentation power rails, and protection switch circuits in industrial automation equipment where a 1000V breakdown voltage is required.
Is the STD3NK100Z RoHS compliant, and what is its availability status?
The STD3NK100Z is RoHS compliant and halogen-free per its JESD-609 e3 rating, suitable for products requiring environmental compliance certifications. The factory lead time is approximately 13 weeks for direct orders. Authorized STMicroelectronics distributors typically stock the device in DPAK-3 tape-and-reel format for immediate delivery. The YTEOL value of 6 indicates ongoing product support with several years of availability planned.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $1.4371 | $143.71 |
| 500+ | $1.2176 | $608.80 |
| 1000+ | $1.1800 | $1180.00 |
| 2500+ | $0.8440 | $2110.00 |
| 5000+ | $0.8141 | $4070.50 |
| 40000+ | $0.8061 | $32244.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)